Research on precise artificial structure and position control of ultra-small nanodots, nanorods, and nanolines

超微小纳米点、纳米棒、纳米线的精密人工结构及位置控制研究

基本信息

批准号：
15360009
负责人：
FUJITA Shizuo
金额：
$ 8.45万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15360009/
关键词：
focused ion beam nanopatterning nanodots MOCVD growth artificial arrangement zinc oxide exciton properties optical functions ZnO

项目摘要

The research has aimed at the development of new artificial control technology for size, shape and position of low dimensional nanostructures, with which novel device applications are expected. The results are summarized as follows ;1.The basic idea, that is, substrate nanopatterning with focused ion beam(FIB) and successive growth of semiconductors, is proposed for the purpose.2.Formation of nanolines on substrates by FIB resulted in selective growth of ZnO nanodots along the line. At the certain growth conditions, the periodical arrangement of the nanodots was performed.3.A novel technique to form nanoholes on the SiO2 surface over the wide area with the separation smaller than 1 μm has been developed. The growth of ZnO on the substrate resulted in one nanodot on one nanohole, that is, the complete control of position of a nanodot was achieved. The almost complete control was domonstrated even the separation between the nanodots was smaller than 200 nm.4.The mechanism of the selective formation of nanodots on nanohole was attributed to the interation between Ga implanted by the FIB process and precursors for growing ZnO. Liquids of Ga at the growth temperature may react with the precursors and form a nucleus center in the nanohole.5.Cathodoluminescence from single ZnO nanodot was confiremed and quantum effects in nanodots were evidenced, suggesting that the nanodots are of high optical quality capable of being applied to practical devices.6.Formation of ZnO nanodots along the step edge of sapphire substrate was observed. This was followed by the formation of nanolines. These phenomena have not been often observed near the atmospheric pressure under which the MOCVD growth has been done.In conclusion, artificial control of nanostructures has been successfully carried out by nanopatterning the substrate surface by FIB or by forming clear step edge on the surface. The results are highlighted as a novel technology to allow various nanostructure devices.

该研究旨在开发低维纳米结构尺寸、形状和位置的新型人工控制技术，并有望在新型器件中得到应用；1.基本思想，即基底纳米图案化。为此，提出了聚焦离子束（FIB）和半导体的连续生长。2.通过FIB在基底上形成纳米线，在一定的生长条件下，沿线选择性生长ZnO纳米点。 3.开发了一种在 SiO2 表面上大面积形成纳米孔的新技术，其间距小于 1 μm。 ZnO 在基板上的生长导致一个纳米孔上有一个纳米点。也就是说，即使纳米点之间的间距小于200 nm，也实现了对纳米点位置的完全控制。4、选择性形成纳米点的机理。纳米孔上的纳米点归因于通过 FIB 工艺注入的 Ga 与生长 ZnO 的前体之间的相互作用。在生长温度下，Ga 液体可能与前体发生反应并在纳米孔中形成核中心。 5.单个 ZnO 纳米点的阴极发光。纳米点的量子效应得到证实，表明纳米点具有高光学质量，能够应用于实际器件。 6. ZnO的形成观察到沿着蓝宝石衬底的台阶边缘出现纳米点，随后形成纳米线，这些现象在 MOCVD 生长的大气压附近并不常见。总之，纳米结构的人工控制已经成功。通过 FIB 对基底表面进行纳米图案化或在表面形成清晰的阶梯边缘来进行，其结果被强调为一种允许各种纳米结构器件的新技术。