CDT Compound Semiconductor Physics (PhD Progression 1+3)

CDT 化合物半导体物理（博士进修 1 3）

• 批准号: 2882400
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2882400
• 关键词: CDT; Compound; Semiconductor; Physics; PhD

The team in Cardiff successful grows epitaxial gallium nitride (GaN) layers on (111) silicon (Si) substrates. This may be one solution to enable integration of light emitting diodes (LEDs) for photonics onto standard Si process technology production lines. Key issues are wafer cracking due to -17% tensile strain of the GaN and the generation of dense misfit dislocation networks due to the misfit and the thermal expansion mismatch between GaN and Si and also the formation of good ohmic electrical contacts for device operation. Various methods to explore and reduce lattice strain will be investigated in this combined electron microscopy and electron spectroscopy study where one key question to answer is whether and to what degree the anneal of the electrical contacts enhances strain relaxation in the GaN layers underneath.Energy-dispersive X-ray spectroscopy (EDX), EDX mapping, electron energy-loss spectroscopy (EELS) with energy-loss near-edge spectroscopy (ELNES) and energy-filtered imaging (EFTEM) will be used in project B to study the local chemistry in cross-section, to measure interdiffusion at the atomic scale and optimise the quality of the electrical contact multilayers that require annealing after deposition.

卡迪夫的团队成功在 (111) 硅 (Si) 衬底上生长外延氮化镓 (GaN) 层。这可能是一种能够将光子学发光二极管 (LED) 集成到标准硅工艺技术生产线上的解决方案。关键问题是由于 GaN 的 -17% 拉伸应变导致的晶圆破裂，以及由于 GaN 和 Si 之间的失配和热膨胀失配而产生的密集失配位错网络，以及器件运行所需的良好欧姆电接触的形成。在这项电子显微镜和电子能谱相结合的研究中，我们将研究探索和减少晶格应变的各种方法，其中需要回答的一个关键问题是电接触退火是否以及在多大程度上增强了下面 GaN 层的应变弛豫。项目 B 将使用 X 射线光谱 (EDX)、EDX 测绘、电子能量损失光谱 (EELS) 以及能量损失近边光谱 (ELNES) 和能量过滤成像 (EFTEM) 来研究横截面，以测量原子尺度的相互扩散并优化沉积后需要退火的电接触多层的质量。