Fundamental Study of Nitride Semiconductor Materials for UV-Wavelength Laser Diode

紫外波长激光二极管氮化物半导体材料的基础研究

• 批准号: 08455037
• 负责人: YONEZU Hiroo
• 金额: $ 4.8万
• 依托单位: TOYOHASHI UNIVERSITY OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455037/
• 关键词: massively parallel optical connection; three-dimensional integrated circuit; strained short-period superlattice; dislocation density; GaAs selective growth on Si; GaP selective growth; atomic hydrogen irradiation; small optical devices; 窒化物系化合物半導体

Many InGaN-based applications of optoelectronic and electronic devices are demonstrated on sapphire and SiC substrates. UV-wavelength devices with GaN and AlGaN materials, however, have not yet been performed regardless of many advantages such as the high photon energy and a small spot size of laser beam. It is necessary for realization of UV-wavelength devices to obtain high quality GaN and AlGaN hetero epilayrs. Heteroepitaxial growth processes of GaN and AlN on sapphire and especially Si substrates are not clear. Therefore, it has been investigated the growth mechanism of GaN by MBE and AIN by MEE on sapphire and Si substrates.At first, It has been studied that the high quality GaN layr was grown on sapphire substrate using a-GaN buffer layr deposited at room temperature. It has been found that the amorphous GaN buffer laver deposited at room temperature changes to the single crystal by annealing at 700ﾟC.It is concluded that the GaN epilayr with the flat surface is successfully grown on sapphire (0001) by using the amorphous GaN buffer layr.Then a GaN layr was successfully grown on 6H-SiC substrate using the AlN buffer layr. It was found that the almost threading dislocations are generated at the hetero interface between the AlN buffer layr and the GaN epilayr.Finally, we attempted to grow a GaN layr on Si (111) substrate by MBE using an AlN buffer layr by MEE method. The thin AlM layr was effectively grown on the Si (111) substrate by MEE.It is also found that the surface morphology of the 60nm-thick GaN epilayr on the AlN/Si (111) substrate was extremely flat by AFM observation.These results can be applied tothe fabrication of the high quality GaN epilayr on the Si substrate and the materials for the blue-wave length optoelectronic devices.

许多基于 InGaN 的光电和电子器件应用已在采用 GaN 和 AlGaN 材料的蓝宝石和 SiC 衬底上进行了演示，但尽管具有高光子能量和小光斑尺寸等许多优点，但尚未实现。实现紫外波长器件需要在蓝宝石和 AlGaN 上获得高质量的 GaN 和 AlGaN 异质外延生长工艺。尤其是Si衬底尚不明确，因此，人们研究了蓝宝石和Si衬底上MBE和MEE生长GaN的机理。 -室温沉积的GaN缓冲层已经发现，在室温下沉积的非晶GaN缓冲层通过在700℃退火后转变为单晶。结论是利用非晶GaN缓冲层在蓝宝石(0001)上成功生长了平坦表面的GaN外延层。然后利用AlN缓冲层在6H-SiC衬底上成功生长了GaN层，发现几乎是螺纹化的。位错在AlN缓冲层和GaN外延层之间的异质界面处产生。最后，我们尝试在Si（111）衬底上生长GaN层通过MEE方法使用AlN缓冲层通过MBE在Si（111）衬底上有效地生长了薄AlM层。还发现AlN/Si（111）上60nm厚的GaN外延层的表面形貌。通过AFM观察，衬底非常平坦。这些结果可应用于Si衬底上高质量GaN外延层的制造以及蓝光波长光电器件的材料。

项目成果

Katsuya Samonji, et al: "Reduction of threading dislocation density in InP-on-Si heteroepitaxy withg strained short-period superlattieces" Applied Physics Letters. 69・1. 100-102 (1996)

Katsuya Samonji 等人：“利用应变短周期超晶格减少 InP-on-Si 异质外延中的螺纹位错密度”，《应用物理快报》69・1 (1996)。

Mikihiro Yokozeki: "Reduction of threading dislocation density in an (InAs) 1 (GaAs) 1 strained short-period superlattices by atomic hydrogen irradiation" Japanese Journal of Applied Physics. 35・5A. 2561-2565 (1996)

Mikihiro Yokozeki：“通过原子氢辐照减少 (InAs) 1 (GaAs) 1 应变短周期超晶格中的穿透位错密度”，日本应用物理学杂志 35・5A 2561-2565 (1996)。

Naoki Ohshima, Hiroo Yonezu, Seiji Yamahira and Kangsa Pak: "Initial Growth of GaN on Sapphire (0001) Using An Amorphous Buffer Layr Formed at Room Temperature by RF-MBE" Journal of Crystal Growth. to be published. (1998)

Naoki Ohshima、Hiroo Yonezu、Seiji Yamahira 和 Kangsa Pak：“使用 RF-MBE 在室温下形成的非晶缓冲层在蓝宝石 (0001) 上初始生长 GaN”晶体生长期刊。

Yasufumi Takagi, Hiroo Yonezu, Shinobu Uesugi, and Naoki Ohshima: "Reduction of threading dislocation density and suppression of crack formation in In_xGa_<l-x>P (X-0.5) grown on Si (100) using strained short-period superlattices" Japanese Journal of Appl

Yasufumi Takagi、Hiroo Yonezu、Shinobu Uesugi 和 Naoki Ohshima：“使用应变短周期超晶格在 Si (100) 上生长的 In_xGa_<l-x>P (X-0.5) 中降低穿透位错密度并抑制裂纹形成”日本期刊

Mikihiro Yokozeki, et al: "Reduction of threading dislocation density in an (InAs) 1 (GaAs) 1 strained short-period superlattices by atomic hydrogen irradiation" Japanese Journal of Applied Physics. 35・5A. 2561-2565 (1996)

Mikihiro Yokozeki 等人：“通过原子氢辐照减少 (InAs) 1 (GaAs) 1 应变短周期超晶格中的穿透位错密度”日本应用物理学杂志 35・5A 2561-2565 (1996)。