Development of Low Temperature Deposition Process of Carbon Thin Film by Low Frequency 50Hz Plasma CVD.

低频50Hz等离子体CVD碳薄膜低温沉积工艺的开发。

• 批准号: 02555056
• 负责人: SHIMOZUMA Mitsuo
• 金额: $ 2.18万
• 依托单位: College of Medical Technology, Hokkaido University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02555056/
• 关键词: Plasma CVD; Amorphous carbon; Low frequency plasma; Low temperature process; Chemical vapor deposition; Diamond thin film; H_2+CH_4 mixture; Passivation film; 13.56MHzRFプラズマCVD法; プラズマ解離; SiH_4+N_2混合ガス; アモルファスカ-ボン薄膜

Hydrogenated amorphous carbon (a-C : H) films show large thermal conductivity, chemical inertness, high electrical resistivity and breakdown field, and optical transparency, all of which are suitable for the coating material in microelectronics as well as in mechanical applications. A number of reports have been published on the preparation of a-C : H films by various methods. The low-temperature formation of such an a-C : H film is required for microelectronics application. The purpose of the present study is to deposited of amorphous carbon films on unheated substrate using low frequency 50Hz plasma CVD with hydrogen and methane (H_2+CH_4) mixtures. The results obtained may be summarized as below.1) Major electrical and optical properties of the present a-C : H films were measured. The films were highly transparent and showed very uniform interference color. The refractive index, resistivity, breakdown field strength and the optical band gap of the obtained a-C : H film were 2.4, 10^ … More <14> OMEGA cm, 10^6 V/cm and 4.0 eV, respectively. The deposition rate of a-C : H films under the condition specified above was 60 A/h.2) Infrared absorption as well as Raman spectroscopy showed that the film predominantly consisted of sp^3-bonded C.3) The electron temperature for H_2+CH_4 plasma at 50Hz to 13.56MHz plasma power frequency range was measured from the two-line radiance ratio method using the Balmer lines (Halpha, Hbeta). The electron temperature slowly decreased with increased plasma frequency below 200 kHz, but rapidly decreased between 200 kHz and 13.56MHz. The electron temperature was 16000 K at 1kHz and 8200 K at 13.56 MHz. Accordingly, it was deduced that the electron temperature of low-frequency plasmas is larger than that in high-frequency plasmas.4) From these results, it appears that dissociation of H_2+CH_4 gas is accelerated by high temperature electrons in 50Hz plasma. Moreover, the positive ion in 50Hz plasmas bombard on the deposited film, and the bombarding ion energy is spent as migration energy for rearrangement of deposited atoms. Therefore, the deposited a-C : H films by the 50Hz plasma CVD have the high-quality properties without substrate heating. Less

氢化的无定形碳（A-C：H）膜显示出较大的导热率，化学惰性，高电阻和分解场以及光学透明度，所有这些都适用于微电导物以及机械应用中的涂层材料。通过各种方法，已经发表了许多关于A-C：H膜制备的报告。这种A-C：H膜的低温形成是微电子应用所需的。本研究的目的是使用氢和甲烷（H_2+CH_4）混合物使用低频50Hz等离子体CVD沉积在未加热的底物上的无定形碳膜。获得的结果可以汇总如下1）测量当前A-C：H膜的主要电和光学性能。这些薄膜非常透明，并且显示出非常均匀的干扰颜色。获得的A-C：H膜的折射率，耐药性，分解场强度和光带间隙分别为2.4，10^…更多<14> Omega CM，10^ 6 V/cm和4.0 eV。 A-C：H膜在上述条件下的沉积速率为60 a/h.2）红外抽象以及拉曼光谱法表明，该膜主要由SP^3键C.3）h_2+ch_4 plasma的电子温度在50Hz至13.56MHz plasma plase频率范围内测量的H_2+CH_4等离子体的电子温度，该方法是两种方法。 HBETA）。电子温度随着血浆频率升高低于200 kHz而缓慢降低，但在200 kHz至13.56MHz之间迅速降低。 1kHz的电子温度为16000 K，在13.56MHz时为8200 K。根据这一点，可以推断出低频等离子体的电子温度大于高频等离子体中的电子温度。4）从这些结果中看来，H_2+CH_4气体在50Hz等离子体中的高温电子的分离加速了。此外，在沉积膜上的50Hz等离子体轰击中的阳性离子和轰击的离子能量作为迁移能量用于重新排列原子的迁移能量。因此，50Hz等离子体CVD的沉积A-C：H膜具有高质量的性能，而无需加热。较少的

项目成果

下妻 光夫,石川 基博,栃谷 元,田頭 博昭: "低周波50HzプラズマCVD法による非加熱基板上へのシリコン酸化膜生成" 電気学会論文誌A. Vol.111A. 1064-1070 (1991)

Mitsuo Shimotsuma、Motohiro Ishikawa、Hajime Tochiya、Hiroaki Tagashira：“通过低频 50Hz 等离子体 CVD 方法在未加热基板上生成氧化硅膜”日本电气工程师学会会刊 A.第 1064-1070 卷（1991 年）。

F.Ishizuka: "Measurement of the effective ionization coefficient in Ar and C_3F_8 mixtures" The Transactions of The Institute of Electrical Engineers of Japan. 111ーA. (1991)

F.Ishizuka：“Ar 和 C_3F_8 混合物中有效电离系数的测量”，日本电气工程师学会汇刊 111-A。

G. Tochitni, M. Shimozuma and H. Tagashira: "Estimation of silicon oxide films deposited by 50Hz plasma CVD using teos" Symposium on Plasma Processing. 9. 115-118 (1992)

G. Tochitni、M. Shimozuma 和 H. Tagashira：“使用 Teos 对通过 50Hz 等离子 CVD 沉积的氧化硅薄膜进行估计”等离子处理研讨会。

M.Shimozuma: "Diagnostics of H_2+CH_4 plasma for chemical vapor deposition by optical spectroscopy" Journal of Applied Physics. 67. (1991)

M.Shimozuma：“通过光谱诊断化学气相沉积的 H_2 CH_4 等离子体”应用物理学杂志。

G.Tochtani: "RELATIONSHIP BETWEEN POWER FREQUENCY AND PROPERTIES OF SILICON OXIDE FILM DEPOSITIED FROM TEOS BY PLASMA CVD" Proceedings of the 8th Symposium on Plasma Processig. 8. 281-284 (1991)

G.Tochtani：“通过等离子体 CVD 从 TEOS 沉积的硅氧化膜的电源频率与性能之间的关系”第八届等离子体加工研讨会论文集。