Fluoride/Oxide Super Hetero-nanostructures for Advanced Photonic Devices

用于先进光子器件的氟化物/氧化物超异质纳米结构

基本信息

批准号：
13650336
负责人：
WATANABE Masahiro
金额：
$ 1.98万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650336/
关键词：
Zinc oxide Calcium fluoride epitaxial growth Ultra violet photoluminescence current injection luminescence nanocrystal photonic material 紫外発光アクセプタ

项目摘要

The purpose of this study is to demonstrate ultra violet (UV) light emission from nanometer size crystals of wide gap semiconductors such as zinc oxide (ZnO), or BeZnSe formed in single crystalline calcium fluoride (CaF_2), which is a wide band gap ionic material epitaxially grown on silicon substrate. Using the heterostructures, UV emitting devices based on tunneling injection through CaF_2 quantum barriers can be expected. And moreover, strong quantum confinement can be utilized due to large conduction band discontinuity at the heterointerface, which leads fascinating changes of electron-photon interaction from the bulk material.Results obtained in this study are as follows.1. Formation technique of nanocrystalline zinc oxide (ZnO) on CaF_2/Si(111) substrate has been developed using RF sputtering followed by regrowth of CaF_2 by molecular beam epitaxy. Growth temperature, background pressure, RF power and post annealing condition was optimized.2. Ultra-violet photoluminescence at wav … More elength of 380 nm and electroluminescence was observed at room temperature. Transmission electron microscopy (TEM) lattice image clearly confirmed that sharp heterointerface of CaF_2/ZnO/CaF_2 was formed. Growth condition was optimized by luminescence intensity and surface morphology.3. Thermal annealing process in oxygen or ultra-high vacuum was introduced for improving luminescence intensity. Dependence of luminescence on annealing temperature, time, pressure was clarified.4. Current injection luminescence was demonstrated using tunneling injection structure with transparent conducting ITO electrode fabricated using photolithography and dry etching. UV luminescence was clearly observed at room temperature and the luminescence was stable. From this result, nanocrystalline ZnO embedded in single crystalline CaF_2 has stable heterointerface, which is attractive for UV photonic materials on silicon substrate.5. UV emission from BeZnSe grown on CaF_2/Si(111) has been demonstrated for the first time. The advantage of this material system is lattice matched with silicon substrate. Less

本研究的目的是证明宽带隙半导体纳米尺寸晶体的紫外 (UV) 发射，例如氧化锌 (ZnO) 或在单晶氟化钙 (CaF_2) 中形成的 BeZnSe，氟化钙是一种宽带隙离子利用在硅衬底上外延生长的材料，可以预期基于CaF_2量子势垒的隧道注入的紫外发射器件，并且由于可以利用强量子限制。异质界面处的大导带不连续性，导致体材料电子-光子相互作用发生令人着迷的变化。本研究取得的结果如下： 1．CaF_2/Si(111)纳米晶氧化锌(ZnO)的形成技术。使用射频溅射开发衬底，然后通过分子束外延生长 CaF_2，生长温度、背景压力、射频功率和后退火条件。 2. 波长为380 nm的紫外光致发光和室温下观察到的电致发光晶格图像证实了CaF_2/ZnO/CaF_2的清晰异质界面的形成。 3．采用氧气或超高真空中的热退火工艺来改善发光强度的依赖性。阐明了退火温度、时间、压力的影响。4．采用光刻和干法刻蚀制作的透明导电ITO电极的隧道注入结构，在室温下可以清晰地观察到紫外发光，并且发光稳定。嵌入单晶CaF_2中的纳米晶ZnO具有稳定的异质界面，这对于硅衬底上生长的BeZnSe紫外光子材料具有吸引力。 5．首次证明了CaF_2/Si(111)材料体系与硅衬底晶格匹配较少的优点。

项目成果

期刊论文数量（12）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Y. Niiyama, T. Maruyama, N. Nakamura, and M. Watanabe: "Room Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001)"Jpn. J. Appl. Phys.. 41[7A]. L751-L753 (2002)

Y. Niiyama、T. Maruyama、N. Nakamura 和 M. Watanabe：“GaP(001) 上 BeZnSe 的室温紫外光致发光”Jpn。

DOI：
发表时间：
期刊：
影响因子：
0
作者：
通讯作者：

渡辺正裕, 石川達也, 松田克己, 金澤徹, 浅田雅洋: "ナノ領域成長によるSi(111)及びSi(100)基板上CdF_2/CaF_2共鳴トンネルダイオード"信学技報. ED2001-242. 65-70 (2002)

Masahiro Watanabe、Tatsuya Ishikawa、Katsumi Matsuda、Toru Kanazawa、Masahiro Asada：“通过纳米域生长在 Si(111) 和 Si(100) 衬底上制造 CdF_2/CaF_2 谐振隧道二极管” ED2001-242。 (2002)