Basic research on ultra-low voltage MOS transistors aiming at sub-100mV operation
针对亚100mV运行的超低压MOS晶体管基础研究
基本信息
- 批准号:25630135
- 负责人:
- 金额:$ 2.58万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Challenging Exploratory Research
- 财政年份:2013
- 资助国家:日本
- 起止时间:2013-04-01 至 2014-03-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The objective of this research is to develop a semiconductor device operating at as low as 100mV. In order to obtain high on/off ratio at low voltage, a MOS transistor with a floating gate is proposed, where threshold voltage (Vth) automatically decreases in the ON state while Vth increases in the OFF state. The device was actually fabricated, and the decrease in Vth in the ON state and the increase in Vth in the OFF stage was demonstrated at as low as 100mV. It was also demonstrated that the stability of an SRAM cell was improved at 100mV.
这项研究的目的是开发以低至100mV的速度运行的半导体设备。为了在低压下获得高/关节,提出了具有浮栅极的MOS晶体管,其中阈值电压(VTH)在ON状态下自动降低,而VTH在OFF状态下增加。该设备实际上是在制造的,并且在ON状态下VTH的减小和偏离阶段的VTH的增加在低至100mV的情况下显示出来。还证明,SRAM细胞的稳定性在100mV时得到了改善。
项目成果
期刊论文数量(2)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Ultra-low voltage (0.1V) operation of Vth self-adjusting MOSFET and SRAM cell
- DOI:10.1109/vlsit.2014.6894416
- 发表时间:2014-06
- 期刊:
- 影响因子:0
- 作者:A. Ueda;Seungmin Jung;T. Mizutani;Ashok Kumar;T. Saraya;T. Hiramoto
- 通讯作者:A. Ueda;Seungmin Jung;T. Mizutani;Ashok Kumar;T. Saraya;T. Hiramoto
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HIRAMOTO Toshiro其他文献
HIRAMOTO Toshiro的其他文献
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{{ truncateString('HIRAMOTO Toshiro', 18)}}的其他基金
Basic research on influence of single impurity atom on statistics of nanoscale transistor characteristics
单一杂质原子对纳米晶体管特性统计影响的基础研究
- 批准号:
26630148 - 财政年份:2014
- 资助金额:
$ 2.58万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Nano MOSFET Fluctuations and Device Integrity
Nano MOSFET 波动和器件完整性
- 批准号:
18063006 - 财政年份:2006
- 资助金额:
$ 2.58万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
A research on silicon nano-devices for single-electron, quantum, CMOS integrated circuits operating at room temperature
室温下运行的单电子、量子、CMOS集成电路的硅纳米器件研究
- 批准号:
16201029 - 财政年份:2004
- 资助金额:
$ 2.58万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Exploration of Physics and Integration of Nano-Scale MOSEFET with Suppressed Fluctuations
抑制波动的纳米级MOSFET的物理和集成探索
- 批准号:
13450135 - 财政年份:2001
- 资助金额:
$ 2.58万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Fabrication of Silicon Nano-Devices with High Controllability beyond Lithography Limit
超越光刻极限的高可控性硅纳米器件的制造
- 批准号:
10450112 - 财政年份:1998
- 资助金额:
$ 2.58万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Study on Performance Increase and Fluctuation Suppression in Thin Film SOI MOSFET by utilizing quantum effects
利用量子效应提高薄膜SOI MOSFET性能并抑制波动的研究
- 批准号:
10555117 - 财政年份:1998
- 资助金额:
$ 2.58万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Investigation of Oxidation Mechanisms in SOI Structures
SOI 结构氧化机制的研究
- 批准号:
08455161 - 财政年份:1996
- 资助金额:
$ 2.58万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Fluctuations of Characteristics in Sub-0.1mum Thin Film SOI CMOS LSI Devices
0.1微米以下薄膜SOI CMOS LSI器件的特性波动
- 批准号:
07555109 - 财政年份:1995
- 资助金额:
$ 2.58万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
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