Study of Ill-V Nitride Semiconductor Resonant Cavity Enhanced Photodetector by Molecular Beam Epitaxy

III-V族氮化物半导体谐振腔增强型分子束外延光电探测器研究

• 批准号: 09650388
• 负责人: KISHINO Katsumi
• 金额: $ 2.18万
• 依托单位: Sophia University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650388/
• 关键词: gallium nitride; aluminum nitride; resonant cavity enhanced nhotodetector; molecular beam epitaxy; shutter control method; UV detector; nitride semiconductor; distributed Bragg reflector; アルミニウムナイトライド; 窒化物半導体; 分子線エピタキシ-

The resonant cavity enhanced photodetector (RCE-PD) is expected to have wavelength selectivity, high quantum efficiency and high-speed characteristics. The photosensitivity characteristics of AlGaN based RCE-PD was theoretically investigate.Investigation of high-quality GaN growth on (0001) AlィイD22ィエD2OィイD23ィエD2 substrates by molecular beam epitaxy using elemental Ga and re-plasma nitrogen as source was carried out. Extreme high-speed GaN growth of 2.6um/hr was also demonstrated by increase of radical nitrogen supply at the substrates. Novel shutter control technique in which nitrogen was alternately supplied during continuous Ga supply was applied for Mg doped GaN growth. As grown p-type GaN with low resistivity (p=2x10ィイD117ィエD1cmィイD1-3ィエD1, ρ=3.8Ωcm) was obtained.The crystal polarity control technique was also demonstrated. The high-temperature grown AlN buffer layer brought about a Ga-polarity GaN growth and the high-temperature grown AlN intermediate layers (HT-AlN-ILs) with diffe … More rent thickness were found to play different roles in improvement of crystal quality. The 8nm-thick HT-AlN-IL brought about improvement of electrical properties. On the other hand, the 2nm-thick HT-AlN-IL improved surface morphology. The combination of these 8nm-thick and 2nm-thick HT-AlN-ILS improved both electrical property and surface morphology, concurrently.Nitrogen polarity-GaN could be grown on the AlィイD12ィエD1OィイD13ィエD1 substrates with enough initial nitridation by RF-plasma nitrogen. The GaN layers were grown with migration enhanced epitaxy (MEE). The dislocation density of MEE-GaN remarkably reduced by insertion of the HT-AlN-ILs and it was clearly observed that most dislocations were bent during passing through the HT-AlN-IL. The dislocation density of MEE-GaN grown on HT-AlN-IL was evaluated to be about 2.1x10ィイD19ィエD1cmィイD1-2ィエD1 by a selective photoelectrochemical wet etching, as a result, the highest RT mobility of 668cmィイD12ィエD1/Vs was achieved.The AlGaN distributed Bragg reflectors for at blue and UV region were grown by molecular beam epitaxy using RF-plasma excited nitrogen. Relatively high reflectivity of 95% and 92% was achieved at the wavelength of 444nm and 377nm, respectively. Less

谐振腔增强的光电探测器（RCE-PD）有望具有波长的选择性，高量子效率和高速特征。理论上研究了基于Algan的RCE-PD的光敏性特性。使用元素GA和Re-Plasma Nitrogen通过分子束的外观和重质氮气作为源来进行分子束的外观，对（0001）Alili d22ie D23IE D2底物进行研究。通过增加底物的自由基氮供应的增加，也证明了极高的高速GAN生长2.6UM/HR。新型的快门控制技术，其中在连续GA供应期间替代氮的氮气被用于Mg掺杂的GAN生长。由于获得了低电阻的p型gan（p = 2x10d117d1cmd1-3d1，ρ=3.8Ωcm）。还证明了晶体极性控制技术。高温种植的ALN缓冲层带来了GA极性GAN的生长和具有不同的高温种植的Aln Aln中间层（HT-ALN-IL）……发现更多的租赁厚度在改善晶体质量方面起着不同的作用。 8nm厚的ht-aln-il带来了电性能的改善。另一方面，2nm厚的HT-Aln-IL改善了表面形态。这些8nm Thick和2nm-Thick Ht-Aln-Ils的组合改善了电性能和表面形态，同时可以在Alice D12IE D12IE D1OI D13IE D13IE D1底物上生长氮极性 - 通过RF-Pla-Plasma Nitrrogen通过足够的初始硝化。 gan层随着迁移增强的外观（MEE）而生长。 Mee-GAN的位错密度通过插入HT-ALN-IL的插入明显降低，并且清楚地观察到大多数位错在通过HT-Aln-IL期间都是BEN。评估在HT-ALN-IL上生长的Me-GAN的脱位密度约为2.1x10 d19 d1cm d1-2 d1-2 d1 d1 d1 d1通过选择性的光电化学湿蚀刻，因此，使用了668cm d12 d1/vs的最高RT迁移率。 RF - 血压激发氮。在444nm和377nm的波长下，相对较高的反射率分别达到95％和92％。较少的

项目成果

佐々本一 他: "エッチングによるサファイア基板平坦化のGaN成長への寄与" 第58回応用物理学会学術講演会. 4aQ6 (1997)

Hajime Sasamoto 等人：“蚀刻蓝宝石衬底的平坦化对 GaN 生长的贡献”第 58 届日本应用物理学会年会 4aQ6（1997 年）。

Daisuke Sugihara et al.: "Suppression of inversion domain and decrease of threading dislocations in migration enhanced epitaxial GaN by RF-molecular beam epitaxy"Phisica Status Solidi. (印刷中).

Daisuke Sugihara 等人：“通过射频分子束外延抑制迁移增强外延 GaN 中的反转域并减少螺纹位错”Phisica Status Solidi（出版中）。

Kouichi Kushi et al.: "High speed growth of device quality GaN and InGaN by RF-MBE"Materials Science & Eng. B. B59. 65-68 (1999)

Kouichi Kushi 等人：“通过 RF-MBE 高速生长器件质量 GaN 和 InGaN”材料科学

Shinichi Nakamura et al.: "InGaN/GaN MQW and Mg-doped GaN growth using a shutter control method by RF-molecular beam epitaxy"Phisica Status Solidi(a). 176. 273-277 (1999)

Shinichi Nakamura 等人：“使用 RF 分子束外延的快门控制方法进行 InGaN/GaN MQW 和 Mg 掺杂 GaN 生长”Phisica Status Solidi(a)。

Kouichi Kushi et al.: "High speed growth of device quality GaN and InGaN by RF-MBE"Materials Science & Engineering B. B59. 65--68 (1999)

Kouichi Kushi 等人：“通过 RF-MBE 高速生长器件质量 GaN 和 InGaN”材料科学