Basic research on optical communication wavelength inter-subband transition of III-nitride semiconductors

III族氮化物半导体光通信波长子带间跃迁基础研究

• 批准号: 14205057
• 负责人: KISHINO Katsumi
• 金额: $ 34.78万
• 依托单位: Sophia University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14205057/
• 关键词: inter subband transition; Gallium nitride; Aluminum nitride; molecular beam epitaxy; optical communication; multiple quantum well; optical integrated circuit; pump-probe technique; 超格子

The characteristics of intersubband transition in III-nitride quantum wells (QWs) are promising for ultra-high speed optical communication devices such as detectors, modulators and all-optical switches.In this research project, clear optical absorption and ultra-fast absorption relaxation were demonstrated by GaN/AlN MQW crystals which grown by rf-plasma assisted molecular beam epitaxy (RF-MBE).First of all, we have optimized a growth condition of AlN buffer layer by RF-MBE and atomically flat AlN was obtained on sapphire substrate then growth condition of GaN/AlN MQW was optimized, consequently high quality GaN/AlN ISBT crystal could be obtained. We also carried out systematic investigation of FWHM of ISBT absorption spectra dependence on in-plan distribution of GaN well layer thickness and surface roughness RMS value.The carrier relaxation dynamics was investigated by two-color pump-probe technique in a wide energy range around 800 meV (1.55μm). The observed relaxation time was composed by ultra-fast 140 fs component and slow 1.3 ps one. Carrier relaxation model was constructed considering a phase space filling of the upper subband and a carrier cooling process in the lower subband.All-optical modulation using 1.55 pm ISBT resonant induced by UV interband (IBT) resonant light (325 nm or 213 nm) was demonstrated by GaN/AlN MQW waveguide device.The growth condition of GaN based nanocolumns including GaN/AlN MQW was developed and optical properties were investigated. The ISBT absorption at 1.55μm was observed for nanocolumns for the first time.In-rich InGaN is an attractive candidate for ISBT material at optical communication wavelength due to large conduction band offset between GaN and AlN. We have demonstrated the growth of high quality In-rich InGaN by RF-MBE.

III族氮化物量子阱（QW）中的子带间跃迁特性对于超高速光通信器件（例如探测器、调制器和全光开关）具有广阔的应用前景。在该研究项目中，清晰的光吸收和超快吸收弛豫得到了应用。通过射频等离子体辅助分子束外延（RF-MBE）生长的 GaN/AlN MQW 晶体进行了演示。首先，我们通过 RF-MBE 优化了 AlN 缓冲层的生长条件，并在蓝宝石衬底上获得原子级平坦的 AlN，然后优化 GaN/AlN MQW 的生长条件，可以获得高质量的 GaN/AlN ISBT 晶体，我们还系统研究了 ISBT 吸收光谱的半高宽与平面内分布的关系。 GaN阱层厚度和表面粗糙度RMS值。通过双色泵浦探针技术在800 meV（1.55μm）左右的宽能量范围内研究载流子弛豫动力学。观测到的弛豫时间由超快的140 fs分量和慢速的1.3 ps分量组成，考虑到上子带的相空间填充和下子带的载流子冷却过程。使用1.55 pm的全光调制。通过 GaN/AlN MQW 波导器件演示了 UV 带间 (IBT) 谐振光（325 nm 或 213 nm）诱导的 ISBT 谐振。开发了包括 GaN/AlN MQW 在内的 GaN 基纳米柱，并首次研究了纳米柱在 1.55μm 处的 ISBT 吸收。由于高传导性，富 InGaN 是光通信波长下 ISBT 材料的有吸引力的候选者。 GaN 和 AlN 之间的能带偏移 我们已经通过 RF-MBE 演示了高质量富 InGaN 的生长。

项目成果

Photoluminescence of exciton and biexciton in GaN nanocolumns

• DOI: 10.1016/j.jlumin.2007.12.021
• 发表时间: 2008-05
• 期刊: Journal of Luminescence
• 影响因子: 3.6
• 作者: K. Kouyama;Masaya Inoue;Y. Inose;N. Suzuki;H. Sekiguchi;H. Kunugita;K. Ema;A. Kikuchi;K. Kishino

浜崎 淳一 他: "GaN/AlN多重量子井戸におけるサブバンド間遷移の吸収飽和と高速緩和過程"日本物理学会2003年度秋季大会 講演予稿集. 21p-SB-2 (2003)

Junichi Hamasaki 等人：“GaN/AlN 多量子阱中子带间跃迁的吸收饱和和快速弛豫过程”日本物理学会 2003 年秋季会议论文集 21p-SB-2 (2003)。

J.Hamazaki et al.: "Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple quantum wells"Applied Physics Letters. 84・7. 1102-1104 (2003)

J. Hamazaki 等人：“GaN/AlN 多量子阱中 1.55 μm 处的超快子带间弛豫和非线性磁化率”应用物理快报 84・7 (2003)。

J.Hamazaki et al.: "Ultrafast intersubband relaxation at 1.55 μm in GaN/AlN MQWs"Proceedings of the 5th Pacific Rim Conference on Lasers and Electro-optics. 2. 548 (2003)

J. Hamazaki 等人：“GaN/AlN MQW 中 1.55 μm 处的超快子带间弛豫”第五届环太平洋激光和电光会议论文集 2. 548 (2003)。

後藤芳雄 他: "1.55μm光通信波長AlGaN/GaN方向性結合器の作製"第63回応用物理学会学術講演会 講演予稿集. 24p-B-5 (2002)

Yoshio Goto 等：“1.55 μm 光通信波长 AlGaN/GaN 定向耦合器的制作”第 63 届日本应用物理学会年会论文集 24p-B-5 (2002)。