Development of advanced metal oxide materials for next generation nonvolatile memory devices

开发用于下一代非易失性存储器件的先进金属氧化物材料

• 批准号: DP110102391
• 负责人: Prof Dewei Chu
• 金额: $ 29.27万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2011
• 资助国家: 澳大利亚
• 起止时间: 2011-04-18 至 2014-04-18
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP110102391
• 关键词: Development; advanced; metal; oxide; materials

The purpose of the project is to explore a new memory technology, resistive random-access memory, that can be made smaller than those of today, as well as preferably being faster, power saving and nonvolatile. The project is expected to bring resistive random-access memory materials a step closer to nonvolatile memory devices application.

该项目的目的是探索一种新的内存技术，即电阻随机记忆，可以使其比今天的内存更小，并且最好更快，节能和非挥发性。预计该项目将使电阻随机访问记忆材料更靠近非易失性存储设备应用程序。