The mechanism for the 1.54 mum luminescence of erbiumdoped porous silicon and the method of attaining a high efficiency.

掺铒多孔硅1.54μm发光机理及获得高效率的方法。

• 批准号: 07455135
• 负责人: KIMURA Tadamasa
• 金额: $ 4.16万
• 依托单位: University of Electro-Communications
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07455135/
• 关键词: rare-earth ion; luminescence; erbium; ytterbium; neodium; holmium; porous silicon; silicon optical device; イッテルビウム; ポーラスシリコン; フォトルミネセンス; 蛍光寿命; X線光電子分光

In the 1997 research year, Er, Yb, Nd as well as Ho were chosen as rare earth elements and were incorporated into porous silicon (PS) as well as crystalline silicon (c-Si) hosts.The 1.54 mum luminescence due to the 4f electron transition from Er-dope PS showed formerly a width of about 10nm. In this research period, we introduced a hydrogen plasma annealing at -1000ﾟC after Er incorporation and obtained spectra composed of sharp peaks whose full-width-at-half-maximu (FWHM) is less than 1nm. We explained that silicon oxide and amorphous silicon regions were etched off by the hydrogen plasma treatment and that the remained Er-doped silicon nanocrystals showed sharp peaks.These sharp luminescence peaks exibited a small thermal quenching. This was due to the increased bandgap of silicon nanocrystals : (Presented in the MRS 1997 Fall Meeting, and submitted to J.Apple.Phys.)We studied the Yb - 1.0 mum luminescenece from Yb doped PS as a function of host PS treatment processes. Pre-oxidation of PS resulted in the one-order increase in the Yb luminescence intensty. Measurements of the decay times of PS and Yb luminescence showed that the passivation of the dangling bonds of PS with oxygen reduced the nonradaitive recombination centers, which led to an increse in the enrgy transfer efficiency from PS to Yb. (presented in J.Appl.Phys.)We measured the decay time of Nd doped PS,and obtained the decay times of 200-300 mus for the 0.93 mum and 1.06 mum luminescence peaks. In colaboration with Dr.A.Polman of FOM institue in Amsterdam, Ho ions were inplanted into c-Si, and the luminescence at - 1.2 mum due to the 4f-electron transition was observed for the first time.

在1997年的研究年度，ER，YB INE硅（C -SI）宿主。由于来自ER -DOPE PS的4F电子过渡而导致的1.54 MUM发光以前显示出大约10nm的宽度。光谱由尖锐的峰组成，其全宽度峰（FWHM）较少1nm，我们解释说，用氢等离子体treas蚀刻了氢等离子体的硅质硅硅含量的硅质含量，尖锐的发光峰降低了一个小的热淬火。 YB发光的强化，氧气与氧气的悬空减少了非放射性重组中心，从而导致ANN在从PS到YB的ENRGY转移中的ANN增量。首次观察到与阿姆斯特丹FOM的Polman博士进行的发光峰首次观察到c-Si的峰值。

项目成果

木村忠正: "Luminescence of rare earth doped porous silicon" Rare Earth doped Semiconductors II,Materials Research Society Symposium Proceedings. 422. 149-154 (1997)

Tadamasa Kimura：“稀土掺杂多孔硅的发光”稀土掺杂半导体 II，材料研究学会研讨会论文集 422. 149-154 (1997)。

Tadamasa Kimura, Y.Nishida, T.Dejima, R.Saito, and H.Isshiki: "Time decay characteristcis of the Yb^<3+> -related 0.98 mum emissions in porous silicon" Proceedings of the MRS '97 Fall Meeting (December 1-5,1997, Boston, MA) : Materials and Devices for Sil

Tadamasa Kimura、Y.Nishida、T.Dejima、R.Saito 和 H.Isshiki：“多孔硅中 Yb^<3 > 相关 0.98 mum 发射的时间衰减特性” MRS 97 秋季会议记录（12 月）

T.Kimura, I.Hosokawa, Y.Nishida, T.Dejima, R.Saito and T.Ikoma: "Luminescence of rare earth doped porous silicon" Materials Research Society Symposium Proceedings vol.422, Rare Earth Doped Semiconductors II,ed.by S.Coffa, A.Polman, and R.N.Schwartz, San F

T.Kimura、I.Hosokawa、Y.Nishida、T.Dejima、R.Saito 和 T.Ikoma：“稀土掺杂多孔硅的发光”材料研究学会研讨会论文集第 422 卷，稀土掺杂半导体 II，编辑。

Tooru Dejima: "Optical activation of erbium doped porous silicon by hydrogen plasma treatment" Proceeding of the MRS '97 Fall Meeting(Materials and Devices for Silicon-Based Optoelectronics). (1998)

Toru Dejima：“通过氢等离子体处理对掺铒多孔硅进行光学活化”MRS 97 秋季会议论文集（硅基光电子材料和器件）。

T.Dejima, R.Saito, S.Yugo, H.Isshiki, and Tadamasa Kimura: "Optical activation of erbium doped porous silicon by hydrogen plasma treatment" Proceedings of the MRS '97 Fall Meeting (Decmber 1-5,1997, Boston, MA) : Materials and Devices for Silicon-Based Op

T.Dejima、R.Saito、S.Yugo、H.Isshiki 和 Tadamasa Kimura：“通过氢等离子体处理对掺铒多孔硅进行光学活化” MRS 97 秋季会议记录（1997 年 12 月 1 日至 5 日，波士顿