Research on single-crystal growth and carrier doping for high-temperature superconductors
高温超导体单晶生长及载流子掺杂研究
基本信息
- 批准号:14550002
- 负责人:
- 金额:$ 2.18万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2002
- 资助国家:日本
- 起止时间:2002 至 2004
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We have studied about two themes ; growth and control of superconducting whiskers in Bi-2212 phase and growth and characterization of high-quality and higher Tc superconductors in Bi-2201 phase.In the growth of whiskers, we obtained many results successfully. The distinguished results are as follows, (1)growth of high quality whiskers with our original powder-compaction method, (2)observed new second peak effect in Jc at high temperatures above 70 K, (3)area control growth of whiskers, and (4)growth of nanometer-size whiskers. These results will open the way for superconducting whiskers to be used in superconducting cables as fillers with high-quality superconducting elements and in superconducting wirings in nanometer scale electronic elements.In the other theme of growth control with higher Tc in Bi-2201 phase, we succeeded to obtain the superconductors with Tc higher than 40 K in single crystals by adopting a Pb and La co-doping method, which is almost new trial in this field. The highest Tc obtained in our study is 43.8 K in zero-resistance temperature, which is the world record ever obtained in Bi-2201 phase. The crystal structures are still orthorhombic but the modulation periods are elongated by three times compared to the undoped materials. As serendipity of the research, we observed the superconductivity with the onset temperature of about 80 K in Bi-2201 phase. The origin of the superconductivity is still under investigation now.
我们研究了两个主题。 BI-2212阶段中超导晶须的生长和控制,以及在BI-2201阶段的高质量和更高TC超导体的增长和表征。在晶须的生长中,我们成功地获得了许多结果。杰出的结果如下:(1)使用我们的原始粉末复合方法的高质量晶须的生长,(2)在高于70 K的高温下,JC在JC中观察到了新的第二峰效应,(3)晶须的面积控制生长,(4)纳米尺寸晶须的生长。 These results will open the way for superconducting whiskers to be used in superconducting cables as fillers with high-quality superconducting elements and in superconducting wirings in nanometer scale electronic elements.In the other theme of growth control with higher Tc in Bi-2201 phase, we succeeded to obtain the superconductors with Tc higher than 40 K in single crystals by adopting a Pb and La co-doping method, which is almost new在这个领域的试验。在我们的研究中获得的最高TC是零耐药温度的43.8 K,这是BI-2201阶段获得的世界记录。晶体结构仍然是矫形器,但与未掺杂的材料相比,调制周期的伸长率伸长了三倍。作为研究的偶然性,我们观察到在BI-2201阶段的一开始温度约为80 K的超导性。超导性的起源目前仍在研究中。
项目成果
期刊论文数量(17)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Magnetic properties of Bi-2201 phase single crystals
Bi-2201相单晶的磁性能
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:Amano;Tange;Nishizaki;Yoshizaki
- 通讯作者:Yoshizaki
Synthesis and properties of high quality Bi-2212 whiskers
高品质Bi-2212晶须的合成与性能
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:Tange;Amano;Nishizaki;Yoshizaki
- 通讯作者:Yoshizaki
池田 博: "酸化物蓄冷材の置換効果"低温工学. 37・8号. 416-419 (2002)
池田浩:“氧化物蓄热体材料的替代效果”,《低温工程》,37期,第8期。416-419(2002)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
S.Okayasu: "Irradiation effects on MgB2 bulk samples and formation of columnar defects in high-T c. superconductor"Physica C. 382. 104-107 (2002)
S.Okayasu:“辐照对 MgB2 块状样品的影响以及高温超导体中柱状缺陷的形成”Physica C. 382. 104-107 (2002)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Area control of Bi-2212 whiskers' formation
Bi-2212 晶须形成的区域控制
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:Tange;Amano;Yokoshima;Nishizaki;Yoshizaki
- 通讯作者:Yoshizaki
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YOSHIZAKI Ryozo其他文献
YOSHIZAKI Ryozo的其他文献
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{{ truncateString('YOSHIZAKI Ryozo', 18)}}的其他基金
Study on the newly discovered 80 K-class superconductivity in high-temperature cuprate superconductors
新发现的高温铜酸盐超导体80K级超导性能研究
- 批准号:
22540362 - 财政年份:2010
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
相似海外基金
Development of new oxide superconductors for materials of the MRI magnet wire
MRI磁线材料新型氧化物超导体的研制
- 批准号:
14580815 - 财政年份:2002
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
GROWTH OF Bi-2223 PHASE FROM TEXTURED Bi-2212 PHASE SOLIDIFIED IN HIGH MAGNETIC FIELDS
高磁场中固化的有织构 Bi-2212 相中 Bi-2223 相的生长
- 批准号:
13650799 - 财政年份:2001
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Low Temperature Film Growth of Epitaxial Bi High-Tc Superconducting Single Crystals by Ion Beam Assisted Ion Beam Sputtering
离子束辅助离子束溅射外延Bi高温超导单晶的低温成膜
- 批准号:
02805035 - 财政年份:1990
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)