Development of in-sutu observation system for internal stress fields due to lattice defects using the infrared photoelastic method

利用红外光弹法开发晶格缺陷引起的内应力场原位观测系统

• 批准号: 11555162
• 负责人: HIGASHIDA Kenji
• 金额: $ 1.02万
• 依托单位: KYUSHU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555162/
• 关键词: dislocation; crack; lattice defect; photoelasticity; infrared; silicon

In order to develop high quality silicon wafer with large diameter, it is essential to control lattice defects such as dislocations in those wafers. Polycrystalline silicon has also received much attention recently, but it is inevitable to improve its mechanical property for developing their practical use. In order to investigate such mechanical property and lattice defects of silicon crystals, it is very useful to make direct observation of internal stress fields caused by those crystal defects in crystals.The essential point in the present research project is to develop the in-sutu observation system for internal stress fields due to lattice defects by using the infrared photoelastic method. By using this system, we made in-situ obaervation of crack tip stress fields developed around a crack tip in compact tension specimen of silicon crystals. The simulation of photoelastic images has been also made, and we have obtained a good agreement with those experimentally observed. In addition, in this research project, we observed the detailed configurations of dislocations generated around a crack tip in silicon thin crystals, which is essential not only to understand the toughness of silicon wafer, but also to study the physical meaning of the photoelastic images obtained by the present system.

为了开发直径较高的高质量硅晶片，控制晶格缺陷，例如这些晶片中的位错。多晶硅最近也受到了很多关注，但是不可避免地要改善其开发实际使用的机械性能。为了研究硅晶体的这种机械性能和晶格缺陷，直接观察由晶体中这些晶体缺陷引起的内部应力场非常有用。本研究项目的重要点是开发距离观察通过使用红外光弹性方法，由于晶格缺陷引起的内部应力场系统。通过使用该系统，我们对裂纹尖端应力场的原位遵守在紧凑型硅晶体的紧张标本中形成裂纹尖端应力场。还进行了光弹性图像的仿真，我们与实验观察到的那些人达成了良好的一致性。此外，在该研究项目中，我们观察了硅薄晶体周围产生的位错的详细配置，这不仅对于了解硅晶片的韧性至关重要，而且还必须研究获得的光弹性图像的物理含义。通过当前系统。

项目成果

K.Higashida, T.Kawamura, T.Morikawa, 他: "HVEM observation of crack tip dislocations in silicon crystals"Materials Science and Engineering A. - (2001)

K.Higashida、T.Kawamura、T.Morikawa 等：“硅晶体中裂纹尖端位错的 HVEM 观察”材料科学与工程 A. - (2001)

K.Higashida: "HVEM/AFM observation of a crack tip in silicon crystals"Materia. Vol.39. 980 (2000)

K.Higashida：“硅晶体裂纹尖端的 ​​HVEM/AFM 观察”材料。

東田賢二: "Si結晶中の亀裂先端近傍のHVEM/AFM観察"まてりあ. 第39巻. 980- (2000)

Kenji Higashida：“Si 晶体裂纹尖端附近的 HVEM/AFM 观察”Materia 39. 980- (2000)。

K.Higashida, T.Kawamura, T.Morikawa, Y.Miura, N.Narita and R.Onodera: "HVEM observation of crack tip dislocations in silicon crystals"Materials Science and Engineering A. (2001)

K.Higashida、T.Kawamura、T.Morikawa、Y.Miura、N.Narita 和 R.Onodera：“硅晶体中裂纹尖端位错的 HVEM 观察”材料科学与工程 A. (2001)