ウルツ鉱型半導体の力学特性に及ぼす光環境効果の実験的計測とメカニズム解明

光环境对纤锌矿半导体机械性能影响的实验测量和机理阐明

• 批准号: 22K14143
• 负责人: LI YAN
• 金额: $ 2.91万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Early-Career Scientists
• 财政年份: 2022
• 资助国家: 日本
• 起止时间: 2022-04-01 至 2024-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-22K14143/
• 关键词: Photoindentation; compound semiconductors; oxides; crystal plasticity; dislocations; ウルツ鉱型結晶; 力学特性; 転位

This project aims to elucidate how light affects the mechanical properties of wurtzite semiconductors. Many advanced semiconductor compounds, such as GaN and ZnO, possess wurtzite structure, which consists of two individual hexagonal close-packed sublattices. In FY2022, our studies mainly focused on wurtzite ZnO, a representative third-generation semiconductor material. Photoindentation technique, i.e., in-situ nanoindentation experiments with a controllable light illumination system, was adopted to evaluate the mechanical responses at the nanoscale under different light conditions. Three types of photoindentation experiments were applied on two ZnO single crystals with different orientations. Low-load indentation pop-in tests were performed to investigate the light effects on dislocation nucleation. Middle-load quasi-indentation tests were conducted to verify the photo-hardening effects of different orientations. High-load indentation creep tests were carried out to study the influence of light on dislocation multiplication and motion along different slip planes. It was found that light only shows a slight influence on the dislocation nucleation event, but significantly affects dislocation motion.

该项目旨在阐明光如何影响纤锌矿半导体的机械性能。许多先进的半导体化合物，例如 GaN 和 ZnO，都具有纤锌矿结构，由两个单独的六方密排亚晶格组成。 2022财年，我们的研究主要集中在具有代表性的第三代半导体材料纤锌矿ZnO。采用光压痕技术，即利用可控光照明系统进行原位纳米压痕实验，以评估不同光照条件下纳米尺度的机械响应。对两种不同取向的 ZnO 单晶进行了三种类型的光压痕实验。进行低负载压痕弹出测试以研究光对位错成核的影响。进行中载荷准压痕试验，验证不同方向的光硬化效果。通过高载荷压痕蠕变试验来研究光对位错增殖和沿不同滑移面运动的影响。研究发现，光对位错成核事件的影响很小，但对位错运动的影响却很大。

项目成果

Effects of light illumination on the dislocation behavior in single-crystalline ZnO for basal slip

光照对单晶 ZnO 基底滑移位错行为的影响

• 发表时间: 2022
• 作者: Yan Li;Xufei Fang;Eita Tochigi;Yu Oshima;Sena Hoshino;Hiroto Oguri;Yuichi Ikuhara;Katsuyuki Matsunaga;Atsutomo Nakamura
• 通讯作者: Atsutomo Nakamura

Shedding new light on the dislocation-mediated plasticity in wurtzite ZnO single crystals by photoindentation

• DOI: 10.1016/j.jmst.2023.02.017
• 发表时间: 2023-03
• 期刊: Journal of Materials Science & Technology
• 作者: Yan Li;X. Fang;E. Tochigi;Y. Oshima;Sena Hoshino;Takazumi Tanaka;Hiroto Oguri;S. Ogata;Y. Ikuhara;K. Matsunaga;A. Nakamura

Effects of Light Illumination on the Dislocation-mediated Plasticity in Single-crystalline ZnO

光照对单晶 ZnO 位错介导塑性的影响

• 发表时间: 2022
• 作者: Yan Li;Xufei Fang;Eita Tochigi;Yu Oshima;Katsuyuki Matsunaga;Atsutomo Nakamura
• 通讯作者: Atsutomo Nakamura

酸化亜鉛の底面すべり挙動に及ぼす光照射効果のナノスケール評価

纳米尺度评价光照射对氧化锌基底滑移行为的影响

• 发表时间: 2022
• 作者: Yan Li;Xufei Fang;Eita Tochigi;Yu Oshima;Katsuyuki Matsunaga;Atsutomo Nakamura;李燕，方旭飛，栃木栄太，幾原雄一，尾方成信，大島優，松永克志，中村篤智
• 通讯作者: 李燕，方旭飛，栃木栄太，幾原雄一，尾方成信，大島優，松永克志，中村篤智