Evaluation of Graphene Nanoribbons for Lateral Bandgap Engineered Devices
用于横向带隙工程器件的石墨烯纳米带的评估
基本信息
- 批准号:0802125
- 负责人:
- 金额:$ 30万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2008
- 资助国家:美国
- 起止时间:2008-05-01 至 2012-04-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
AbstractECCS-0802125D. Jena, University of Notre DameObjective: The objective of this research is to invstigate whether thin strips of graphene of varying widths can be used to mimic semiconductor heterostructures which form the backbone of many high-performance electronic devices. The approach is to pattern graphene into nanoscale ribbons of varying widths and to investigate the charge tranport and switching properties of such lateral bandgap-engineered devices. Using a combination of theoretical modeling and carefully designed experiments, it is proposed that the device potential of lateral bandgap engineering in graphene nanoribbons will be investigated, leading to the demonstration of the basic building blocks of complex electronic circuits such as rectifiers and switches.Intellectual Merit: The research proposed here is expected to lead to the development of methods to use graphene nanoribbons in a wide range of applications such as transistors, and long-wavelength optical emitters and photodetectors. Since carbon nanostructures are not constrained by lattice-matching requirements, they can be built on any substrates such as glass or flexible/strechable substrates. Their superior electronic properties and low-cost is expected to lead to future generations of large-area electronic, optoelectronic, and sensor technologies.Broader Impact: The project supports two undergraduate students and two graduate students. An outreach program comprises an on-site experimental demonstration of nanoscale scanning probe techniques for local high-school students with the collaboration with a high-school teacher. The dissemination of research results by publications and presentations at conferences, and its inclusion in courses taught by the investigators will ensure the outreach of the research proposed to the widest possible audience.
AbstractECCS-0802125D。耶拿,巴黎圣母院:这项研究的目的是入侵是否可以使用薄宽度的石墨烯薄片来模仿构成许多高性能电子设备的骨干的半导体异质结构。 该方法是将石墨烯绘制到不同宽度的纳米级丝带中,并研究这种侧面带隙工程设备的电荷tranport和切换特性。 Using a combination of theoretical modeling and carefully designed experiments, it is proposed that the device potential of lateral bandgap engineering in graphene nanoribbons will be investigated, leading to the demonstration of the basic building blocks of complex electronic circuits such as rectifiers and switches.Intellectual Merit: The research proposed here is expected to lead to the development of methods to use graphene nanoribbons in a wide range of applications such as晶体管以及长波长光发射器和光电探测器。 由于碳纳米结构不受晶格匹配要求的限制,因此它们可以建立在玻璃或柔性/侧面基板等基板上。 预计它们的出色电子特性和低成本将导致子孙后代的大区域电子,光电和传感器技术。Broader的影响:该项目支持两名本科生和两名研究生。 一项外展计划包括与高中老师合作的当地高中生纳米级扫描探针技术的现场实验演示。 会议上出版物和演讲对研究结果的传播及其包含在调查人员教授的课程中,将确保向最广泛的受众提出的研究的宣传。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
数据更新时间:{{ journalArticles.updateTime }}
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
Debdeep Jena其他文献
Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy
分子束外延法在 m 面 α-Al2O3 上生长、催化和面对 α-Ga2O3 和 α-(InxGa1−x)2O3
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:6.1
- 作者:
Martin S. Williams;M. Alonso;M. Schowalter;A. Karg;Sushma Raghuvansy;Jon P. McCandless;Debdeep Jena;A. Rosenauer;Martin Eickhoff;Patrick Vogt - 通讯作者:
Patrick Vogt
スパッタアニールAlN上GaN/AlN 2次元正孔ガス構造の電気特性評価と微細構造解析
溅射退火AlN上GaN/AlN二维空穴气体结构的电性能评估和微观结构分析
- DOI:
- 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
西村 海音;中西 悠太;林 侑介;藤平 哲也;Chaudhuri Reet;Cho Yongjin;Xing Huili (Grace);Debdeep Jena;上杉 謙次郎;三宅 秀人;酒井 朗 - 通讯作者:
酒井 朗
Evidence of many-body, fermi-energy edge singularity in InN films grown on GaN buffer layers
GaN 缓冲层上生长的 InN 薄膜中多体费米能边缘奇点的证据
- DOI:
- 发表时间:
2007 - 期刊:
- 影响因子:0
- 作者:
Xiaodong Mu;Yujie J. Ding;Kejia Wang;Debdeep Jena;J. Khurgin - 通讯作者:
J. Khurgin
Growth windows of epitaxial NbN x films on c -plane sapphire and their structural and superconducting properties
c面蓝宝石外延NbN x 薄膜的生长窗口及其结构和超导性能
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
J. Wright;Huili Grace;Debdeep Jena - 通讯作者:
Debdeep Jena
Tight-binding band structure of β- and α-phase Ga2O3 and Al2O3
β相和α相Ga2O3和Al2O3的紧结合能带结构
- DOI:
10.1063/5.0074598 - 发表时间:
2021 - 期刊:
- 影响因子:3.2
- 作者:
Yifan Zhang;Mengren Liu;G. Khalsa;Debdeep Jena - 通讯作者:
Debdeep Jena
Debdeep Jena的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('Debdeep Jena', 18)}}的其他基金
I-Corps: Aluminum Nitride-based Power Transistors
I-Corps:氮化铝基功率晶体管
- 批准号:
1933825 - 财政年份:2019
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
RAISE-TAQS: Integrated Room Temperature Single-Photon based Quantum-Secure LiFi Systems
RAISE-TAQS:集成室温单光子量子安全 LiFi 系统
- 批准号:
1839196 - 财政年份:2018
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Polarization-Driven Electron-Hole Bilayers in Quantum Wells
量子阱中偏振驱动的电子空穴双层
- 批准号:
1710298 - 财政年份:2017
- 资助金额:
$ 30万 - 项目类别:
Continuing Grant
EFRI NewLAW: Non-Reciprocal Wave Propagation Devices by Fermionic Emulation and Exceptional Point Physics
EFRI NewLAW:通过费米子仿真和异常点物理实现非互易波传播装置
- 批准号:
1741694 - 财政年份:2017
- 资助金额:
$ 30万 - 项目类别:
Continuing Grant
DMREF: Collaborative Research: Extreme Bandgap Semiconductors
DMREF:协作研究:极限带隙半导体
- 批准号:
1534303 - 财政年份:2015
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
- 批准号:
1523356 - 财政年份:2015
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
- 批准号:
1232191 - 财政年份:2012
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Nanoscale Optoelectronics with Polarization and Bandgap Engineered Nitride Nanowire/Silicon Heterostructures
具有偏振和带隙工程氮化物纳米线/硅异质结构的纳米级光电器件
- 批准号:
0907583 - 财政年份:2009
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
CAREER: Dielectric Engineering of Quantum Wire Solids: Fundamentals to Applications
职业:量子线固体的介电工程:应用基础
- 批准号:
0645698 - 财政年份:2007
- 资助金额:
$ 30万 - 项目类别:
Continuing Grant
相似国自然基金
石墨烯-二维半导体异质结Dirac电子的调控研究
- 批准号:12304106
- 批准年份:2023
- 资助金额:30 万元
- 项目类别:青年科学基金项目
基于褐煤的氮掺杂类石墨烯/Sn的构建与储锂机制研究
- 批准号:22308371
- 批准年份:2023
- 资助金额:30 万元
- 项目类别:青年科学基金项目
基于腔光机械效应的石墨烯光纤加速度计研究
- 批准号:62305039
- 批准年份:2023
- 资助金额:30 万元
- 项目类别:青年科学基金项目
SiC基石墨烯超表面紫外-太赫兹双波段探测器研究
- 批准号:62304187
- 批准年份:2023
- 资助金额:30 万元
- 项目类别:青年科学基金项目
有机膦酸-过渡金属配合物/石墨烯的杂化结构设计及其阻燃增强环氧树脂的作用机理研究
- 批准号:52304233
- 批准年份:2023
- 资助金额:30 万元
- 项目类别:青年科学基金项目
相似海外基金
New Strategy for Synthesis of Atomically Precise Graphene Nanoribbons
合成原子级精确石墨烯纳米带的新策略
- 批准号:
2403736 - 财政年份:2024
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Open quantum dynamics of spin qubits on graphene nanoribbons
石墨烯纳米带上自旋量子位的开放量子动力学
- 批准号:
2744947 - 财政年份:2022
- 资助金额:
$ 30万 - 项目类别:
Studentship
LEAPS-MPS: Seeking Superlubricity at Single Molecule Level on Graphene Nanoribbons
LEAPS-MPS:寻求石墨烯纳米带单分子水平的超润滑性
- 批准号:
2213366 - 财政年份:2022
- 资助金额:
$ 30万 - 项目类别:
Standard Grant
Bottom-up synthesis of edge-engineered graphene nanoribbons
边缘工程石墨烯纳米带的自下而上合成
- 批准号:
2657922 - 财政年份:2021
- 资助金额:
$ 30万 - 项目类别:
Studentship
Development of Strain-controlled Multi-Graphene-Nanoribbons-Base Dumbbell-Shape Photovoltaic Devices
应变控制的多层石墨烯纳米带基哑铃形光伏器件的开发
- 批准号:
21J11599 - 财政年份:2021
- 资助金额:
$ 30万 - 项目类别:
Grant-in-Aid for JSPS Fellows