Evolution of optical-electronic-magnetic multifunctions with novel oxide semiconductors

新型氧化物半导体光-电-磁多功能的演变

• 批准号: 22360007
• 负责人: FUJITA Shizuo
• 金额: $ 12.4万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22360007/
• 关键词: 酸化ガリウム; コランダム構造; 混晶; スピントロニクス; バンドギャップ制御; ヘテロ構造; パワーデバイス; ドーピング; 酸化物半導体; 量子機能; 機能エンジニアリング; バンドギャップエンジニアリング; ミストCVD法

In order for the materials design toward new functions, we proposed simultaneous application of “band gap engineering” and “function engineering” for corundum-structured oxide materials based on α-Ga_2O_3. The former establishes the basic device structure and the latter contributes the materials functionalization. New interaction phenomena were observed by the alloying, leading to new multifunctional materials, such as ferromagnetic semiconductors with Curie temperature above room temperature, which are effective for next generation devices with novel physics.

为了实现新功能的材料设计，我们提出了基于α-Ga_2O_3的刚玉结构氧化物材料的“带隙工程”和“功能工程”的同时应用，前者建立了基本的器件结构，后者贡献了材料。通过合金化观察到新的相互作用现象，从而产生新的多功能材料，例如居里温度高于室温的铁磁半导体，这对于具有新颖物理特性的下一代器件非常有效。

项目成果

TEM observation of α-(GaFe)_2O_3 and a-Al_2O_3 interface

α-(GaFe)_2O_3与a-Al_2O_3界面的TEM观察

• 发表时间: 2011
• 作者: M.Sasidharan;K.Nakashima;N.Gunawardhana;T.Yokoi;M.Inoue;S.Yusa;M.Yoshio;T.Tatsumi;Kentaro Kaneko and Shizuo Fujita
• 通讯作者: Kentaro Kaneko and Shizuo Fujita

Solution-based vapor deposition of green materials: oxides and organic thin films and nanomaterials

绿色材料的溶液气相沉积：氧化物、有机薄膜和纳米材料

• 发表时间: 2011
• 作者: Shizuo Fujita;Kentaro Kaneko;Takumi Ikenoue;Hiroshi Ito;Takuto Igawa;Jinchun Piao;Sam-Dong Lee;and Shigetaka Katori
• 通讯作者: and Shigetaka Katori

Growth and electrical property of tin-doped α-Ga_2O_3 thin films on sapphire substrates

蓝宝石衬底上锡掺杂α-Ga_2O_3薄膜的生长及其电学性能

• 发表时间: 2012
• 作者: 早川昌志;大越朋哉;酒井政道;長谷川繁彦;北島彰;大島明博;樋口宏二;中村修;Kazuaki Akaiwa and Shizuo Fujita
• 通讯作者: Kazuaki Akaiwa and Shizuo Fujita

特許

专利

• 发表时间: 2008

Fabrication of α-(AlGa)_2O_3 thin films by ultrasonic atomization Mist-CVD

超声雾化Mist-CVD制备α-(AlGa)_2O_3薄膜

• 发表时间: 2011
• 作者: Hiroshi Ito;Kentaro Kaneko;and Shizuo Fujita
• 通讯作者: and Shizuo Fujita