Developing Semi-Insulating Silicon Carbide Epitaxy

开发半绝缘碳化硅外延

• 批准号: 2678922
• 金额: --
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2678922
• 关键词: Developing; Semi; Insulating; Silicon; Carbide

Microelectronic device technology - Physical SciencesThe project aims to develop Silicon Carbide (SiC) semi-insulating materials for application in the RF and microwave electronics industry. It will consist of materials characterisation and device construction, all using facilities at Warwick. The particular method to construct SiC semi-insulating materials is by the introduction of new precursors in the materials facility Warwick, to be performed by existing Warwick staff. The student will develop the characterisation techniques to define a thick semi-insulating layer using microscopy and basic electrical testing. Knock-on effects must be controlled without transferring to other materials made in the system (e.g. autodoping, memory effect, diffusivity, segregation etc.). This will undergo many loops with the student contributing to improving the material fabrication system by parameters such as purity of control methodology, precursor, pressure, mass flow, temperature etc. Then, the student will construct devices on the developed platform utilising a standard construction process. This will result in new technologies, which could be included in many RF and microwave electronics areas.

微电子器件技术-物理科学该项目旨在开发应用于射频和微波电子行业的碳化硅（SiC）半绝缘材料。它将包括材料表征和设备构建，所有这些都使用沃里克的设施。构建 SiC 半绝缘材料的特殊方法是在沃里克材料工厂引入新的前体，由现有沃里克员工执行。学生将开发表征技术，使用显微镜和基本电气测试来定义厚的半绝缘层。必须控制连锁效应，而不会转移到系统中制造的其他材料（例如自动掺杂、记忆效应、扩散性、偏析等）。这将经历许多循环，学生将通过控制方法纯度、前体、压力、质量流量、温度等参数来改进材料制造系统。然后，学生将利用标准构建流程在开发的平台上构建设备。这将催生新技术，这些技术可能被纳入许多射频和微波电子领域。