Low temperature polycrystalline thin film transistors for next generation high performance display

用于下一代高性能显示器的低温多晶薄膜晶体管

• 批准号: 23360137
• 负责人: URAOKA Yukiharu
• 金额: $ 12.65万
• 依托单位: Nara Institute of Science and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360137/
• 关键词: 薄膜トランジスタ; レーザ結晶化; 無機EL; ディスプレイ; シリコン薄膜; プローブ顕微鏡; ホットキャリア; マイクロ波; レーザー照射; 水中レーザ; 結晶化; 結晶粒; 欠陥; 水素化; シリコン; レーザ照射; 多結晶シリコン; 硫化亜鉛; 高圧水蒸気処理

In this study, we proposed the fabrication of high performance thin film transistors (TFT) and inorganic electro luminescence panel. For the fabrication of TFTs, crystallization of Si thin film in water, inactivation of channel surface and activation of impurity were mainly performed. For the fabrication of inorganic EL, enhancement of light intensity by irradiation of micro wave and thinning of phosphor layer by atomization were mainly performed. In particular, local analysis of electronic property using probe microscope and hot carrier analysis using emission microscope were performed to improve the performance and reliability. Successfully we could demonstrate the panel operation on plastic substrate.

在这项研究中，我们提出了高性能薄膜晶体管（TFT）和无机电发光面板的制造。为了制造TFT，主要进行了Si薄膜在水中的结晶，通道表面失活和杂质的激活。为了制造无机EL，主要进行了通过微波照射和磷光层变薄来增强光强度的方法。特别是，使用探针显微镜和使用发射显微镜的热载体分析对电子特性进行了局部分析，以提高性能和可靠性。成功地，我们可以证明塑料基材上的面板操作。

项目成果

Polycrystalline Silicon Thin-Film Transistor Utilizing Self-Assembled Monolayer for Crystallization

利用自组装单层结晶的多晶硅薄膜晶体管

• 发表时间: 2013
• 期刊: Thin Solid Films
• 影响因子: 2.1
• 作者: Yosuke Tojo;Atsushi Miura;Yasuaki Ishikawa;Ichiro Yamashita and Yukiharu Uraoka
• 通讯作者: Ichiro Yamashita and Yukiharu Uraoka

保護膜を具備するはくトランジスタ基板およびその製造方法

具有保护膜的纤维晶体管基板及其制造方法

• 发表时间: 2014

Themal Distribution in Amorphous InSnZnO Thin-Film Transistor

非晶 InSnZnO 薄膜晶体管的热分布

• 作者: Satoshi Urakawa;Shigekazu Tomai;Yoshihiro Ueoka;Haruka Yamazaki;Masashi Kasami;Koki Yano;Dapeng Wang;Mamoru Furuta;Masahiro Horita;Yasuaki Ishikawa;and Yukiharu Uraoka
• 通讯作者: and Yukiharu Uraoka

Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation

• DOI: 10.1143/jjap.51.03ca01
• 发表时间: 2012-03
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: T. Nishida;Kazushi Fuse;M. Furuta;Y. Ishikawa;Y. Uraoka

Crystallization to Polycrystalline Silicon Thin Film and Simultaneous Inactivation of Electrical Defects by Underwater Laser Annealing

水下激光退火结晶成多晶硅薄膜并同时钝化电缺陷

• DOI: 10.1063/1.4772513
• 发表时间: 2012
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Emi Machida;et. al.
• 通讯作者: et. al.