CDT Compound Semiconductor Physics (PhD Progression 1+3)

CDT 化合物半导体物理（博士进修 1 3）

• 批准号: 2881682
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2881682
• 关键词: CDT; Compound; Semiconductor; Physics; PhD

Visible emitters for Displays are a focus of IQEs R&D and of considerable interest worldwide. The PhD will cover RGB micro-LEDs for next generation displays (on 200mm substrates) as well as lasers. Work will involve designing suitable layer structures, producing new fast-fabrication approaches to provide automated and rapid characterisation and comparing the performance, manufacturability and environmental footprint of different approaches. For example, red-emitters could be produced using GaInP QWs and grown on GaAs or Ge 200mm substrates (world-first) or using InGaN micro-LEDs, which could be easier to integrate with blue and green. Individually the former is probably easier to manufacture but the latter probably has a better environmental footprint. Work will include Life Cycle Analysis to determine the best environmental approach for the full RGB display. Other challenges include internal and external quantum efficiency, viewing angle and layer architectures for integration. There are several potential strategies for InGaN lasers and we should compare performance obtained with monolithic cavity structures against e.g. semiconductor amplifiers coupled with high-finesse silicon-nitride cavities. We envisage close-cooperation between the team and the development of world-leading understanding of the complex relationships between design, growth and fabrication to create a world-leading technology that is high-performance and environmentally-sustainable.

用于显示器的可见光发射器是 IQE 研发的重点，并且在全世界范围内引起了极大的兴趣。该博士学位将涵盖用于下一代显示器（在 200mm 基板上）的 RGB micro-LED 以及激光器。工作将包括设计合适的层结构、产生新的快速制造方法以提供自动化和快速表征，以及比较不同方法的性能、可制造性和环境足迹。例如，红光发射器可以使用 GaInP QW 生产，并在 GaAs 或 Ge 200mm 基板上生长（世界首创），或者使用 InGaN micro-LED，这样更容易与蓝光和绿光集成。单独而言，前者可能更容易制造，但后者可能具有更好的环境足迹。工作将包括生命周期分析，以确定全 RGB 显示器的最佳环境方法。其他挑战包括内部和外部量子效率、视角和集成层架构。 InGaN 激光器有几种潜在的策略，我们应该将单片腔结构与例如单片腔结构获得的性能进行比较。半导体放大器与高精度氮化硅腔相结合。我们设想团队之间密切合​​作，并对设计、生长和制造之间的复杂关系形成世界领先的理解，从而创造出高性能和环境可持续的世界领先技术。