Building Novel Solid State Electric Double Layer Transistors with Interface Engineering of Ionic Conductive Oxide Superlattices

利用离子导电氧化物超晶格界面工程构建新型固态双电层晶体管

• 批准号: FT140100032
• 负责人: Prof Dewei Chu
• 金额: $ 50.7万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: ARC Future Fellowships
• 财政年份: 2014
• 资助国家: 澳大利亚
• 起止时间: 2014-10-01 至 2018-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/FT140100032
• 关键词: Building; Novel; Solid; State; Electric

Transistors are the fundamental building blocks of modern electronic devices, which continue to diminish in size to achieve higher speeds. However, the development of this technology has been impeded by low carrier density in the gate dielectric materials. Therefore, increasing the attainable carrier density has become critically important for both scientific research and industrial applications. This project aims at experimental and theoretical development of advanced ionic conductive oxide superlattices with colloidal nanocubes for novel solid state electric double layer transistors, which possess ultrahigh carrier density and mobility, to surmount the fundamental limit of current silicon semiconductor technologies.

晶体管是现代电子设备的基本组成部分，它的尺寸继续减小以达到更高的速度。但是，该技术的开发受到栅极介电材料中低载体密度的阻碍。因此，提高可达到的载体密度对于科学研究和工业应用至关重要。该项目旨在使用具有超高载体密度和迁移率的新型固态电动双层晶体管的高级离子导电氧化物超级晶体管的实验和理论发展，以指出当前硅半导体技术的基本限制。