Defect Engineering in SiC and Application to Robust Devices with Ultrahigh Blocking Voltage

SiC 缺陷工程及其在具有超高阻断电压的鲁棒器件中的应用

• 批准号: 21226008
• 负责人: KIMOTO Tsunenobu
• 金额: $ 130.21万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (S)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009-05-11 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21226008/
• 关键词: 半導体; パワーデバイス; 結晶欠陥; キャリア寿命; 絶縁破壊; 炭化珪素; 深い準位; 拡張欠陥; 点欠陥; PiNダイオード; 接合終端

Defect electronics in SiC and ultrahigh-voltage SiC power devices have been studied toward efficient electric power conversion employed for future smart grids. Fast epitaxy of high-purity SiC was developed, and extended defects in SiC epitaxial layers were systematically characterized. Physical properties of the major deep levels were elucidated. The carrier-lifetime killer defects could be eliminated, leading to remarkably enhanced carrier lifetimes. Control of carrier lifetimes was also achieved. Original junction-termination structures were proposed to achieve ultrahigh blocking voltage with SiC, and breakdown mechanism of SiC devices was discussed. By utilizing thick, lightly-doped SiC epitaxial layers and the original device structures, ultrahigh-voltage (> 20 kV) PiN diodes and npn bipolar transistors were realized. The performance was significantly improved by enhancement of carrier lifetimes, and high-temperature operation of SiC devices was demonstrated.

已经研究了SIC和Ultrahigh Wevtage SIC电源设备中的缺陷电子设备，用于用于未来智能电网的有效电力转换。开发了高纯度SIC的快速外观，并系统地表征了SIC外延层中的扩展缺陷。主要深层的物理特性阐明了。可以消除少数载体杀手的缺陷，从而导致载体寿命明显增加。还实现了载体寿命的控制。提出了原始的连接终止结构，以实现用SIC实现超高阻断电压，并讨论了SIC设备的故障机理。通过利用厚，掺杂的SIC外延层和原始设备结构，实现了超高压（> 20 kV）的销钉和NPN双极晶体管。通过提高载体寿命，可以显着提高性能，并证明了SIC设备的高温操作。

项目成果

Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures

• DOI: 10.1109/ted.2012.2210044
• 发表时间: 2012-10-01
• 期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
• 影响因子: 3.1
• 作者: Niwa, Hiroki;Feng, Gan;Kimoto, Tsunenobu
• 通讯作者: Kimoto, Tsunenobu

Elimination of deep levels in thick SiC epilayers by thermal oxidation and proposal of the analytical model

通过热氧化消除厚 SiC 外延层中的深层能级并提出分析模型

• 发表时间: 2011
• 作者: K.Kawahara;J.Suda;T.Kimoto
• 通讯作者: T.Kimoto

Fast epitaxial growth and defect control of SiC toward ultra high-voltage power devices

超高压功率器件SiC的快速外延生长和缺陷控制

• 发表时间: 2011
• 作者: T.Kimoto;J.Suda;G.Feng
• 通讯作者: G.Feng

Fundamentals and frontiers of SiC power device technology

SiC功率器件技术基础与前沿

• 发表时间: 2013
• 作者: M.Yoshida;I.Kashiwamura;T.Hirooka;M.Nakazawa;T. Kimoto
• 通讯作者: T. Kimoto

Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation

• DOI: 10.7567/apex.6.121301
• 发表时间: 2013-11
• 期刊: Applied Physics Express
• 影响因子: 2.3
• 作者: T. Okuda;T. Kimoto;J. Suda