Reflectance anisotropy spectroscopy (RAS) for III/V semiconductor crystal dry-etching (RIE) for in-situ identification of self-organized roughness (roughness-RIE-RAS)

用于 III/V 半导体晶体干法蚀刻 (RIE) 的反射各向异性光谱 (RAS)，用于原位识别自组织粗糙度 (roughness-RIE-RAS)

• 批准号: 423491951
• 负责人: Professor Dr. Henning Fouckhardt
• 金额: --
• 依托单位: Arbeitsgruppe Integrierte Optoelektronik und Mikrooptik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/423491951?language=en
• 关键词: Reflectance; anisotropy; spectroscopy; RAS; III

In certain parameter ranges maskless (maybe reactive) ion (beam) dry-etching (IE, IBE, RIE, RIBE) e.g. of semiconductor surfaces can result in characteristic morphologies like cones or wavelike features with typical characteristic lengths of 10-100 nm. The reason for these findings is self-organization. The characteristic structures are irregularly arranged on the surface, but lie dense in the plane. After a short etch time the morphologies stay stable and further on the surface is only etched as a whole.Reflection anisotropy spectroscopy (RAS) has already been developed to a powerful surface-sensitive optical measurement technique for the in-situ monitoring of epitaxial semiconductor growth. But in the applicant’s research group also already many successful attempts have been pursued to use RAS for the monitoring of dry-etch processes, so far mainly for etch parameters, which result in smooth etch fronts (so far to control etch-depth precisely), but rudimentarily also already in parameter ranges, where certain self-organized surface roughness morphologies evolve.Depending on device applications self-organized surface-structuring is disadvantageous or advantageous. Ideally its occurrence can be suppressed or promoted in real time during the etch process. RAS could provide for in-situ monitoring and control of the surface, allowing to make appropriate etch parameter changes. This is the main idea of this proposal.In particular investigations on the question are to be performed, whether and how RAS is suitable as an in-situ tool for identification and classification of these self-organized surface roughness morphologies.

在某些参数中，范围范围无掩模（也许是反应性）离子（梁）干蚀刻（即，ibe，rie，ribe），例如半导体表面的形态可能会导致特征性形态，例如锥形或波浪状特征，其特征长度为10-100 nm。这些发现的原因是自组织。特征结构不规则地排列在表面上，但在平面上呈密集。短暂蚀刻时间后，形态保持稳定，并且在整个表面上只蚀刻了表面。反射各向异性光谱（RAS）已经开发为强大的表面敏感的光学测量技术，用于对外延半导体生长的现场监测。但是，在申请人的研究小组中，已经采取了许多成功的尝试来使用RA进行干燥过程监控，到目前为止，主要用于蚀刻参数，这会导致蚀刻界面（到目前为止，可以精确地控制蚀刻范围），但在参数范围内也已经在某些自组织的表面上进行了构建，在某些自动化的表面范围内，这些效果是在某些自动化的范围内进行的。或有利。理想情况下，它的发生在蚀刻过程中可以实时抑制或促进。 RAS可以提供​​表面的原位监视和控制，从而使蚀刻参数更改。这是该提案的主要思想。特别是对这个问题进行的研究，是否以及如何作为识别和分类这些自组织的表面粗糙度形态的原位工具以及如何适合于现场。