Research of Bio-nano Display using Ferritin Protein

利用铁蛋白进行生物纳米显示的研究

基本信息

  • 批准号:
    17360164
  • 负责人:
  • 金额:
    $ 9.47万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2005
  • 资助国家:
    日本
  • 起止时间:
    2005 至 2006
  • 项目状态:
    已结题

项目摘要

Polycrystalline silicon (poly-Si) films fabricated on glass or plastic substrates have attracted much attention due to their applications in thin-film transistors (TFT) for flat-panel displays or future displays, such as a system-on-panel. In this study, we propose a new method utilizing biotechnology to obtain high-quality poly-Si thin films. As the nucleus of silicon crystallization, the Ni core of ferritin with a diameter of 7 nm was adsorbed on the surface of a-Si films by a bottom-up process. By adjusting the density of ferritin on the a-Si film, we controlled the Ni nucleus density and performed the solid-phase crystallization of the a-Si film.The a-Si film with a controlled crystal nucleus was heated up to 550℃in 10 min and then annealed for 25 h in N_2 ambient in an RTA furnace. Rapid heating suppresses the generation of a natural nucleus and poly-Si growth proceeds laterally from the controlled nucleus of NiSi_2. It is reported that the activation energies of Ni/a-Si → NiSi_2, … More a-Si → crystalline Si, and the generation of a natural nucleus are 1.45, 2.7, and 4.4eV, respectively. Therefore, it is estimated that the rapid heating and continuous annealing at 550℃ enhanced the reaction of NiSi_2 dominantly, thus the crystal growth of poly-Si proceeded.Furthermore, to examine grain size and crystalline orientation, EBSD analysis was performed. The "grains" were defined as the regions with the same crystallographic orientations and the same phases. Mapping images showed that definite grains were not observed at a density of 10^<11>cm^<-2>, therefore, the microcrystalline structure was dominant. For the film with a density of 10^<10>cm^<-2>, a mixture of grains and a microcrystalline structure was confirmed. However, for the film with a core density of 10^9cm^<-2>, definite grains were confirmed and their size was uniform. The orientations of the grains were random in all samples. The film without cores prepared as reference had no grains. The average grain sizes estimated from the size distribution, were 0.36 a m, 0.48 it m and 3.06 μm for the core densities of 10^<11>, 10^<10> and 10^9 cm^<-2>, respectively. Thus, grain size increased markedly with decreasing core density. Less
在玻璃或塑料底物上制造的多晶硅(Poly-SI)膜因其在薄膜晶体管(TFT)中用于平板显示器或将来的显示器(例如系统对板板)而引起了很多关注。在这项研究中,我们提出了一种利用生物技术来获得高质量的多SI薄膜的新方法。作为硅结晶的核,直径为7 nm的铁蛋白的Ni核通过自下而上的过程吸附在A-SI膜的表面上。通过调节A-SI膜上铁蛋白的密度,我们控制了Ni核密度并进行了A-SI膜的固相结晶。具有受控晶体核的A-SI膜在10分钟内加热至550°,然后在RTA Fellace的N_2 Ambient中25 h退火25 h。快速加热可抑制天然核的产生,而多-SI生长则是从NISI_2的受控核横向进行的。据报道,Ni/A-Si→Nisi_2的激活能分别为1.45、2.7和4.4EV,更多的A-Si→Crystalline Si分别为1.45、2.7和4.4EV。因此,据估计,在550处的快速加热和连续退火℃主要增强了NISI_2的反应,因此进行了多-SI的晶体生长。Furthermore进行了检查晶粒尺寸和结晶方向,EBSD分析进行了。 “谷物”定义为具有相同晶体学方向和相同相的区域。映射图像显示,在10^<11> cm^<-2>的密度下未观察到定义的晶粒,因此,微晶结构是主要的。对于密度为10^<10> cm^<-2>的膜,确认了晶粒和微晶结构的混合物。但是,对于核心密度为10^9cm^<-2>的膜,确认了定义的晶粒并且其大小均匀。在所有样品中,谷物的方向都是随机的。没有准备作为参考的核心的电影没有谷物。从尺寸分布中估计的平均晶粒尺寸为10^<11>,10^<10>和10^9 cm^<-2>的核心密度分别为0.36 a,0.48 IT和3.06μm。这,随着核心密度降低,晶粒尺寸显着增加。较少的

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Development of Low Temperature Poly-Si Thin Film Transistors for System on Panel
面板系统用低温多晶硅薄膜晶体管的开发
  • DOI:
  • 发表时间:
    2007
  • 期刊:
  • 影响因子:
    0
  • 作者:
    三浦健太;種村豪;花泉修;山本春也;高野勝昌;杉本雅樹;吉川正人;Yukiharu Uraoka
  • 通讯作者:
    Yukiharu Uraoka
Low-Temperature Crystalization of Amorphous Si Film Using Ferritin Protein with Ni Nano-Particles
利用铁蛋白和镍纳米颗粒低温结晶非晶硅薄膜
Low-Temperature Crystallization of Amorphous Si Films Using Ferritin Protein with Ni Nanoparticles
使用铁蛋白和镍纳米粒子低温结晶非晶硅薄膜
Enlargement of Grain size poly-Si suing Ferritin Protein with Ni Nano Particles
用镍纳米颗粒增大铁蛋白多晶硅的晶粒尺寸
Study of low-temerature crystallization of amorphous Si film
非晶硅薄膜低温晶化研究
  • DOI:
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    0
  • 作者:
    H.Kirimura;Y.Uraoka;T.Fuyuki;M.Okuda;I.Yamashita
  • 通讯作者:
    I.Yamashita
{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

URAOKA Yukiharu其他文献

URAOKA Yukiharu的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

{{ truncateString('URAOKA Yukiharu', 18)}}的其他基金

Highly reliable GaN power device fabricated using supercritical water
使用超临界水制造的高可靠性 GaN 功率器件
  • 批准号:
    16H04332
  • 财政年份:
    2016
  • 资助金额:
    $ 9.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Low temperature polycrystalline thin film transistors for next generation high performance display
用于下一代高性能显示器的低温多晶薄膜晶体管
  • 批准号:
    23360137
  • 财政年份:
    2011
  • 资助金额:
    $ 9.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Laser Crystallization of non two-dimensional Si substrates and their device application
非二维硅衬底激光晶化及其器件应用
  • 批准号:
    20246006
  • 财政年份:
    2008
  • 资助金额:
    $ 9.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Two dimensional crystallization of ferritin protein for nano-scale process in semiconductor fabrication
用于半导体制造纳米级工艺的铁蛋白二维结晶
  • 批准号:
    15360013
  • 财政年份:
    2003
  • 资助金额:
    $ 9.47万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)

相似国自然基金

基于氮化铝绝缘层的多晶铝-锡共掺杂氧化铟薄膜晶体管研究
  • 批准号:
    62304090
  • 批准年份:
    2023
  • 资助金额:
    30 万元
  • 项目类别:
    青年科学基金项目
基于氧化物薄膜晶体管的柔性反相器研究与探索
  • 批准号:
    62374073
  • 批准年份:
    2023
  • 资助金额:
    48.00 万元
  • 项目类别:
    面上项目
基于快速热退火的高迁移率非晶铟镓锌氧化物薄膜晶体管的研制及相关机制研究
  • 批准号:
    62371327
  • 批准年份:
    2023
  • 资助金额:
    49 万元
  • 项目类别:
    面上项目
多晶硅薄膜晶体管的静电放电应力可靠性研究
  • 批准号:
    62374110
  • 批准年份:
    2023
  • 资助金额:
    48 万元
  • 项目类别:
    面上项目
基于铜肖特基接触的高性能肖特基势垒金属氧化物薄膜晶体管的研究
  • 批准号:
    62304055
  • 批准年份:
    2023
  • 资助金额:
    30.00 万元
  • 项目类别:
    青年科学基金项目

相似海外基金

Fabrication of organic thin film transistor based biosensors
基于有机薄膜晶体管的生物传感器的制造
  • 批准号:
    574901-2022
  • 财政年份:
    2022
  • 资助金额:
    $ 9.47万
  • 项目类别:
    University Undergraduate Student Research Awards
A study on current modulation mechanism of surface-chemical-reaction associated thin film transistor under UV exposure
紫外照射下表面化学反应相关薄膜晶体管电流调制机制研究
  • 批准号:
    22K18787
  • 财政年份:
    2022
  • 资助金额:
    $ 9.47万
  • 项目类别:
    Grant-in-Aid for Challenging Research (Exploratory)
Development of selective and highly sensitive organic thin film transistor based bio sensors
开发基于选择性和高灵敏度有机薄膜晶体管的生物传感器
  • 批准号:
    RGPIN-2020-04079
  • 财政年份:
    2022
  • 资助金额:
    $ 9.47万
  • 项目类别:
    Discovery Grants Program - Individual
Low-Power, Low-Energy Thin-Film Transistor Displays with Energy Recycling Feature
具有能量回收功能的低功耗、低能耗薄膜晶体管显示器
  • 批准号:
    571983-2022
  • 财政年份:
    2022
  • 资助金额:
    $ 9.47万
  • 项目类别:
    Idea to Innovation
Development of selective and highly sensitive organic thin film transistor based bio sensors
开发基于选择性和高灵敏度有机薄膜晶体管的生物传感器
  • 批准号:
    RGPIN-2020-04079
  • 财政年份:
    2021
  • 资助金额:
    $ 9.47万
  • 项目类别:
    Discovery Grants Program - Individual
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了