Development of Low Temperature Deposition Process of Silicon Oxide Film by Low Frequency Plasma CVD (TEOS+O_2)

低频等离子体CVD（TEOS O_2）低温氧化硅薄膜沉积工艺的发展

基本信息

批准号：
04555018
负责人：
DATE Hiroyuki
金额：
$ 1.6万
依托单位：
Hokkaido University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1993
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-04555018/
关键词：
Plasma (CVD)Silicon oxide film Low frequency plasma TEOS Thin film deposition Low temperature process Integrated circuit process Unequilibrium plasma 50HzプラズマCVD法 TEOS+O_2 ドライプロセス層間絶縁膜表面保護膜

项目摘要

Silicon oxide films have been used in the fabrication of integrated circuits as the insulation layr of metal-oxide-semiconductor structures or as a passivation layr. In the beginning, silicon oxide films used in integrated circuits were prepared by thermal oxidation of silicon substrates or thermal chemical vapor deposition (CVD). Recently, many kinds of methods to prepare the films, such as low pressure CVD, plasma oxidation, sputtering, and plasma CVD have been developed. Among these methods, plasma CVD can deposit high quality silicon oxide films at comparatively low substrate temperatures. Moreover, silicon oxide films with good step coverage are deposited by plasma CVD using TEOS (Tetraethoxysilane). In this work, the silicon oxide films was deposited using TEOS as a silicon source by using a low frequency (50Hz) plasma CVD.It is found in the present work that the substrate heating at deposition is required to obtain acceptable electrical properties when silicon oxide films are deposited from a TEOS and oxygen mixture, even by low frequency (50Hz) plasma CVD.The films deposited at 200。C from the plasma of a 3% TEOS mixture were found to be high quality insulating films ; the resistivity was 10^<16>OMEGA cm and the breakdown strength 7X10^6 V/cm. Moreover, Auger electron spectrum analysis revealed that carbon atoms were not detected from the films in spite of the presence of carbon atoms in the TEOS molecule. With optical emission spectrum analysis of the TEOS and oxygen mixture plasma, strong emissions from the CO and CO_2 molecules were observed.

氧化硅薄膜已被用于集成电路的制造，作为金属氧化物半导体结构的绝缘层或钝化层。最初，用于集成电路的氧化硅薄膜是通过硅衬底的热氧化或热氧化来制备的。近来，已开发出多种制备薄膜的方法，例如低压CVD、等离子体氧化、溅射和等离子体CVD。 CVD可以在相对较低的衬底温度下沉积高质量的氧化硅薄膜，并且使用TEOS（四乙氧基硅烷）通过等离子体CVD沉积具有良好台阶覆盖的氧化硅薄膜。通过使用低频（50Hz）等离子体CVD。在目前的工作中发现，当从TEOS和氧气混合物沉积氧化硅薄膜时，沉积时的衬底加热需要达到可接受的电性能，甚至通过低频（50Hz）等离子体CVD。薄膜在200℃下沉积。发现来自3％TEOS混合物的等离子体的C是高质量绝缘膜；电阻率为10^16Ωcm，击穿强度为7×10^6V/cm。此外，俄歇电子能谱分析表明碳原子。尽管 TEOS 分子中存在碳原子，但通过对 TEOS 和氧气混合物等离子体的光学发射光谱分析，观察到 CO 和 CO_2 分子的强烈发射。