Development of Strain-controlled Multi-Graphene-Nanoribbons-Base Dumbbell-Shape Photovoltaic Devices
应变控制的多层石墨烯纳米带基哑铃形光伏器件的开发
基本信息
- 批准号:21J11599
- 负责人:
- 金额:$ 1.09万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for JSPS Fellows
- 财政年份:2021
- 资助国家:日本
- 起止时间:2021-04-28 至 2023-03-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In the previous year, the milestones set in the research plan has been acheived and published in academic journals. A highly repeatable, stable, and a reliable fabrication process for fabricating graphene nanoribbon(GNR) structures of ribbon width less than 70-nm has been established. Using this process methodology, GNR of width 30-nm can be patterned and structured on a device with stable electronic performance. The photonic properties of this device was tested under a solar simulator and two different wavelength of lights focused from a laser beam. When tested under a light beam of 532-nm, the device responded with a photonic responsivity of 5.5x10^3 (A/W) which is comparable and even larger than several graphene and GNR based devices in current literature. Secondly, the concept of controlling and further enhancing the electronic band properties of graphene nanoribbons by applied mechanical stress has also been tested and validated experimentally. The data showed a very high gauge factor of 1,500 under mechanical strain, which is also exceptionally larger than several metallic strain gauges. The concepts tested and validated in this research proves the feasibility of GNR structures application to high performing semiconductor devices. The data has been published in highly ranked academic journals and presented in two international conferences, in Japan and Portugal. In addition, the paper presented in Japan has received IEEE EPS Japan Chapter Award.
去年,研究计划中设定的里程碑已经实现并在学术期刊上发表。已经建立了一种高度可重复、稳定且可靠的制造工艺,用于制造带宽度小于70纳米的石墨烯纳米带(GNR)结构。使用这种工艺方法,可以在具有稳定电子性能的器件上对宽度为 30 nm 的 GNR 进行图案化和结构化。该设备的光子特性在太阳模拟器和激光束聚焦的两种不同波长的光下进行了测试。在 532 nm 光束下进行测试时,该器件的光子响应率为 5.5x10^3 (A/W),与当前文献中的几种基于石墨烯和 GNR 的器件相当甚至更大。其次,通过施加机械应力来控制和进一步增强石墨烯纳米带电子带性能的概念也经过了实验测试和验证。数据显示,机械应变下的应变系数非常高,达到 1,500,这也比几种金属应变计大得多。本研究中测试和验证的概念证明了 GNR 结构应用于高性能半导体器件的可行性。这些数据已发表在排名较高的学术期刊上,并在日本和葡萄牙的两次国际会议上发表。此外,在日本发表的论文还获得了 IEEE EPS 日本分会奖。
项目成果
期刊论文数量(8)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Improvement of Photosensitivity of Dumbbell-Shape GNR Structure by Applying Hetero Metallic Interconnection Structure
应用异质金属互连结构提高哑铃形GNR结构的光敏性
- DOI:
- 发表时间:2021
- 期刊:
- 影响因子:0
- 作者:平川大希;宮原悠馬;下川雄志;芳田嘉志;大山順也;町田正人;松井有美;Jowesh Avisheik Goundar;下田麻里子;Jowesh Avisheik Goundar
- 通讯作者:Jowesh Avisheik Goundar
Band-Gap Modulation of Dumbbell-Shaped Graphene Nanoribbon Structures by Application of Uniaxial Tensile Strain
应用单轴拉伸应变对哑铃形石墨烯纳米带结构进行带隙调制
- DOI:
- 发表时间:2022
- 期刊:
- 影响因子:0
- 作者:Goundar Jowesh Avisheik;Xiangyu Qiao;Suzuki Ken;Miura Hideo;宮原悠馬,平川大希,芳田嘉志,大山順也,町田正人;西山昂志,平川大希,佐藤徹哉,芳田嘉志,大山順也,町田正人;Jowesh Avisheik Goundar;Jowesh Avisheik Goundar
- 通讯作者:Jowesh Avisheik Goundar
Strain-Induced Change in the Photonic Properties of Dumbbell-Shaped Graphene Nanoribbon Structures
哑铃形石墨烯纳米带结构光子特性的应变诱导变化
- DOI:10.23919/icep55381.2022.9795457
- 发表时间:2022
- 期刊:
- 影响因子:0
- 作者:Goundar Jowesh Avisheik;Suzuki Ken;Miura Hideo
- 通讯作者:Miura Hideo
Electronic Band-Engineering of a Dumbbell-shaped Graphene Nanoribbon by the Application of Uniaxial Tensile Strain
应用单轴拉伸应变的哑铃形石墨烯纳米带电子能带工程
- DOI:10.23919/icep51988.2021.9451931
- 发表时间:2021
- 期刊:
- 影响因子:0
- 作者:Goundar Jowesh Avisheik;Zhang Qinqiang;Suzuki Ken;Miura Hideo
- 通讯作者:Miura Hideo
Improvement in Photosensitivity of Dumbbell-Shaped Graphene Nanoribbon Structures by Using Asymmetric Metallization Technique
利用不对称金属化技术提高哑铃形石墨烯纳米带结构的光敏性
- DOI:10.1115/imece2021-69917
- 发表时间:2021
- 期刊:
- 影响因子:0
- 作者:Goundar Jowesh Avisheik;Xiangyu Qiao;Suzuki Ken;Miura Hideo
- 通讯作者:Miura Hideo
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