Massively Parallel Optical Interconnection for Realization of Three-Dimensional Integrated Circuits

用于实现三维集成电路的大规模并行光互连

基本信息

批准号：
07555014
负责人：
YONEZU Hiroo
金额：
$ 5.38万
依托单位：
TOYOHASHI UNIVERSITY OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555014/
关键词：
massively parallel optical connection three-dimensional integrated circuit strained short-period superlattice dislocation density GaAs selective growth on Si GaP selective growth atomic hydrogen irradiation small optical devices GaAs-on-Si

项目摘要

It is essential to fabricate small optical device on Si integrated circuits, which operate under small current, for realization of three-dimensional integrated circuits. Firstly, we attempted to grow a high quality Gap layr as the initial layr on Si substrates. The generation of stacking faults was suppressed at the initial growth stage using the migration-enhanced epitaxy (MEE).The normal spontaneous emission was obtained from a InGaP/GaAs double-hetero structure light emitting diode grown on the GaP layr on Si substrate.Then, we performed the selective growth of GaAs on Si substrate covered with a high quality dry-SiO_2 mask under atomic hydrogen (H) irradiation. The propagation of anti-phase domains to the surface was prevented by forming a P-prelayr at low temperature on the surface of Si substrate when the initial GaP layr was selectively grown. It was also found that the density of threading dislocations was reduced in a GaAs selective epitaxial layr by inserting strained short-period superlattices (SSPSs) grown by MEE.Moreover, it appeared that misfit dislocations introduced at the heterointerface with lattice relaxation were electrically passivated by atomic H irradiation.These results can be applied to the fabrication of small optical devices with high quality and reliability for massively parallel optical interconnection among stacked Si integrated circuits.

在SI集成电路上制造小型光学设备至关重要，该电路在小电流下运行，以实现三维集成电路。首先，我们试图将高质量的差距Layr作为SI基板上的初始差异。使用迁移增强的外观（MEE）在初始生长阶段抑制了堆叠断层的产生。正常的自发发射是从ingap/gaAS双hetero结构的ingap/gaas双hetero结构光二极管发光二极管在Si sibstrate上生长的二极管的。，我们在原子氢（H）辐射下覆盖了高质量的干sio_2掩码的SI基板上的GAAS选择性生长。当最初的间隙Layr选择性地生长时，通过在Si底物表面的低温表面形成p-prelayr，可以防止反相结构域传播到表面。还发现，通过插入MEE的螺纹脱位密度降低，通过插入由MEE生长的紧张的短期超级晶格（SSPS）。原子H辐射。这些结果可以应用于制造具有高质量和可靠性的小光学设备，以在堆叠的SI集成电路之间进行大量平行的光学互连。