Low Temperature Deposition of TiN Diffusion Barrier Metal for Integrated Circuit by Low Frequency Plasma CVD

低频等离子体CVD低温沉积集成电路用TiN扩散势垒金属

基本信息

批准号：
10650298
负责人：
SHIMOZUMA Mitsuo
金额：
$ 2.05万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650298/
关键词：
TiN plasma CVD thin film deposition low frequency plasma low frequency plasnra CVD diffusion barrier material thin film low temperature deposition integrated circuit material 薄膜低温形成

项目摘要

Titanium nitride (TiN) films have been used in the fabrication of integrated circuits as a diffusion barrier layer metal. Usually, TiN films are produced by deposition with thermal chemical vapor deposition (CVD), plasma CVD and physical vapor deposition or plasma spraying methods. However, these methods require high-temperature (>600℃) substrates to achieve the depositions, which sometimes causes thermal damage to the deposited films. At temperatures above 550℃, thermal diffusion of materials not suitable for semiconductor devices may also occur. Therefore, it is desirable to develop a deposition technique for TiN films using low-temperature (<550℃) substrates to avoid thermal damage. In our previous work, TiN films have been deposited on silicon substrates at low substrate temperature (TィイD2subィエD2) (400℃-550℃) by 50Hz plasma CVD using a TiClィイD24ィエD2+NィイD22ィエD2+HィイD22ィエD2 gas mixture. A substrate bias circuit with two diodes was used to enhance the deposition through ion processes. The Vickers hardness values of the deposited TiN films at TィイD2subィエD2 ranging from 450 to 550℃ were above 2200Hv, and resistively was below 100 μ Ωcm TィイD2subィエD2>500℃. The composition of the deposited films was investigated by the RBS method to determine that the at.% value of the Cl content in the TiN films is about 1% at TィイD2subィエD2=550℃ . XRD spetra revealed that the film has the preferred orientation ofδ -TiN with (200) and (220) under the deposition condition of TィイD2subィエD2>500℃. From these results, it was found that high quality and uniform TiN film was obtained on three-dimensional substrate surface by the 50Hz plasma CVD with a bias circuit using two diodes.

氮化钛（TIN）膜已用于制造集成电路作为扩散屏障层金属。通常，用热化学蒸气沉积（CVD），等离子体CVD和物理蒸气沉积或血浆喷涂方法产生锡膜。但是，这些方法需要高温（> 600℃）底物才能实现沉积，这有时会对沉积膜造成热损害。在高于550℃的温度下，可能还会发生不适合半导体设备的材料的热扩散。因此，希望使用低温（<550℃）底物为锡膜开发一种沉积技术，以避免热损伤。在我们先前的工作中，使用TICL D24E D2+NII D22E D2+HII D2+HII D2 D2 D2气体混合物，50Hz等离子体CVD已在低基材温度（TII D2SUBIE D2）（400 d2subie D2）（400 d2subie d2）（400 d2subie d2）（400℃-550℃）上沉积TIN膜。使用两个语音的底物偏置电路通过离子过程来增强沉积。 Tyn D2Subie D2在TYN膜上的锡膜的Vickers硬度值范围从450到550℃高于2200hv，电阻低于100μCMTyn d2subie d2subie d2> 500> 500。通过RBS方法研究了沉积膜的组成，以确定锡膜中Cl含量的AT。％值约为1％，在TIN D2 = 550℃tin d2subie d2 = 550℃时约为1％。 XRD Spetra表明，在TIN D2Subie D2> 500℃的沉积条件下，该膜具有δ -TIN的优选方向。从这些结果中可以发现，使用两个二极管的50Hz等离子体CVD在三维底物表面上获得了高质量和均匀的锡膜。