Fabrication of Super-Heterostructures for Advanced Optoelectronic Quantum Devices

先进光电量子器件的超异质结构制造

基本信息

批准号：
15360159
负责人：
WATANABE Masahiro
金额：
$ 9.28万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

项目摘要

New type of light emitting devices or electron devices for future LSI technology using Super-heterostructures are studied. Intersubband quantum cascade lasers using CdF_2-CaF_2 heterostructures have been proposed and novel crystal growth technique Nanoarea-Local-Epitaxy has been demonstrated. Energy subbands in the quantum wells has been confirmed using resonant tunneling diode with double- and triple-barrier structures. And moreover, spontaneous emission from CdF_2-CaF_2 single cascade structures has been observed for the first time.Results obtained in this research are as follows.(1) Near-infrared electroluminescence from a single-period (CdF_2/CaF_2) inter-subband quantum cascade structure on a Si substrate has been observed for the first time. The CdF_2/CaF_2 heterostructure is a good candidate for realizing a Si-based short-wavelength quantum cascade laser because of its large conduction band discontinuity of 2.9 eV and small lattice mismatch with the Si substrate. In the experiment, an active region consisting of (CdF_2/CaF_2) heterostructures was grown epitaxially on the Si substrate by molecular beam epitaxy, and an Au/Al electrode was evaporated on the active region. The wafer was polished mechanically and cleaved. Electroluminescence from the device was observed in the near-infrared region at room temperature for the first time.(2) Epitaxial growth of high-quality CdF_2/CaF_2 heterostructures on Si(100) substrate has been demonstrated using Nanoarea-Local-Growth and in-situ post-annealing for solid phase epitaxy. Using this method, room temperature high peak to valley current ratio (>10^5) of CdF_2/CdF_2 resonant tunneling diode structures has been demonstrated on Si(100) substrate for the first time.

研究了新型的发射设备或用于未来LSI技术使用超型型结构的电子设备。已经提出了使用CDF_2-CAF_2异质结构的子带量子级联激光器，并已证明了新型的晶体生长技术纳米区域epitaxy。量子井中的能量子带已使用带有双重和三个屏障结构的谐振隧道二极管证实。此外，首次观察到来自CDF_2-CAF_2的自发发射。（1）从单周期（CDF_2/CAF_2）中获得的近红外电致发光如下。首次观察到SI底物上的级联结构。 CDF_2/CAF_2异质结构是实现基于SI的短波量子级联激光器的良好候选者，因为其大型传导带不连续2.9 eV和与SI基板的小晶格不匹配。在实验中，由分子束外延在SI底物上分别生长了由（CDF_2/CAF_2）组成的活性区域，并在活性区域蒸发了Au/Al电极。晶圆被机械抛光并裂解。首次在室温下在近红外区域观察到来自设备的电致发光。（2）使用纳米核心 - 局部生长和在SI（100）底物上的高质量CDF_2/CAF_2异质结构的外在均匀生长 - 固相外延后的静止后。使用此方法，首次在SI（100）基板上证明了CDF_2/CDF_2共振隧道二极管结构的室温高峰与谷地电流比（> 10^5）。