Mesoscopic-scale dynamics of materials fracture and workability of silicon crystals

材料断裂的细观动力学和硅晶体的可加工性

基本信息

批准号：
16360316
负责人：
HIGASHIDA Kenji
金额：
$ 7.04万
依托单位：
KYUSHU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2005
项目状态：
已结题

项目摘要

Mesoscopic-scale dynamics of materials fracture have been investigated based on the theory of crack-dislocation interaction. Particular attention has been paid on fracture and deformation behaviors in silicon single crystals.Since silicon single crystals exhibit a sharp transition from brittle-to-ductile behavior in the narrow temperature range, they have attracted much attention as model crystals to understand the dislocation process for toughening crystalline materials. In this research, the nature of crack tip dislocations and their multiplication processes in silicon crystals have been examined by using high-voltage electron microscopy. The crack tip dislocations observed were characterized by matching their images to those simulated, and it was found that they were shielding type which increases fracture toughness of materials. In addition to this, three-point bending tests were made at high temperatures around 1100K in order to introduce dislocations around a crack tip. And crack … More tip stress fields were visualized by infrared photoelastic method in those silicon crystals deformed at high temperatures. By using this method, it was confirmed that the compressive stress field was formed around the crack tip by the introduction of dislocations, and that the compressive stress fields substantially increases the fracture toughness of silicon crystals. Further, the dislocation distribution was simulated by using the program code developed by Dr. Hartmaier, MPI, and the simulated photoelastic images using the calculated dislocation distribution were in good agreement with the observed images.From the viewpoint of the research on the workability of silicon crystals, the effects of impurity and strain rate on the behavior of brittle-to-ductile transition was investigated. In this study, boron was added, which caused the increase of brittle-to-ductile transition temperature (BDTT). Based on the results of strain rate dependence of BDTT, activation energy for brittle-to-ductile transition was estimated, and the value estimated coincided well with the value of the activation energy of dislocation glide. Those results suggest that the problem of brittle-to-ductile transition and workability of silicon crystals are fundamentally discussed based on the theory of dislocation motion and the interaction between crack and dislocations. Less

材料骨折的介质尺度是根据裂纹相互作用的理论进行了审查的。晶体在此研究中了解晶体的脱位，以固定晶体的性质。这些模拟类型增加了材料的断裂韧性。使用该方法在高温下变形。由Hartmail博士开发的，使用计算出的位错分布的模拟光紫色与观察到的图像进行了刺激。加上脆性温度（BDTT）的增加，估计了脆性旋转的离子能量。 - 基于脱位运动和裂纹和脱位之间的相互作用，对硅tal的延性进行了根本讨论。

项目成果

期刊论文数量（6）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Fracture Toughness Evaluated by Indentation Methods and Its Relation to Surface Energy in Silicon Single Crystals

DOI：
10.2320/matertrans.44.681
发表时间：
2003-04
期刊：
Materials Transactions
影响因子：
1.2
作者：
Masaki Tanaka;K. Higashida;H. Nakashima;H. Takagi;M. Fujiwara
通讯作者：
Masaki Tanaka;K. Higashida;H. Nakashima;H. Takagi;M. Fujiwara

3D Structures of Crack-Tip Dislocations in Silicon Revealed by HVEM

HVEM 显示硅中裂纹尖端位错的 3D 结构

DOI：
发表时间：
2004
期刊：
Proceedings of the 25th Risoe International Symposium on Materials Science : Evolotion of Deformation Microstructures in 3D, Editors : C. Gundlach et. al., Risoe National Laboratory, Roskide, Denmar
影响因子：
0
作者：
K.Higashida;M.Tanaka
通讯作者：
M.Tanaka

Microstructure of plastic zones around crack tips in silicon revealed by HVEM and AFM

DOI：
10.1016/j.msea.2004.05.040
发表时间：
2004-12
期刊：
Materials Science and Engineering A-structural Materials Properties Microstructure and Processing
影响因子：
6.4
作者：
Masaki Tanaka;K. Higashida;Tomoko Haraguchi
通讯作者：
Masaki Tanaka;K. Higashida;Tomoko Haraguchi

シリコン結晶における破壊靱性値の方位依存性と表面エネルギー

硅晶体断裂韧性和表面能的取向依赖性