ICP RIE Etching

ICP RIE 蚀刻

• 批准号: 536792788
• 金额: --
• 依托单位: Technische Universität Braunschweig
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2024
• 资助国家: 德国
• 起止时间: 2023-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/536792788?language=en
• 关键词: ICP; RIE; Etching

Chip processing of Si and GaN-based devices is one of the key unique competences of the Institute of Semiconductor Technology (IHT). This technology is of great importance for the fabrication of micro-opto-electro-mechanical systems and the research of novel sensor and actuator elements. For these objectives, the precise, reproducible processing of dielectrics, e.g. for lateral structuring of wafers or processing as integrated dielectrics for photonic modules, is of fundamental importance. Often the combination of high aspect ratio, high sidewall quality and precise nanostructure generation determines the requirement profile. Also for photonic systems, high aspect ratios as well as outstanding surface quality and structural fidelity are prerequisites for the fabrication of functional elements, which can only be achieved by ICP-RIE processes (inductively coupled plasma reactive ion etching).

基于SI和GAN的设备的芯片处理是半导体技术研究所（IHT）的关键独特能力之一。这项技术对于制造微型电机机械系统以及新型传感器和执行器元素的研究至关重要。对于这些目标，介电的精确，可重复的处理，例如对于晶片的横向结构或作为光子模块的综合介电的加工是至关重要的。通常，高纵横比，高侧壁质量和精确的纳米结构产生的组合决定了需求曲线。同样对于光子系统，高宽高比以及出色的表面质量和结构保真度是制造功能元件的先决条件，这只能通过ICP-RIE工艺（电感耦合等离子反应离子蚀刻）来实现。