The control of conductivity of bulk GaN crystals which are grown by Na flux method.

Na助熔剂法生长的块体GaN晶体的电导率控制。

• 批准号: 18360149
• 负责人: MORI Yusuke
• 金额: $ 10.55万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18360149/
• 关键词: GaN; Single crystal; Doping; Naフラックス; 高純度育成; 不純物ドーピング; バルク; 低転位

The elements of impurities and the origins of impurities were investigated to control conductivity of GaN which were grown by Na flux method. The major impurity incorporated into crystals was turned out to be oxygen. The oxygen concentration in LPE-GaN was ranged from the order of 10^<18> to 10^<19> cm^<-3>. The origin of oxygen was successive corrosion of alumina crucible in the growth period. We searched materials for the crucible which can tolerate Ga-Na mixed metal at high temperature and found the yttrium aluminum garnet (YAG) and yttria to be strong enough for that system. The oxygen concentration in LPE-GaN could be reduced to the order of 10^<16> cm^<-3> using yttria crucible. As for the p-type dopants, it was clarified that Mg element can be doped in the LPE-GaN with the order of 10^<20> cm^<-3>, which is the almost same concentration that adopted in the current devices. Mg doping enabled to increase in the conductivity to the order of 10^6 Ω・cm. On the other hand, Li and Ge could reduce the conductivity to the order of 10^<-2> Ω・cm.Also, even in the Li, Ge or Mg doped system, large bulk GaN single crystal could be obtained by co-doping of carbon which could significantly suppress the growth of poly-crystals.

研究了杂质的元素和杂质的起源，以控制通过Na通量方法生长的GAN的电导率。掺入晶体的主要杂质被证明是氧气。 LPE-GAN中的氧浓度范围从10^<18>的顺序到10^<19> cm^<-3>。氧气的起源是在生长期间成功腐蚀氧化铝坩埚。我们搜索了可以在高温下耐受Ga-na混合金属的坩埚，发现Yttrium铝石榴石（YAG）和YTTRIA足够强大。 LPE-GAN中的氧浓度可以使用Yttria crucible降低至10^<16> cm^<-3>的阶。至于p型掺杂剂，澄清的是，Mg元素可以在LPE-GAN中使用10^<20> cm^<-3>的顺序掺杂，这是当前设备中采用的几乎相同浓度。 Mg掺杂使电导率增加到10^6ΩCM的阶。另一方面，LI和GE可以将电导率降低到10^<-2>ωcm.cmm.sso的阶，即使在LI，GE或MG掺杂系统中，也可以通过共同掺杂碳的掺杂来获得大量的大量GAN单晶，从而可以显着抑制多结晶的生长。

项目成果

The Effect of Additive of Carbon into the Na Flux on the Growth of GaN Single Crystals

Na熔剂中添加碳对GaN单晶生长的影响

• 发表时间: 2007
• 作者: M. Tanpo;Y. Kitano;F. Kawamura;M. Yoshimura;Y. Kitaoka;Y. Mori;T. Sasaki
• 通讯作者: T. Sasaki

炭素添加Na fluxを用いた大型低転位GaN単結晶の育成

使用加碳Na助熔剂生长大型低位错GaN单晶

• 发表时间: 2007
• 作者: M. Tanpo;S. Katsuike;Y. Kitano;M. Imade;N. Miyoshi;F. Kawamura;M. Yoshimura;Y. Kitaoka;Y. Mori;T. Sasaki
• 通讯作者: T. Sasaki

Naフラックス法における成長速度向上に向けた取り組み

使用Na通量法提高生长速度的努力

• 发表时间: 2007
• 作者: F. Kawamura;Y. Kitano;M. Tanpo;M. Imade;M. Yoshimura;Y. Kitaoka;T. Sasaki;Y. Mori
• 通讯作者: Y. Mori

Some attempts for increasing the growth rate in the Na flux method

提高Na通量法生长速率的一些尝试

• 发表时间: 2007
• 作者: F.;Kawamura;Y.;Kitano;M.;Tanpo;M.;Imade;M.;Yoshimura;Y.;Kitaoka;T.;Sasaki;Y.;Mori
• 通讯作者: Mori

高純度環境でのNaフラックス法によるLPE-GaN単結晶育成

高纯度环境下使用Na助熔剂法生长LPE-GaN单晶

• 发表时间: 2007
• 作者: Y. Kitano;S. Katsuike;M. Tanpo;M. Imade;N. Miyoshi;F. Kawamura;M. Yoshimura;Y. Kitaoka;Y. Mori;T. Sasaki
• 通讯作者: T. Sasaki