Low Temperature Film Growth of Epitaxial Bi High-Tc Superconducting Single Crystals by Ion Beam Assisted Ion Beam Sputtering

离子束辅助离子束溅射外延Bi高温超导单晶的低温成膜

• 批准号: 02805035
• 负责人: ENDO Tamio
• 金额: $ 1.28万
• 依托单位: Mie University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02805035/
• 关键词: Preparation of high Tc superconducting thin films; 2212 phase of Bi system; Ion beam assist equipment; Ion beam sputtering equipment; Surface migration; Promotion of oxidation; Annealing; Transition temperature of 91 K; イオンビームアシスト; イオンビームスパッタ; B

I tried to prepare Bi high Tc superconducting thin films at low growth temperature by an ion beam assited ion beam sputtering. To attain this purpose, I made an equipment of thin film processing by the ion beam assisted ion beam sputtering. There arranged a sputter ion gun, an assist ion gun, a target holder and a substrate holder in a vacuum chamber. A nozzle of oxigen gas was set near the substrate. The films of BiSrCaCuO system were prepared, and dependences of film properties on the substrate temperature (Ts) and the oxygen patial pressure (P) were investigated. For P=1X10^<-4> Torr, Bi and Cu are poor in the films prepared at Ts=600-700 ﾟC and they are insulating at rt. For P=3X10^<-4> Torr, the films are conducting and have resistivity of 1-100 OMEGA cm. For P=3X10^<-4> Torr, when O+ assist ions are irradiated during the film growth, the films have the resistivity of several OMEGA cm and show XRD peaks of2201 phase. However, their composition is about 2212. The ion assisting has effects of a surface migration and a strong oxidation which suppres evaporation of Bi and facilitate to form crystal structure. When the films prepared by the assisting are annealed at 800 ﾟC , they show XRD peaks of 2201 and 2212 phases and show superconducting transition. The onset temperature is 91 K for the film for Ts=700 ﾟC . The same annealing effect is not observed for the films without the assisting. Therefore, the potential effect of the ion assisting on crystal growth is clarified.

我试图通过分配的离子束溅射在低生长温度下在低生长温度下制备BI高TC超导薄膜。为了实现此目的，我通过离子束辅助离子束溅射制作了薄膜处理的设备。在那里安排了一把溅射离子枪，辅助离子枪，目标持有者和一个真空室中的基板持有者。底物附近设置了氧化气喷嘴。制备了Bisrcacuo系统的膜，并研究了膜性能对底物温度（TS）和氧气pat骨压力（P）的依赖性。对于p = 1x10^<-4> torr，在TS = 600-700 c制备的膜中，Bi和Cu很差，并且它们在RT下进行绝缘。对于p = 3x10^<-4>托尔，膜进行了，并且具有1-100欧米茄CM的电阻。对于p = 3x10^<-4>托尔，当膜增长过程中O+辅助离子被照射时，膜具有几个欧米茄CM的电阻，并且显示了2201期的XRD峰。但是，它们的组成约为2212。离子辅助具有表面迁移和强氧化的作用，可以补充BI的经济并促进形成晶体结构。当通过辅助制备的胶片在800°C退火时，它们显示2201和2212阶段的XRD峰，并显示超导过渡。对于TS = 700 c的薄膜的开始温度为91 K。如果没有辅助，则不会观察到相同的退火效果。因此，阐明了离子辅助晶体生长的潜在影响。