Creation of the modulated facet structures of III-nitride semiconductors and development of the white LEDs with wide and continuous wavelength spectra

III族氮化物半导体调制面结构的创建以及具有宽且连续波长光谱的白光LED的开发

• 批准号: 21360007
• 负责人: HIRAMATSU Kazumasa
• 金额: $ 11.65万
• 依托单位: Mie University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21360007/
• 关键词: エピタキシャル成長; 選択成長; 非極性; 窒化物半導体; 発光ダイオード; MOVPE; m面; ファセット制御; 転位; 歪み; GaN; ファセット変調構造

In this study, in order to solve the fluctuation of the light emitting wave length and color rendering properties, the selective area growth on a plane GaN and the fabrication of the flat m-plane GaN are carried out aiming at the development of the white LED with continuous and wide wavelength range. By controlling growth temperature and growth pressure, the facet controlled structures can be fabricated. Also by using this technique, the flat m-plane GaN can be obtained. From these results, The development of the white LED with continuous and wide wavelength range can be realized.

本研究针对白光LED的发展，为了解决发光波长和显色性波动的问题，进行了平面GaN上的选择性区域生长以及平面m面GaN的制作。具有连续且宽的波长范围。通过控制生长温度和生长压力，可以制造刻面控制结构。通过使用该技术，也能够得到平坦的m面GaN。从这些结果来看，可以实现连续且宽波长范围的白光LED的开发。

项目成果

Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN

• DOI: 10.1143/apex.4.042103
• 发表时间: 2011-03
• 期刊: Applied Physics Express
• 影响因子: 2.3
• 作者: Yuki Shimahara;H. Miyake;K. Hiramatsu;F. Fukuyo;Tomoyuki Okada;Hidetsugu Takaoka;H. Yoshida

Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template

• DOI: 10.1016/j.jcrysgro.2009.01.022
• 发表时间: 2009-05-01
• 期刊: JOURNAL OF CRYSTAL GROWTH
• 影响因子: 1.8
• 作者: Katagiri, Yusuke;Kishino, Shinya;Hiramatu, Kazumasa
• 通讯作者: Hiramatu, Kazumasa

Control of AlN buffer/sapphire substrate interface for AlN growth

• DOI: 10.1002/pssc.201001186
• 发表时间: 2011-07
• 期刊: Physica Status Solidi (c)
• 作者: Reina Miyagawa;Shibo Yang;H. Miyake;K. Hiramatsu

Influence of carrier gas and growth temperature on MOVPE growth of AlN

载气和生长温度对AlN MOVPE生长的影响

• 发表时间: 2011
• 作者: Miyagawa;R; Yang;S; Miyake;H; Hiramatsu;K
• 通讯作者: K

HVPE growth of c-plane AlN on a-plane sapphire using high-temperature buffer layer

使用高温缓冲层在 a 面蓝宝石上 HVPE 生长 c 面 AlN

• 发表时间: 2010
• 作者: Y.Takagi;R.Miyagawa;H.Miyake;K.Hiramatsu
• 通讯作者: K.Hiramatsu