Research on New Control Technology for Fabrication of Semiconductor Low Dimensional Structures

半导体低维结构制造新型控制技术研究

基本信息

批准号：
08455013
负责人：
FUJITA Shizuo
金额：
$ 4.42万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455013/
关键词：
photoassisted growth growth selectivity for photoirradiation growth selectivity with photon energy growth selectivity with temperature ZnCdSSe low dimensional structure structure control quantum structure

项目摘要

This research was carried out aimed at developing a new technology for controlling fabrication of semiconductor low dimensional structures utilizing selective growth characteristics with photoassisted processes, which had been explored by our group. The results are summarized as follows ;1.Growth processes with photoirradiation were investigated by means of mass spectroscopy during the growth, and we found that the growth proceeded with thermal decomposition of alkylzinc, its adsorption to the growth surface, and photocatalytic reaction.2.The decomposition characteristics of alkylzinc and alkylcadmium were found to be different under photoirradiation, and this result allowed successful growth control of ZnCdSe and ZnCdS multilayr structures with turning on and off the irradiation. The well-defined structure of them was confirmed by x-ray diffraction, photoluminescence, and exciton-related optical properties.3.The selectivity of growth on different underlying layr was investigated, and the result suggested that the growth was dominated both by thermal energy and photon energy. At a lower temperature the growth did not occur if the irradiation energy was lower than the bandgap, but it did at a higher temperaturu because a thin layr could be formed by the thermal energy which can cause the successive photocatalytic reactions.The selective growth that the growth occured on ZnSe but not on ZnS was demonstrated with appropriate choose of the substrate temperature and the irradiation energy. This result showed that thelow dimentional structures with in-plane patterns could actually

这项研究的目的是开发一种新技术，用于控制半导体低维结构的制造，利用我们小组探索的光辅助过程，利用选择性的增长特征来控制选择性的生长特征。结果总结如下； 1.通过质谱在生长过程中研究了具有光辐射的生长过程，我们发现生长是通过烷基素的热分解而进行的，其吸附到生长表面，以及光催化反应。2。烷基和烷基烷基菌的分解范围与烷基菌的分解范围相同，从而与烷基菌相同，从而与烷基烷基菌相同，从而与烷基烷基化的相同，从而使烷基菌与烷基化的相同，从而使烷基化的含量与众不同。 ZnCDSE和ZnCDS Multilayr结构，并打开和关闭辐照。通过X射线衍射，光致发光和与激子相关的光学特性证实了它们的定义明确的结构。3。研究了不同基础Layr的生长的选择性，结果表明该生长既由热能和热能能量占主导地位。在较低的温度下，如果辐照能低于带隙，则不会发生生长，但是在较高的温度下，由于热能可以形成薄的layr，这可能会导致连续的光催化反应。在ZNSE上发生的选择性增长，但在ZNS上不适用ZNS，而在ZNS上不能选择适当的辐射能量和辐射能量。该结果表明，带有平面模式的Thelow尺寸结构实际上可以