2D Crystal Semiconductors: Electron Transport and Device Applications

2D 晶体半导体:电子传输和器件应用

基本信息

  • 批准号:
    1232191
  • 负责人:
  • 金额:
    $ 36万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2012
  • 资助国家:
    美国
  • 起止时间:
    2012-08-01 至 2015-02-28
  • 项目状态:
    已结题

项目摘要

The objective of this program is to unravel the science, and realize the technological potential of 2D crystal semiconductors focused on future generations of electronic devices. The intellectual merit is in the development of the science of controlled crystal growth of a range of new atomically thin 2D crystals and in the understanding of their physical properties. The electronic transport properties in 2D crystal semiconductors are currently not well understood. Yet, coupled with electrostatics, it is the key to device applications. Thus, this project aims directly at developing a thorough understanding of the transport properties of electrons in 2D crystal semiconductors through a combined experimental and modeling approach. The demonstration of their usage in large area, light, flexible and transparent high-performance electronic switches will be a transformative technology.The broader impacts are through an outreach program that effectively exploits the excitement and exceptional promise of the fledgling field, one where newcomers can make significant and lasting contributions. The proposed project involves several students. The theoretically oriented students will be involved in the project at the level of simulations of energy band diagrams and device structures. The experimentally inclined students will be involved in measurements of 2D crystal semiconductor properties and analysis. They will work directly with the PostDoctoral scholars, and the PIs by attending meetings and presenting their work. The project will result in the training of graduate students in a fascinating problem and its many fundamental consequences for electronic and optical devices. In additional to expanding the existing outreach programs that the PIs are orchestrating, two new activities are proposed with a special focus on the underrepresented groups: 1) experimental demonstration of nanoscale scanning probe techniques at the Expanding Your Horizon workshops where young school girls gather for their early exposure to how science and technology are employed in various careers, and 2) research projects designed for the women undergraduate students under the Dual Degree Program at the St. Mary?s College. The dissemination of research results by publications and presentations at conferences, and its inclusion in courses taught by the investigators will ensure the outreach of the research proposed to the widest possible audience.
该程序的目的是阐明科学,并实现针对后代电子设备的2D晶体半导体的技术潜力。 智力优点在于发展一系列新的原子薄晶体的受控晶体生长科学以及对其物理特性的理解。 目前尚不清楚2D晶体半导体中的电子传输性能。 然而,再加上静电,它是设备应用的关键。 因此,该项目直接旨在通过结合的实验和建模方法对2D晶体半导体中电子的传输特性进行彻底了解。它们在大面积,光线,灵活和透明的高性能电子开关中使用的证明将是一种变革性的技术。更广泛的影响是通过一项外展计划,有效利用了刚起步的领域的兴奋和非凡希望,新手可以做出重大和持久的贡献。 拟议的项目涉及几个学生。 理论上的学生将以能量带图和设备结构的模拟级别参与该项目。 实验倾斜的学生将参与2D晶体半导体特性和分析的测量。 他们将直接与博士后学者合作,并通过参加会议并介绍他们的工作。 该项目将导致研究生培训一个令人着迷的问题及其对电子和光学设备的许多基本后果。 除了扩大PI正在策划的现有外展计划外,还提出了两项​​新的活动,特别关注代表性不足的群体:1)在不断扩大的年轻学校的纳米级扫描探测技术的实验证明中,年轻的学校女孩聚集在各种妇女中,他们在研究中雇用了妇女,并在研究中雇用了妇女,以及2)妇女的研究,以及2)玛丽的研究人员? 大学。 会议上出版物和演讲对研究结果的传播及其包含在调查人员教授的课程中,将确保向最广泛的受众提出的研究的宣传。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

暂无数据

数据更新时间:2024-06-01

Debdeep Jena其他文献

Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy
分子束外延法在 m 面 α-Al2O3 上生长、催化和面对 α-Ga2O3 和 α-(InxGa1−x)2O3
  • DOI:
  • 发表时间:
    2023
    2023
  • 期刊:
  • 影响因子:
    6.1
  • 作者:
    Martin S. Williams;M. Alonso;M. Schowalter;A. Karg;Sushma Raghuvansy;Jon P. McCandless;Debdeep Jena;A. Rosenauer;Martin Eickhoff;Patrick Vogt
    Martin S. Williams;M. Alonso;M. Schowalter;A. Karg;Sushma Raghuvansy;Jon P. McCandless;Debdeep Jena;A. Rosenauer;Martin Eickhoff;Patrick Vogt
  • 通讯作者:
    Patrick Vogt
    Patrick Vogt
スパッタアニールAlN上GaN/AlN 2次元正孔ガス構造の電気特性評価と微細構造解析
溅射退火AlN上GaN/AlN二维空穴气体结构的电性能评估和微观结构分析
  • DOI:
  • 发表时间:
    2022
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    西村 海音;中西 悠太;林 侑介;藤平 哲也;Chaudhuri Reet;Cho Yongjin;Xing Huili (Grace);Debdeep Jena;上杉 謙次郎;三宅 秀人;酒井 朗
    西村 海音;中西 悠太;林 侑介;藤平 哲也;Chaudhuri Reet;Cho Yongjin;Xing Huili (Grace);Debdeep Jena;上杉 謙次郎;三宅 秀人;酒井 朗
  • 通讯作者:
    酒井 朗
    酒井 朗
Evidence of many-body, fermi-energy edge singularity in InN films grown on GaN buffer layers
GaN 缓冲层上生长的 InN 薄膜中多体费米能边缘奇点的证据
Growth windows of epitaxial NbN x films on c -plane sapphire and their structural and superconducting properties
c面蓝宝石外延NbN x 薄膜的生长窗口及其结构和超导性能
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
    J. Wright;Huili Grace;Debdeep Jena
    J. Wright;Huili Grace;Debdeep Jena
  • 通讯作者:
    Debdeep Jena
    Debdeep Jena
Tight-binding band structure of β- and α-phase Ga2O3 and Al2O3
β相和α相Ga2O3和Al2O3的紧结合​​能带结构
  • DOI:
    10.1063/5.0074598
    10.1063/5.0074598
  • 发表时间:
    2021
    2021
  • 期刊:
  • 影响因子:
    3.2
  • 作者:
    Yifan Zhang;Mengren Liu;G. Khalsa;Debdeep Jena
    Yifan Zhang;Mengren Liu;G. Khalsa;Debdeep Jena
  • 通讯作者:
    Debdeep Jena
    Debdeep Jena
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前往

Debdeep Jena的其他基金

I-Corps: Aluminum Nitride-based Power Transistors
I-Corps:氮化铝基功率晶体管
  • 批准号:
    1933825
    1933825
  • 财政年份:
    2019
  • 资助金额:
    $ 36万
    $ 36万
  • 项目类别:
    Standard Grant
    Standard Grant
RAISE-TAQS: Integrated Room Temperature Single-Photon based Quantum-Secure LiFi Systems
RAISE-TAQS:集成室温单光子量子安全 LiFi 系统
  • 批准号:
    1839196
    1839196
  • 财政年份:
    2018
  • 资助金额:
    $ 36万
    $ 36万
  • 项目类别:
    Standard Grant
    Standard Grant
Polarization-Driven Electron-Hole Bilayers in Quantum Wells
量子阱中偏振驱动的电子空穴双层
  • 批准号:
    1710298
    1710298
  • 财政年份:
    2017
  • 资助金额:
    $ 36万
    $ 36万
  • 项目类别:
    Continuing Grant
    Continuing Grant
EFRI NewLAW: Non-Reciprocal Wave Propagation Devices by Fermionic Emulation and Exceptional Point Physics
EFRI NewLAW:通过费米子仿真和异常点物理实现非互易波传播装置
  • 批准号:
    1741694
    1741694
  • 财政年份:
    2017
  • 资助金额:
    $ 36万
    $ 36万
  • 项目类别:
    Continuing Grant
    Continuing Grant
DMREF: Collaborative Research: Extreme Bandgap Semiconductors
DMREF:协作研究:极限带隙半导体
  • 批准号:
    1534303
    1534303
  • 财政年份:
    2015
  • 资助金额:
    $ 36万
    $ 36万
  • 项目类别:
    Standard Grant
    Standard Grant
2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
  • 批准号:
    1523356
    1523356
  • 财政年份:
    2015
  • 资助金额:
    $ 36万
    $ 36万
  • 项目类别:
    Standard Grant
    Standard Grant
Nanoscale Optoelectronics with Polarization and Bandgap Engineered Nitride Nanowire/Silicon Heterostructures
具有偏振和带隙工程氮化物纳米线/硅异质结构的纳米级光电器件
  • 批准号:
    0907583
    0907583
  • 财政年份:
    2009
  • 资助金额:
    $ 36万
    $ 36万
  • 项目类别:
    Standard Grant
    Standard Grant
Evaluation of Graphene Nanoribbons for Lateral Bandgap Engineered Devices
用于横向带隙工程器件的石墨烯纳米带的评估
  • 批准号:
    0802125
    0802125
  • 财政年份:
    2008
  • 资助金额:
    $ 36万
    $ 36万
  • 项目类别:
    Standard Grant
    Standard Grant
CAREER: Dielectric Engineering of Quantum Wire Solids: Fundamentals to Applications
职业:量子线固体的介电工程:应用基础
  • 批准号:
    0645698
    0645698
  • 财政年份:
    2007
  • 资助金额:
    $ 36万
    $ 36万
  • 项目类别:
    Continuing Grant
    Continuing Grant

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