High-Voltage, High-Efficiency, High-Speed Power MOSFET Using Wide Bandgap Semiconductor SiC

使用宽禁带半导体 SiC 的高压、高效、高速功率 MOSFET

• 批准号: 13555094
• 负责人: KIMOTO Tsunenobu
• 金额: $ 6.59万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555094/
• 关键词: Silicon Carbide; Power Device; MOSFET; Oxide; Semiconductor Interface; Channel Mobility

Control of MOS interface, device processing, and fabrication of high-voltage MOSFETs have been investigated by using a wide bandgap semiconductor silicon carbide (SiC), which shows high breakdown field and other excellent physical properties. In control of MOS interface, thermal oxidation at high temperature resulted in the improvement of the MOS quality, and high channel mobilities of 78 cm^2/Vs and 22 cm^2/Vs were obtained for 6H-SiC(OOOl) and 4H-SiC(OOOl) MOSFETs, respectively. 4H-SiC(ll20) and (0338) MOSFETs exhibited a high channel mobility of 30-40 cm^2/Vs. In device processing, thick SiO_2 films deposited by plasma CVD could successfully used as an implantation mask. Short-channel MOSFETs with a channel length of 1 μm could be processed. The electrical activation of implanted dopants was significantly improved by increasing annealing temperature after implantation. The structure of lateral SiC MOSFETs with RESURF (Reduced Surface Field) structure was designed by using a 2D device simulation. The RESURF dose, depth, and the drift layer structure were optimized. SiC lateral RESURF MOSFETs were fabricated on 4H-SiC and 6H-SiC which were grown in our group. The MOSFET showed a very high breakdown voltage of 1 kV and a low on-resistance of 0.1 Ωcm^2. This characteristics outperforms the "Si limit" which is theoretically determined from the material properties, demonstrating the much potential of SiC power devices.

通过使用宽带隙半导体碳化硅（SIC），研究了MOS界面，设备加工和高压MOSFET的制造，该碳化合物（SIC）显示出高分解场和其他出色的物理特性。在控制MOS界面时，分别在6H-SIC（OOOL）和4H-SIC（OOOL）MOSFET中获得了高温下的热氧化可改善MOS质量，并获得78 cm^2/vs和22 cm^2/vs的高通道迁移率。 4H-SIC（LL20）和（0338）MOSFET暴露了30-40 cm^2/vs的高通道迁移率。在设备加工中，血浆CVD沉积的厚SIO_2膜可以成功用作植入面具。通道长度为1μm的短通道MOSFET可以处理。通过植入后的退火温度升高，植入掺杂剂的电激活显着改善。通过使用2D设备模拟设计了带有清浮（还原表面场）结构的侧向SIC MOSFET的结构。重新浮剂量，深度和漂移层结构被优化。 SIC侧向浮出水面MOSFET是在我们组种植的4H-SIC和6H-SIC上制造的。 MOSFET显示出非常高的击穿电压为1 kV，低电压为0.1ΩCM^2。该特征的表现优于“ SI极限”，该限制是从材料特性上确定的，这表明了SIC功率设备的潜力。

项目成果

T.Kimoto: "Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode"IEEE Transactions on Electron Devices. 49. 150-154 (2002)

T.Kimoto：“低损耗、高电压 6H-SiC 外延 p-i-n 二极管”IEEE Transactions on Electron Devices。

T. Kimoto: "Avalanche phenomena in 4H-SiC pn diodes fabricated by Al and B implantation"IEEE Transaction Electron Devices. Vol.49. 1505-1510 (2002)

T. Kimoto：“通过 Al 和 B 注入制造的 4H-SiC pn 二极管中的雪崩现象”IEEE Transaction Electron Devices。

T. Kimoto: "High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes"Journal of Applied Physics. Vol.91. 4242-4248 (2002)

T. Kimoto：“高能 (MeV) Al 和 B 离子注入 4H-SiC 和 pin 二极管的制造”应用物理学杂志。

T.Kimoto: "Chemical vapor deposition and deep level analyses of 4H-SiC(112^^-0)"Journal of Applied Physics. 89. 6105-6109 (2001)

T.Kimoto：“4H-SiC(112^^-0)的化学气相沉积和深层次分析”应用物理学杂志。

T.Kimoto: "High-voltage 4H-SiC Schottky barrier diodes fabricated on (0338) with closed micropipes"Japanese Journal Applied Physics. 42. L13-L16 (2003)

T.Kimoto：“在 (0338) 上制造的带有封闭微管的高压 4H-SiC 肖特基势垒二极管”《日本应用物理学杂志》。