Polarization-Driven Electron-Hole Bilayers in Quantum Wells

量子阱中偏振驱动的电子空穴双层

• 批准号: 1710298
• 负责人: Debdeep Jena
• 金额: $ 40万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-07-01 至 2021-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1710298&HistoricalAwards=false
• 关键词: Polarization; Driven; Electron; Hole; Bilayers

Non-technical description: This project aims to discover new electronic and optical phenomena hidden in a material system that is currently used in solid state lighting, in communication systems, and power electronics, and is in almost all iPhones and iPads. The research focuses on electrical charge carriers of opposite signs located very close to each other in gallium nitride quantum structures. The carriers of opposite signs maintain separate identities, until they receive a command (for example through a small voltage or a current), upon which they mix strongly to either emit light, or flow as currents with very little energy dissipation. This sort of phenomena has been long desired for making low-power or ultrafast and energy-efficient electronic switches, for photonic devices, and potentially for sensor environments. Thus, findings of this project have a potential to impact the electronics and photonics industries, and environmental health and safety systems. The project trains graduate students in a fascinating emerging field at the intersection of physics, materials science, and electrical engineering. In addition to expanding existing outreach programs, new activities are considered with a special focus on the high-school students and underrepresented groups, including direct school visits and in-class demonstrations. The dissemination of research results in journal publications, presentations at conferences and inclusion in courses taught by the PI made available online ensures the outreach to the widest possible audience.Technical description: This project explores the quantum transport and optical properties of III-nitride quantum structures and their potential applications in electron-hole bilayer systems, driven by large polarization fields. Such bilayers are difficult to create in other material systems either because of the lack of polarization, doping limitations, or because of low breakdown fields. When created (for example, in two-dimensional layered materials), additional challenges occur related to their chemical doping and contact reliability. In this project, the PI takes advantage of unique recent technological progress in epitaxially regrown contacts to two-dimensional electron and hole gases in novel compressively strained GaN quantum wells on AlN substrates to explore bilayer physics in a fundamentally new platform. Parallel two-dimensional systems of electrons and holes boast rich physics at several levels of complexity - from uncoupled two-dimensional electron-gas / two-dimensional hole gas p-n diodes that could lead to new electronic and photonic devices, to weakly coupled systems, exhibiting Coulomb drag, to strongly coupled systems that have shown glimpses of excitonic or Bose-Einstein condensation. And with the tantalizing possibility of polarization-driven topological edge states, the outcomes of the project has a potential for significant scientific and technological advances for ultra-low power electronic, photonic quantum information-processing applications.

非技术描述：该项目旨在发现隐藏在固态照明，通信系统和电力电子中的物质系统中的新的电子和光学现象，并且几乎都在所有iPhone和iPad中。该研究的重点是相反符号的电荷载体，位于氮化炮量子结构中。相反符号的载体保持单独的身份，直到收到命令（例如通过少量电压或电流），它们在其上强烈混合以发出光，或者像电流一样流动。长期以来，这种现象一直是为了制造低功率或超快和节能电子开关，用于光子设备，并且有可能用于传感器环境。因此，该项目的发现有可能影响电子和光子行业以及环境健康与安全系统。该项目在物理，材料科学和电气工程的交叉点上训练一个引人入胜的新兴领域的研究生。除了扩大现有的外展计划外，还考虑了新的活动，特别关注高中生和代表性不足的团体，包括直接学校访问和课堂示威。在网上提供的PI提供的研究结果，会议上的演讲以及包含在线的课程中的研究结果的传播结果可确保与最广泛的受众群体的宣传。技术描述：该项目探索了量子运输和III-nitride量子量子结构的量子运输及其潜在应用，并在电子 - 荷尔双层系统中受到大型偏光元素的驱动。由于缺乏极化，兴奋剂的局限性或较低的分解场，因此在其他材料系统中很难在其他材料系统中创建这样的双层。创建（例如，在二维分层材料中）时，会出现其他挑战与它们的化学掺杂和接触可靠性有关。在该项目中，PI利用了与新型压缩紧张的ALN底物上新型压缩的GAN量子井的外延相结合的近期技术进步​​，以探索基本新平台中的双层物理学。 Parallel two-dimensional systems of electrons and holes boast rich physics at several levels of complexity - from uncoupled two-dimensional electron-gas / two-dimensional hole gas p-n diodes that could lead to new electronic and photonic devices, to weakly coupled systems, exhibiting Coulomb drag, to strongly coupled systems that have shown glimpses of excitonic or Bose-Einstein condensation.随着极化驱动的拓扑边缘状态的诱人可能性，该项目的结果有可能取得了超低电力电子，光子量子信息处理应用的重大科学和技术进步。

项目成果

Hole mobility of strained GaN from first principles

• DOI: 10.1103/physrevb.100.085204
• 发表时间: 2019-08
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: S. Ponc'e;D. Jena;F. Giustino

Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design

采用埋入式隧道结设计通过 MBE 获得单片 p-down 氮化物激光二极管和 LED

• DOI: 10.1117/12.2548996
• 发表时间: 2020
• 期刊: Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design
• 作者: Turski, Henryk;Bharadwaj, Shyam;Siekacz, Marcin;Muziol, Grzegorz;Chlipala, Mikolaj;Zak, Mikolaj;Hajdel, Mateusz;Nowakowski-Szkudlarek, Krzesimir;Stanczyk, Szymon;Xing, Huili
• 通讯作者: Xing, Huili

GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current

具有 InGaN 触点和 100 mA/mm 导通电流的 GaN/AlN 肖特基栅极 p 沟道 HFET

• DOI: 10.1109/iedm19573.2019.8993532
• 发表时间: 2019
• 期刊: IEDM Proceedings 2019
• 作者: Bader, S. J.;Chaudhuri, R.;Hickman, A.;Nomoto, K.;Bharadwaj, S.;Then, H. W.;Xing, H. G.;Jena, D.
• 通讯作者: Jena, D.

Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions

• DOI: 10.1063/1.5088041
• 发表时间: 2018-10
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: H. Turski;S. Bharadwaj;H. Xing;D. Jena

Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting

• DOI: 10.1103/physrevlett.123.096602
• 发表时间: 2019-08-29
• 期刊: PHYSICAL REVIEW LETTERS
• 影响因子: 8.6
• 作者: Ponce, Samuel;Jena, Debdeep;Giustino, Feliciano
• 通讯作者: Giustino, Feliciano