Research on New Control Technology for Fabrication of Semiconductor Low Dimensional Structures

半导体低维结构制造新型控制技术研究

基本信息

批准号：
08455013
负责人：
FUJITA Shizuo
金额：
$ 4.42万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455013/
关键词：
photoassisted growth growth selectivity for photoirradiation growth selectivity with photon energy growth selectivity with temperature ZnCdSSe low dimensional structure structure control quantum structure

项目摘要

This research was carried out aimed at developing a new technology for controlling fabrication of semiconductor low dimensional structures utilizing selective growth characteristics with photoassisted processes, which had been explored by our group. The results are summarized as follows ;1.Growth processes with photoirradiation were investigated by means of mass spectroscopy during the growth, and we found that the growth proceeded with thermal decomposition of alkylzinc, its adsorption to the growth surface, and photocatalytic reaction.2.The decomposition characteristics of alkylzinc and alkylcadmium were found to be different under photoirradiation, and this result allowed successful growth control of ZnCdSe and ZnCdS multilayr structures with turning on and off the irradiation. The well-defined structure of them was confirmed by x-ray diffraction, photoluminescence, and exciton-related optical properties.3.The selectivity of growth on different underlying layr was investigated, and the result suggested that the growth was dominated both by thermal energy and photon energy. At a lower temperature the growth did not occur if the irradiation energy was lower than the bandgap, but it did at a higher temperaturu because a thin layr could be formed by the thermal energy which can cause the successive photocatalytic reactions.The selective growth that the growth occured on ZnSe but not on ZnS was demonstrated with appropriate choose of the substrate temperature and the irradiation energy. This result showed that thelow dimentional structures with in-plane patterns could actually

本研究旨在开发一种利用光辅助工艺的选择性生长特性来控制半导体低维结构制造的新技术，这是我们小组探索的。主要研究结果如下： 1．通过质谱分析了生长过程中的光辐照生长过程，发现生长过程是通过烷基锌的热分解、烷基锌在生长表面的吸附以及光催化反应进行的。2．我们发现烷基锌和烷基镉在光照射下的分解特性不同，这一结果使得可以通过打开和关闭照射来成功控制 ZnCdSe 和 ZnCdS 多层结构的生长。通过X射线衍射、光致发光和激子相关的光学性质证实了它们的明确结构。3.研究了不同底层上生长的选择性，结果表明生长是由热能主导的。和光子能量。在较低温度下，如果辐照能量低于带隙，则不会发生生长，但在较高温度下会发生生长，因为热能可以形成薄层，从而引起连续的光催化反应。通过适当选择衬底温度和辐照能量，证明生长发生在 ZnSe 上，而不是在 ZnS 上。这一结果表明，具有面内图案的低维结构实际上可以