Secondary ion mass spectrometer

二次离子质谱仪

• 批准号: 527629941
• 金额: --
• 依托单位: Otto-von-Guericke-Universität Magdeburg
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2023
• 资助国家: 德国
• 起止时间: 2022-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/527629941?language=en
• 关键词: Secondary; ion; mass; spectrometer

For highly spatially and depth-resolved atomic composition analysis of solids and particularly for determination of dopant profiles in semiconductors a replacement for a more than 30 year old secondary ion mass spectrometer (SIMS) shall be purchased for the Institute of Physics at the Faculty of Natural Sciences at the Otto-von-Geuricke University Magdeburg. The spectrometer will be oprated by the department of Semiconductor Epitaxy which is intensily occupied with the fabrication, investigation and application of ultra-pure, single crystalline epitaxial layers out of the group of III-V compound semiconductors. Current topics of that research are local growth of semiconductor structures by laser-assisted metalorganic vapor phase epitaxy, vertical power electronics based on group-III nitrides and sputter epitaxy of transition metal nitrides. Besides a typical depth resolution of about 1nm a higher lateral resolution is also targeted, in particular for a better understanding of the local growth and of device properties. In addition, detection of surface contaminations is helpful which are typically problematic during fabrication of layer structures by epitaxy methods and of optoelectronic and electronic devices. Cooperating groups of the Institute of Physics (Material physics, Solid state physics) and of the Institute for Materials Engineering and Joining Technology (Metallic materials) particpate in the use of the instrument.

为了对固体进行高度空间和深度分辨的原子成分分析，特别是确定半导体中的掺杂剂分布，应为自然学院物理研究所购买超过 30 年历史的二次离子质谱仪 (SIMS) 的替代品。马格德堡奥托·冯·格律克大学的科学。该光谱仪将由半导体外延部门操作，该部门主要致力于 III-V 族化合物半导体中超纯单晶外延层的制造、研究和应用。该研究当前的主题是通过激光辅助金属有机气相外延、基于III族氮化物的垂直功率电子器件和过渡金属氮化物的溅射外延来局部生长半导体结构。除了约 1nm 的典型深度分辨率外，还瞄准了更高的横向分辨率，特别是为了更好地了解局部生长和器件特性。此外，表面污染的检测是有帮助的，这在通过外延方法制造层结构以及光电和电子器件的过程中通常是有问题的。该仪器由物理研究所（材料物理、固体物理）和材料工程与连接技术研究所（金属材料）合作组参与使用。