Investigation of Oxidation Mechanisms in SOI Structures

SOI 结构氧化机制的研究

基本信息

批准号：
08455161
负责人：
HIRAMOTO Toshiro
金额：
$ 4.86万
依托单位：
University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455161/
关键词：
SOI MOSFET Charge Pumping Oxidation Interface Traps Silicon Oxide MOS LSI 拡散 Si

项目摘要

Thin film Silicom-on-Insulator (SOI) technology has attracted much attention for high-speed and low-power device applications. Usually, the process for SOI device fabrication is compatible with conventional bulk devices. However, the SOI device has one more silicon/oxide interfaces and the mechanisms of oxidation and other process in SOI substrates are not necessarily the same as the bulk materials. The purpose of this study is to investigate the oxidation mechanisms and the interface trap characteristics in SOI structures. First, a new technique is developed to measure the interface traps in SOI using charge pumping method. The conventional charge pumping method are not applied to SOI because of high resistivity of body region. We fabricated SOI structures with body terminal. In our new method, the pulse voltage is applied not only to the gate but also the body. The body pulse suppresses the reduction of the charge pumping current and enables us to accurately measure the interface traps in SOI devices. Next, a new technique is also developed to measure the energy distribution of the interface traps in SOI using modified charge pumping method. The oxidation mechanisms and interface trap characteristics are intensively investigated by above mentioned new technique and it is suggested that the interface of SOI structure is not degraded compared with the interfaces in convensional bulk materials.

薄膜在绝缘子（SOI）技术上，对高速和低功率设备应用引起了很多关注。通常，SOI设备制造的过程与传统的散装设备兼容。但是，SOI设备具有另一种硅/氧化物界面，SOI底物中的氧化和其他过程的机制不一定与散装材料相同。这项研究的目的是研究SOI结构中的氧化机制和界面陷阱特征。首先，开发了一种新技术来使用电荷泵送方法在SOI中测量界面陷阱。由于身体区域的高电阻率，常规电荷泵种方法不应用于SOI。我们用身体末端制造了SOI结构。在我们的新方法中，脉冲电压不仅应用于栅极，还应用于身体。身体脉冲抑制了电荷泵送电流的还原，并使我们能够准确测量SOI设备中的界面陷阱。接下来，还开发了一种新技术来使用修改的电荷泵送方法来测量SOI中接口陷阱的能量分布。通过上述新技术对氧化机制和界面陷阱特性进行了深入研究，并建议SOI结构的界面与交汇体散装材料的界面相比不会降解。