Surface activated bonding of GaN and its application for optical devices

GaN表面活化键合及其在光学器件中的应用

基本信息

批准号：
17360155
负责人：
HIGURASHI Eiji
金额：
$ 6.14万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17360155/
关键词：
Gallium nitride Bonding Surface activation Aluminum Fast atom beam シリコンオーミックコンタクト

项目摘要

Bonding of n-type GaN to gallium arsenide (GaAs) and polycrystalline Al was realized by surface activated bonding method at room temperature. The interface microstructure, bonding strength, and electrical characteristics of bonded interface junctions have been investigated through transmission electron microscopy (TEM), die-shear strength testing, tensile strength testing, and current-voltage (I-V) measurements. The silicon doped n-type GaN films used in this experiment were grown by metal organic chemical vapor deposition on (0001) sapphire substrates. For producing active surfaces, argon-fast atom beam (FAB) sputtering source (acceleration voltage and current of 1.5 kV and 15 mA) was used. The background pressure in the bonding chamber was in the range of 4×10^<-4>-6×10^<-7> Pa. The samples were brought into contact as quickly as possible at room temperature after surface activation. GaN films were successfully bonded to GaAs substrates and polycrystalline Al rods without any heat treatment. Cross-sectional TEM of GaN/Al samples bonded at room temperature showed a nearly continuous amorphous thin interlayer with a thickness of about 10 nm at the interface. The die-shear strength of GaN/GaAs was in the range of 1.5 -7 MPa. The tensile strength of GaN/Al was in the range of 14-19 MPa. The results of I-V measurements showed that the n-GaN/Al junctions without annealing were rectifying, and became ohmic after annealing in N_2 at 600℃. The advantage of our process is free from the various problems caused by the large thermal expansion mismatch during heat treatment in the conventional fusion bonding.

通过表面活化键合方法在室温下实现了n型GaN与砷化镓（GaAs）和多晶Al的键合，并通过透射电子显微镜（TEM）研究了键合界面结的界面微观结构、键合强度和电学特性。、芯片剪切强度测试、拉伸强度测试和电流-电压 (I-V) 测量本实验中使用的硅掺杂 n 型 GaN 薄膜是通过金属有机化学气相生长的。在 (0001) 蓝宝石衬底上进行沉积，使用氩快原子束 (FAB) 溅射源（加速电压和电流为 1.5 kV 和 15 mA）。 4×10^<-4>-6×10^<-7>Pa。表面活化后，在室温下尽快使样品接触。在室温下粘合到 GaAs 衬底和多晶 Al 棒上的 GaN/Al 样品的横截面 TEM 显示出界面处厚度约为 10 nm 的几乎连续的非晶薄中间层。 GaN/GaAs的抗拉强度在1.5 -7 MPa范围内。I-V测量结果显示GaN/Al的抗拉强度在14-19 MPa范围内。未经退火的n-GaN/Al结已整流，并在600℃的N_2退火后变为欧姆性。我们的工艺的优点是没有传统熔焊过程中由于热处理过程中热膨胀失配大而引起的各种问题。。