Microstructure of Crack Tip Plastic Zone and Fracture Toughness In Silicon Crystals
硅晶体裂纹尖端塑性区的微观结构与断裂韧性
基本信息
- 批准号:14550656
- 负责人:
- 金额:$ 2.3万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2002
- 资助国家:日本
- 起止时间:2002 至 2003
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In order to understand the dislocation process In the plastic zone and its relation to the fracture toughness In silicon crystals, microstructures of plastic zones around crack tips have been investigated using high voltage electron microscopy (HVEM) and atomic force microscopy (AFM). Cracks were Introduced Into (110) silicon wafers at room temperature by Vickers indentation method. The temperature of specimens indented was raised to higher than 823K to activate dislocation sources around a crack tip under the presence of residual stress due to the indentation. AFM study has revealed two types of fine slip bands : one type Is slip bands oblique to the direction of crack propagation, I.e., <110>, and another type is those parallel to this <110> direction. The former is corresponding to a hinge-type plastic zone, and the later is so-called 45゜-shear-type. HVEM study has also revealed the characteristic of dislocation structures developed in the both types of plastic zones. The correspond … More ence between AFM and HVEM results is verified, and the characteristics found in the both plastic zones are discussed. In addition to the HVEM and AFM studies, stress fields around a crack tip in silicon crystals have been investigated by using infrared photoelasticity with the aim of clarifying the shielding effect due to crack tip dislocations on the steep increase of fracture toughness in the brittle-to-ductile transition (BDT). first, compact tension tests were carried out at room temperature to make in-situ observation of elastic behavior of crack tip stress fields. The photoelastic images observed were In good agreement with those simulated for the usual elastic fields around the tip of a mode I crack. Next, to clarify the stress modification due to crack tip plasticity, three point bending tests were also made by using notched specimens at high temperatures around 1000K. After the high temperature test, in spite of the absence of the applied load, residual bright images were observed around the notch. Those images correspond to an internal stress due to dislocations multiplied around the notch, and they have an effect of shielding (accommodating) the stress concentration due to the applied load. The fracture toughness at room temperature was increased by the introduction of the residual stress. Less
为了了解塑料区域中的位错过程及其与硅晶体中骨折韧性的关系,已经使用高压电子显微镜(HVEM)和原子力显微镜(AFM)研究了裂纹尖端周围塑料带的微观结构引入(110)23K以激活裂缝尖端的脱位源前者与铰链型塑料区相关,后来的是所谓的45゜-HVEM研究,也揭示了ASTIC区的炭攻击。两个塑料区域都讨论了HVEM,并通过使用红外光弹进行研究,目的是裂纹尖端脱位对脆性转变(BDT)中裂缝韧性的急剧增加室温进行了室温,以对观察到的裂纹尖端应力场的弹性行为与模拟的尖端I裂开的弹性图像非常吻合。在高温测试后的高温下,尽管有施加的载荷,但在缺口周围观察到残留的明亮图像。通过少量应力提高室温下的骨折韧性。
项目成果
期刊论文数量(11)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
田中將己, 東田賢二: "シリコン結晶中のき裂先端塑性域の初期転位構造と破壊靱性"日本機械学会論文集(A編). 68. 1505-1512 (2002)
Masami Tanaka、Kenji Higashida:“硅晶体裂纹尖端塑性区域的初始位错结构和断裂韧性”日本机械工程师学会会议记录(ed. A)68. 1505-1512(2002)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
M.Tanaka et al.: "Fracture Toughness Evaluated by Indentation Methods and Its Relation to Surface Energy in Silicon Single Crystals"Materials Transactions. Vol.44, No.9. 681-684 (2003)
M.Tanaka 等人:“通过压痕方法评估的断裂韧性及其与硅单晶表面能的关系”Materials Transactions。
- DOI:
- 发表时间:
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- 影响因子:0
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M.Tanaka, K.Higashida, H.Nakashima, H.Takagi, M.Fujiwara: "Fracture Toughness Evaluated by Indentation Methods and Its Relation to Surface Energy in Silicon Single Crystals"Materials Transactions. Vol.44. 681-684 (2003)
M.Tanaka、K.Higashida、H.Nakashima、H.Takagi、M.Fujiwara:“通过压痕方法评估的断裂韧性及其与硅单晶表面能的关系”材料交易。
- DOI:
- 发表时间:
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- 影响因子:0
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- 通讯作者:
M.Tanaka, K.Higashida, T.Kishikawa, T.Morikawa: "HVEM/AFM Observation of Hinge-Type Plastic Zones Associated with Cracks in Silicon Crystals"Materials Transactions. Vol.43, No.9. 2169-2172 (2002)
M.Tanaka、K.Higashida、T.Kishikawa、T.Morikawa:“与硅晶体裂纹相关的铰链型塑性区的 HVEM/AFM 观察”材料交易。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
M.Tanaka, K.Higashida: "Dislocation Configurations near a Crack Tip and Its Influence on the Fracture Toughness in Silicon Crystals"Transaction of Japan Society of Mecanical Engineers. Vol.68. 1505-1512 (2002)
M.Tanaka、K.Higashida:“裂纹尖端附近的位错构型及其对硅晶体断裂韧性的影响”日本机械工程师学会会刊。
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- 影响因子:0
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HIGASHIDA Kenji其他文献
HIGASHIDA Kenji的其他文献
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{{ truncateString('HIGASHIDA Kenji', 18)}}的其他基金
Structure analysis of lattice defects in near bulk specimens combining high-voltage electron microscopy and electron energy loss spectroscopy.
结合高压电子显微镜和电子能量损失光谱对近块体样品中的晶格缺陷进行结构分析。
- 批准号:
22246090 - 财政年份:2010
- 资助金额:
$ 2.3万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
3-D analyses for crack tip dislocations by using electron tomography
使用电子断层扫描进行裂纹尖端位错的 3D 分析
- 批准号:
18360305 - 财政年份:2006
- 资助金额:
$ 2.3万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Mesoscopic-scale dynamics of materials fracture and workability of silicon crystals
材料断裂的细观动力学和硅晶体的可加工性
- 批准号:
16360316 - 财政年份:2004
- 资助金额:
$ 2.3万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
TEM analysis for meso-scale textures developed in heavily deformed Fe-alloys
严重变形铁合金细观织构的 TEM 分析
- 批准号:
12650662 - 财政年份:2000
- 资助金额:
$ 2.3万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of in-sutu observation system for internal stress fields due to lattice defects using the infrared photoelastic method
利用红外光弹法开发晶格缺陷引起的内应力场原位观测系统
- 批准号:
11555162 - 财政年份:1999
- 资助金额:
$ 2.3万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Study on the dislocation emission around a crack tip by using high-voltage electron microscopy
裂纹尖端周围位错发射的高压电子显微镜研究
- 批准号:
10650651 - 财政年份:1998
- 资助金额:
$ 2.3万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Visualization of crack-grain boundary interaction in transparent crystals
透明晶体中裂纹与晶界相互作用的可视化
- 批准号:
08650770 - 财政年份:1996
- 资助金额:
$ 2.3万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
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