Development of Thin Film Radiation Detectors using TiO_2 film by plasma CVD method

等离子体CVD法研制TiO_2薄膜辐射探测器

基本信息

批准号：
15560267
负责人：
SHIMOZUMA Mitsuo
金额：
$ 2.37万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560267/
关键词：
Small size Radiation Detector TiO_2 Ceramics Structure SiC Alumina Structure Thin Film Radiation Detector Plasma CVD Plasma Processing 放射線センサー薄膜センサー TiO_2薄膜プラズマCVD TiO_2膜紫外線センサー生体適用放射線センサー

项目摘要

The TiO_2 film have been deposited on alumina substrate by the 50Hz plasma-enhanced CVD at 600℃ using TiCl_4+O_2 gas mixture with a substrate bias circuit using two diodes. Substrate bias voltage was -50(V), and the gas mixture ratio (TiO_2/O_2) was 0.05. The refractive index, dielectric constant and optical energy gap were about 2.7, 120 and 3.0, respectively.Thin film Radiation detector was made by TiO_2/alumina structure. TiO_2 on alumina plate (1mm in thickness) was deposited 100(nm) to 1(μm) in thickness by the plasma CVD. It seems that thickness of TiO_2 influence upon detector S/N characters. Detector dark current at TiO_2 thickness 200(nm) of TiO_2/alumina structure by 10(V) applied voltage was few tens pA, 1(μm) thickness TiO_2/alumina was few nA current. Therefore, I think so that the thickness of TiO_2 is better than less about 100(nm). Gold thin film two electrodes were set on TiO_2/alumina structure, and add 1 to 100(V) between two electrodes. The film detector was irradiated γ-ray and X-ray of exposure rate 2〜8(C/kg/min) and 5〜33×10^<-4>(C/kg/min), respectively. Irradiation current of I=5 (pA) to 300(pA) was measured with an electrometer at applied voltage 10(V). The measured irradiation current has linearity against radiation intensity. And detection sensitivity of radiation was about 60(nA/ (C/kg/min)). Accordingly, it appears that the thin film radiation detector of TiO_2/alumina structure can be measuring intensity of γ-ray and X-ray. Moreover, the detector was made possible small size as 5×5×1(mm). Moreover, SiC/alumina structure has lower dark current than that of TiO_2/alumina structure. Therefore, it seems that SiC/alumina structure was good detector in comparison with TiO_2/alumina structure.

TIO_2膜已通过使用TICL_4+O_2气体混合物与底物偏置电路的50Hz等离子体增强CVD在600℃时沉积在氧化铝基板上。底物偏置电压为-50（v），气体混合比（TIO_2/O_2）为0.05。折射率，饮食常数和光学能隙分别约为2.7、120和3.0。薄膜辐射探测器是由TIO_2/氧化铝结构制成的。氧化铝板上的TIO_2（厚度为1mm）通过血浆CVD沉积100（nm）至1（μm）。 TIO_2的厚度似乎对检测器S/N字符的影响。 TIO_2厚度为200（NM）TIO_2/氧化铝结构的检测器暗电流施加的电压很少有pa，1（μm）厚度TIO_2/氧化铝的电压很少。因此，我认为TiO_2的厚度比小于100（nm）的厚度好。金薄膜将两个电子设置在TiO_2/氧化铝结构上，并在两个电子之间加1至100（v）。膜检测器分别被辐照2-8（C/kg/min）和5-33×10^<-4>（C/kg/min）的γ射线和X射线。在施加电压10（v）处用电子测量I = 5（PA）至300（PA）的辐照电流。测得的辐射电流具有抗辐射强度的线性。辐射的检测灵敏度约为60（Na/（c/kg/min））。据此，看来TIO_2/氧化铝结构的薄膜辐射检测器可以测量γ射线和X射线的强度。此外，将检测器的尺寸为5×5×1（mm）。此外，SIC/氧化铝结构的暗电流低于TIO_2/氧化铝结构。因此，与TIO_2/氧化铝结构相比，SIC/氧化铝结构似乎是良好的检测器。

项目成果

期刊论文数量（44）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Date H: "Development of RISA Detectors for Onsite Sensing and Microdocimetry"International Workshop on Radiation Risk and its Origin at Molecular and Cellular Level, JAERI-Conf.. 5.3. 65-75 (2003)

日期 H：“用于现场传感和微剂量测量的 RISA 探测器的开发”国际辐射风险及其分子和细胞水平起源研讨会，JAERI-Conf.. 5.3。

DOI：
发表时间：
期刊：
影响因子：
0
作者：
通讯作者：

Development of TiO_2/Ceramics Radiation Detectors by Plasma CVD

等离子体CVD法研制TiO_2/陶瓷辐射探测器

DOI：
发表时间：
2004
期刊：
The 21^<th> Symposium on Plasma Processing 21
影响因子：
0
作者：
Date H;Takamasa T;Shimozuma M
通讯作者：
Shimozuma M

Fundamental Study on Designing Radiation Detectors Using Radiation Induced Sure face Activation

利用辐射诱导的 Sure Face 激活设计辐射探测器的基础研究

DOI：
发表时间：
2004
期刊：
Proceedings of 11^<th> International Congress of the International Radiation Protection Association (IRPA11) 3h71
影响因子：
0
作者：
Date H;Takamasa T;Shimozuma M;Sawada T;下妻光夫;下妻光夫;Date H.;Takamasa T
通讯作者：
Takamasa T

下妻光夫: "TiCl_4+O_2を用いたイオンアシストプラズマCVD法によるTiO_2膜の生成"応用物理学会学術講演会予稿集. 1a-ZG-6. 106-106 (2003)

Mitsuo Shimotsuma：“使用TiCl_4+O_2通过离子辅助等离子体CVD生产TiO_2薄膜”日本应用物理学会学术会议记录1a-ZG-6（2003）。