RESEARCH OF STACKED TWIN-ACTIVE LAYER GaInAsP/InP DYNAMIC SINGLE MODE LASERS

叠式双活性层GaInAsP/InP动态单模激光器的研究

基本信息

批准号：
63550295
负责人：
KISHINO Katsumi
金额：
$ 1.47万
依托单位：
SOPHIA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1988
资助国家：
日本
起止时间：
1988 至 1989
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-63550295/
关键词：
STACKED TWIN-ACTIVE LAYER STRUCTURE TUNNEL JUNCTION GRATING HIGH LIGHT OUTPUT DYNAMIC SINGLE MODE HIGH EFFICIENCY OPTICAL COMMUNICATION LASERS GAS-SOURCE MBE 二段活性層構造高光出力 DFBレーザ光通信用レーザ

项目摘要

1)The novel stacked twin-active layer structure consisted of two laser regions stacked along the vertical direction, which are connected each other through tunnel junction. When we use this structure for dynamic single mode lasers, a grating is integrated in the tunnel junction part corrugating the surface.2)First, we clarified the impurity doping condition to get a low reverse junction voltage for simple GaInAsP/InP tunnel junctions because the low voltage was essential for connecting two lasers. GaInAsP/InP stacked twin-active layer lasers were fabricated by a liquid phase epitaxy controlling the layer thicknesses in designed values, and the growth condition to connect two active layers by the tunnel junction was obtained. The threshold current density was 2.5kA/cm^2 in average, which was comparable with conventional DH lasers without active layer stack.3)Using the Laser wafer, ridge-waveguide lasers with the stripe width of 3mum were fabricated to get the threshold current of 6OmA a … More t 1.5mum in wavelength. Eventually introducing buried heterostructure is essential, so we tried the use of mass- transportation method to fabricate the buried heterostructure laser. But the degradation of tunneling property was observed after the high temperature annealing process. Thus it was confirmed that the embedding by use of high resistive semiconductors was the only method to embed such a multiple active layers structure.4)The laser waveguide of the stacked twin-active layer GaInAsP/InP dynamic single mode laser was analyzed theoretically. The waveguide design for the fundamental transverse mode operation was given and the laser was fabricated by liquid phase epitaxy. After the growth, the depth of grating became shallow in 200-300A^^ﾟ. This is a specific problem for liquid phase epitaxy, so to avert such a grating deformation the use of molecular beam epitaxy is needed. The threshold current density was 3-4KA/cm^2.5)Through the investigation of lasing properties, it was clarified that for the stacked twin-active layer laser, to equate the thickness of upper and lower active layers was important. So the gas-source molecular beam epitaxy (MBE) with a high thickness controllability, was introduced because GaInAsP compounds could be grown though using MBE. The fundamental growth condition of phosphide compounds such as GaInP and so on was obtained. Less

1）新颖的堆叠双有源层结构由两个沿垂直方向堆叠的激光区域组成，它们通过隧道结相互连接当我们将该结构用于动态单模激光器时，光栅被集成在隧道结部分。 2）首先，我们阐明了杂质掺杂条件，以获得简单的GaInAsP/InP隧道结的低反向结电压，因为低电压对于连接两个GaInAsP/InP堆叠激光器至关重要。通过控制层厚在设计值的液相外延技术制备了双有源层激光器，得到了隧道结连接两个有源层的生长条件，阈值电流密度平均为2.5kA/cm^2。与没有有源层堆叠的传统DH激光器相当。3）使用激光晶片，制造了条带宽度为3μm的脊形波导激光器，获得了6OmA的阈值电流...波长大于1.5μm，最终引入埋入式异质结构是必要的，因此我们尝试使用质量传输方法来制造埋入式异质结构激光器，但在高温退火过程后观察到隧道性能的下降，从而证实了这一点。认为采用高阻半导体嵌入是嵌入这种多有源层结构的唯一方法。4)对堆叠双有源层GaInAsP/InP动态单模激光器的激光波导进行了分析理论上给出了基本横模操作的波导设计，并且通过液相外延制造了激光器，生长后光栅的深度变浅在200-300A^^ﾟ这是液相外延的一个特定问题。，因此为了避免这种光栅变形，需要采用分子束外延，阈值电流密度为3-4KA/cm^2.5)通过激光特性的研究，得到了这种结构。阐明了对于堆叠双有源层激光器，使上下有源层的厚度相等很重要，因此引入了具有高厚度可控性的气源分子束外延（MBE），因为可以生长GaInAsP化合物。通过MBE得到了GaInP等磷化物的基本生长条件。

项目成果

期刊论文数量（8）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

岸野克巳,加藤美一,金子和: "Structure Design of Stacked Twin-Active Layer GaInAsP/InP DFB Lasers" IEEE J.Quantum Electron.

Katsumi Kishino、Yoshikazu Kato、Kazu Kaneko：“堆叠式双活性层 GaInAsP/InP DFB 激光器的结构设计”IEEE J.Quantum Electron。

DOI：
发表时间：
期刊：
影响因子：
0
作者：
通讯作者：

菊池昭彦,金子和,野村一郎,岸野克巳: "Gas Source Molecular Beam Epitaxial Growth of High Optical Quality GaInP and GaInP/AlInP Multiple Quantum Wells" to be published in the Conference Series of Trans Tech Publications Ltd.,(for 1st Int.Conf.on Epitaxial Crystal Grwth).

Akihiko Kikuchi、Kazu Kaneko、Ichiro Nomura、Katsumi Kishino：“高光学质量 GaInP 和 GaInP/AlInP 多量子阱的气源分子束外延生长”将在 Trans Tech Publications Ltd. 会议系列中发表（第一届 Int） .关于外延晶体生长的会议）。