Study of Ill-V Nitride Semiconductor Resonant Cavity Enhanced Photodetector by Molecular Beam Epitaxy

III-V族氮化物半导体谐振腔增强型分子束外延光电探测器研究

基本信息

批准号：
09650388
负责人：
KISHINO Katsumi
金额：
$ 2.18万
依托单位：
Sophia University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650388/
关键词：
gallium nitride aluminum nitride resonant cavity enhanced nhotodetector molecular beam epitaxy shutter control method UV detector nitride semiconductor distributed Bragg reflector アルミニウムナイトライド窒化物半導体分子線エピタキシ-

项目摘要

The resonant cavity enhanced photodetector (RCE-PD) is expected to have wavelength selectivity, high quantum efficiency and high-speed characteristics. The photosensitivity characteristics of AlGaN based RCE-PD was theoretically investigate.Investigation of high-quality GaN growth on (0001) AlィイD22ィエD2OィイD23ィエD2 substrates by molecular beam epitaxy using elemental Ga and re-plasma nitrogen as source was carried out. Extreme high-speed GaN growth of 2.6um/hr was also demonstrated by increase of radical nitrogen supply at the substrates. Novel shutter control technique in which nitrogen was alternately supplied during continuous Ga supply was applied for Mg doped GaN growth. As grown p-type GaN with low resistivity (p=2x10ィイD117ィエD1cmィイD1-3ィエD1, ρ=3.8Ωcm) was obtained.The crystal polarity control technique was also demonstrated. The high-temperature grown AlN buffer layer brought about a Ga-polarity GaN growth and the high-temperature grown AlN intermediate layers (HT-AlN-ILs) with diffe … More rent thickness were found to play different roles in improvement of crystal quality. The 8nm-thick HT-AlN-IL brought about improvement of electrical properties. On the other hand, the 2nm-thick HT-AlN-IL improved surface morphology. The combination of these 8nm-thick and 2nm-thick HT-AlN-ILS improved both electrical property and surface morphology, concurrently.Nitrogen polarity-GaN could be grown on the AlィイD12ィエD1OィイD13ィエD1 substrates with enough initial nitridation by RF-plasma nitrogen. The GaN layers were grown with migration enhanced epitaxy (MEE). The dislocation density of MEE-GaN remarkably reduced by insertion of the HT-AlN-ILs and it was clearly observed that most dislocations were bent during passing through the HT-AlN-IL. The dislocation density of MEE-GaN grown on HT-AlN-IL was evaluated to be about 2.1x10ィイD19ィエD1cmィイD1-2ィエD1 by a selective photoelectrochemical wet etching, as a result, the highest RT mobility of 668cmィイD12ィエD1/Vs was achieved.The AlGaN distributed Bragg reflectors for at blue and UV region were grown by molecular beam epitaxy using RF-plasma excited nitrogen. Relatively high reflectivity of 95% and 92% was achieved at the wavelength of 444nm and 377nm, respectively. Less

谐振腔增强光电探测器（RCE-PD）有望具有波长选择性、高量子效率和高速特性，从理论上研究了基于AlGaN的RCE-PD的光敏特性。（0001）上高质量GaN生长的研究。以元素Ga和再等离子体氮为源，进行了AliD22D2OD23D2衬底的超高速分子束外延。通过增加衬底上的自由基氮供应，也证明了 2.6um/hr 的 GaN 生长速度，其中在连续 Ga 供应期间交替供应氮气，用于生长低砷的 Mg 掺杂 p 型 GaN。获得了电阻率（p=2x10D117D1cm，ρ=3.8Ωcm）。还演示了晶体极性控制技术。高温生长的 AlN 缓冲层带来了 Ga 极性 GaN 的生长，并且不同厚度的高温生长的 AlN 中间层 (HT-AlN-IL) 在提高 8nm 晶体质量方面发挥着不同的作用。另一方面，2nm厚的HT-AlN-IL改善了表面形态。 2nm厚的HT-AlN-ILS同时改善了电性能和表面形貌。通过射频等离子体氮进行足够的初始氮化，可以在AlD12D1OD13D1衬底上生长氮极性-GaN。通过迁移增强外延（MEE）生长GaN层通过插入 HT-AlN-IL，MEE-GaN 的位错密度显着降低。可以清楚地观察到，大多数位错在穿过 HT-AlN-IL 的过程中发生了弯曲。通过选择性光电化学湿法刻蚀，在 HT-AlN-IL 上生长的 MEE-GaN 的位错密度约为 2.1x10D19cmD1 -2D1。结果，实现了 668cmD12D1/Vs 的最高 RT 迁移率。使用射频等离子体激发氮通过分子束外延生长了蓝光和紫外区的 AlGaN 分布式布拉格反射器，在 444nm 和 377nm 的波长下分别实现了 95% 和 92% 的较高反射率。