Development of the Device for Producing a Large Area Thin Film by a New Maicrowave Mode

新型微波模式大面积薄膜制备装置的研制

基本信息

批准号：
07558180
负责人：
KAWAI Yoshinobu
金额：
$ 1.34万
依托单位：
KYUSHU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07558180/
关键词：
microwave large diameter plasma ECR plasma multi-slot antenna silane gas reactive gas amorphous silicon microwave propagation characteristics 反応性プラズマ

项目摘要

The objective is to produce a high density ECR plasma with the diameter larger than 20 cm using a new type of microwave mode (2.45GHz) and to prepare a large area amorphous silicon film by plasma CVD.We have performed the experiments using a multi-slot antenna develomed at Kyushu University. Obtained main results are as follows :(1) In order to study the role of microwave propagation in plasma uniformity, we measured the axial propagation of the microwave in ECR plasma using a mixer. It was found that (i) when the plasma density is low, both the R-wave and L-wave exist before the resonant point and onlythe L-wave does after the resonant point, and (ii) when the plasma density is high, only the R-wave exists.(2) The standing patterns which have been observed in the most of the experiments were formed by the L-wave.(3) We measured radially propagating waves and the propagation direction using a mixer and a phase shifter. It was found that there is the X-wave propagating across the magnetic field. The x-wave has not been observed in ECR plasma, so far.(4) We measured the parameters of the silane plasmas diluted in He or H2 with the Langmuir probe with a heater and a microwave interferometer. It was found that there are a lot of negative ions. It will be neccesary to identify negative ion species.(5) We deposited amorphous silicon films on the glass substrates and estimated the deposition rate and the conductivity. The high quality films with the deposition rate of 15 /sec were obtained.(6) We examined the dependence of the plasma parameters on the gas flow rate. It was found that higher deposition rate would be achieved above 50sccm.(7) Above results are very important data for depositing a large area thin film and the present experiments will make the advancement the study on the preparation of a large area thin film.

目的是使用新型的微波模式（2.45GHz）产生高密度ECR血浆，其直径大于20 cm，并通过等离子CVD制备大面积的无定形硅膜，我们使用了多型洛特天线在Kyushuushu University进行了实验。获得的主要结果如下：（1）为了研究微波传播在血浆均匀性中的作用，我们使用混合器测量了ECR血浆中微波炉的轴向传播。已经发现（i）当血浆密度较低时，R波和L波在谐振点之前存在，并且只有L波在谐振点之后才存在，并且（ii）当血浆密度很高时，只有R波就存在。搅拌机和相移。发现在整个磁场上存在X波传播。到目前为止，在ECR血浆中尚未观察到X波。（4）我们用加热器和微波炉干涉仪的Langmuir探针测量了在He或H2中稀释的Silane等离子体的参数。发现有很多负离子。鉴定负离子物种将是必要的。（5）我们将无定形硅膜沉积在玻璃基板上，并估计沉积速率和电导率。（6）我们检查了血浆参数对气体流速的依赖性。发现将在50SCCM以上达到较高的沉积速率。（7）结果是沉积大面积薄膜的非常重要的数据，目前的实验将使进步研究大面积薄膜的准备。