Development of the growth technique of truly bulk GaN single crystals

真正块状GaN单晶生长技术的开发

• 批准号: 20360140
• 负责人: MORI Yusuke
• 金额: $ 12.4万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20360140/
• 关键词: 窒化ガリウム; Naフラックス法; 液相エピタキシャル; 溶液攪拌; GaN; Seeded Growth; 成長モード; 低転位化; 長時間成長; LPE; 対流シミュレーション; 窒化ガリウム; Naフラックス法; 液相エピタキシャル; 溶液攪拌; GaN; Seeded Growth; 成長モード; 低転位化; 長時間成長; LPE; 対流シミュレーション

The seeded growth of bulk GaN single crystals on a small GaN seed was performed by Na flux method. The addition of carbon into Ga/Na solution prevented the formation of polycrystals on a crucible wall, resulted in the promotion of GaN growth on a seed. Sr, Ba and Ca additives changed the growth habit from pyramidal shape to prism shape. In addition, the growth rate on a seed dramatically increased by stirring the solution. Using these techniques, the long-term growth of 600h enabled to obtain the prism-shaped bulk GaN single crystal (9.0mm width and 11mm height, with full widths at half maximum of GaN (10-11) X-ray rocking curve of 20~50 arcsec).

通过Na Flux方法进行了小gan种子上散装gan单晶的种子生长。将碳添加到GA/NA溶液中阻止了在坩埚壁上形成多晶的形成，从而促进了种子上的GAN生长。 SR，BA和CA添加剂将生长习惯从锥体形状变为棱镜形状。另外，种子上的生长速率通过搅拌溶液而大大增加。使用这些技术，600h的长期增长允许获得棱柱形的散装gan单晶（9.0mm宽度和11mm高，全宽度为最高的GAN（10-11）X射线摇动曲线为20〜50 ARCSEC）。