Selectively doped heterojunction CCD

选择性掺杂异质结CCD

基本信息

批准号：
59850047
负责人：
SHIMOZUMA Mitsuo
金额：
$ 5.5万
依托单位：
Hokkaido University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1984
资助国家：
日本
起止时间：
1984 至 1985
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-59850047/
关键词：
heterojunction GaAs selective doping CCD MOVPE 有機金属気相成長 MOVPE MBE

项目摘要

1. Characterization of interrupted MOVPE growth interfaceInterruption of MOVPE growth is usually used to realize sharp doping profiles as well as sharp composition profiles. The effect of such a growth interruption on the electrical characteristics of the interface is investigated using C-V profiling and DLTS. When the interrupted interface is exposed to air, formation of deep levels with broad energy spectrum similar to the interface state density distribution at insulator-semiconductor structure are detected. This deep level formation is attributed to the disordering of interface atom regularity based on the unified disorder induced gap state model.2. DX centers in AlGaAsDX centers in AlGaAs play a dominant role in determining the threshold voltages of selectively doped heterostructure devices. The origin of the DX centers was, however, not clarified in spite of their importance. A new model is proposed for DX centers in which anti-bonding state of donor impurity-host bond is attributed to be the origin of the DX center. This model is based on the lineup of DX centers with respect of hybrid orbital energy of the host, suggesting the bonding-antibonding splitting of the electronic state.3. Generation of carriers at the heterojunction interfaceGeneration rate of interface electrons at selectively doped heterojunction interfaces is measured using CCD structures. It is shown that the generation rate is determined solely by the reverse current of the Al/AlGaAs Schottky barrier. The reverse current is mainly composed of generationrecombination current.4. Fabrication and operation of selectively doped heterojunction CCDsSelectively doped heterojunction CCDs are fabricated using self-aligned process to maintain the separation of electrodes in the submicron range. The successful operation of CCDs at 167 KHz is confirmed.

1。移动增长界面中断的表征MOVPE生长通常用于实现尖锐的掺杂曲线以及尖锐的组成曲线。使用C-V分析和DLTS研究了这种生长中断对界面电气特性的影响。当中断的界面暴露于空气中时，检测到具有与绝缘体 - 触发器处于界面状态密度分布结构的界面密度分布相似的深度水平的形成。这种深层的形成归因于基于统一疾病引起的间隙状态模型的界面原子规律性的无序。2。藻类中心中的DX中心在藻类中心的中心在确定有选择性掺杂异质结构设备的阈值电压方面起着主导作用。然而，尽管其重要性，但DX中心的起源并未澄清。为DX中心提出了一个新模型，在该中心中，供体杂质 - 宿主键的反键状态归因于DX中心的起源。该模型基于DX中心的阵容，涉及宿主的杂交轨道能，表明电子状态的键合 - 抗抗反键的分裂3。使用CCD结构测量有选择性掺杂的异质结接口处的界面电子界面电子界面速率的产生。结果表明，发电速率仅由Al/Algaas Schottky屏障的反向电流决定。反向电流主要由生成重组电流组成4。使用自动对准的过程制造有选择性掺杂的异质结的CCDSSELICTION CCDSSELICTION CCDSSELICTION掺杂的异质结CCD，以将电极的分离保持在亚微米范围内。确认CCD在167 kHz的成功操作得到了证实。