Study on The Emission Mechanism of Rare Earth Ions in Semiconductors and Its Application

半导体中稀土离子发射机理及其应用研究

• 批准号: 01550240
• 负责人: KIMURA Tadamasa
• 金额: $ 1.73万
• 依托单位: The University of Electro-Communications
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550240/
• 关键词: Rare Earth Atoms; Erbium; 4F Intrashell Electronic Transition Emission; Electron Impact Excitation; Energy Transfer Efficiency; Fluorescence Efficiency; エレクトロルミネッセンス(EL); フォトルミネッセンス(PL); 光デバイス; イオン注入法; IIIーV族半導体; 4f内殻遷移発光

The most important result that was found during this three year research done with a help of Grant-in-aid for Scientific Research is that we succeeded for the first time in observing the 1.54mum emission due to the 4f intrashell transition of Er^<3+> ions ( ^4I_<13/2>-> ^4I_<15/2>) which are doped in InP by ion implantation by means of a new excitation method, that is, electron impact excitation. Study on the emission of rare earth ions doped in III-V compound semiconductors and in Si semiconductor had been mostly carried out using the energy transfer mechanism from the recombination of electrons and holes which were generated by illumination (photoluminescence) or injected into a pn junction (LED). The problem was a low emission efficiency for lasing, thermal quenching at high temperatures, and little understanding of the precise energy transfer and non-radiative transition mechanisms. We have found that the 1.54 mum emission characteristics of the Er^<3+> ions in InP (spectrum and th … More e temperature dependence of the intensity) were different in essential between photoluminescence and impact excitation. We made a detailed comparison of the emission characteristics between photoluminescence and impact excitation, which made a great contribution to elucidating the emission mechanisms of rare earth ions doped in crystalline semiconductors. The following studies were carried. 1) Er-doping process into InP by means of ion implantation, 2) Impact excitation emission of Er/InP. 3) Analysis of excitation and emission mechanisms of Er ions, 4) Evaluation of emission efficiency and impact cross section.In conclusion, there are various Er3^+ emission centers in InP, and different centers are excited between photoluminescnce and impact excitation. the non-radiative transition mechanism is also different for different centers. We are planning to study further on the emission mechanism, improve the emission efficiency and challenge the impact excitation emission of other rare earth ions in other semiconductors (especially in Si). Less

这一年中最重要的研究是在科学的赠款的帮助下，我们成功地观察了1.54mum的发射。 （ ^4i_ <13/2> - ^4i_ <15/2>）是由新的兴奋方法的离子INP INP INP，电子冲击力量已在IIII-V复合物中掺杂的稀土离子。大多是使用重组的thrangy转移机制进行的。对精确转移AD过渡机制的了解很少。在晶体上掺杂的稀土离子的光致发光和造成的发射机制之间的发射特征。截面。在不同的中心，光粉激发和撞击激发之间也有所不同（特别是在SI中）

项目成果

T. Kimura, H. Isshiki, R. Saito, S. Yugo, and T. Ikoma: ""Impact Excitation Electroluminescence Spectra of Er ions in InP and the possibility of an efficient EL diode at 1.54mum"" Proceedings 1991 International Semiconductor Device Research Symposium, Cha

T. Kimura、H. Isshiki、R. Saito、S. Yugo 和 T. Ikoma：“InP 中 Er 离子的冲击激发电致发光光谱以及 1.54mum 高效 EL 二极管的可能性”1991 年国际半导体器件论文集

H.Isshiki: "Characteristics of the Electroluminescence and photoluminescence Emissions of Erbium Ions Doped in InP and the Energy Transfer Mechanism" Journal of Applied Physics. 70. 6993-6998 (1991)

H.Isshiki：“InP掺杂铒离子的电致发光和光致发光特性及能量传递机制”应用物理学杂志。

H.Isshiki,H.Kobayashi,S.Yugo,T.Kimura and T.Ikoma: "Impact excitation of the Erbiumーrelated 1.54μm luminescence peak in Erbiumーdoped InP" Appl.Phys.Lett.58. 484 (1991)

H.Isshiki、H.Kobayashi、S.Yugo、T.Kimura 和 T.Ikoma：“掺铒 InP 中与铒相关的 1.54μm 发光峰的冲击激发”Appl.Phys.Lett.58（1991）。

H.Isshiki: "Emissions of the 1.54μm Erirelated peaks by impact excitation of Er atoms in IuP and its characteristico" Physical concepts of Materials for Novel Optoelectronics Device Applicatiens 1:Matenials Growth and characterigation. 1361. 223-227 (1990

H.Isshiki：“IuP 中 Er 原子的冲击激发产生的 1.54μm Eri 相关峰的发射及其特征”用于新型光电子器件应用的材料的物理概念 1：材料生长和表征（1990 年）。

H.Isshiki: "Impact excitation of erbium-related 1.54 μm luminescence peak in erbium-doped InP" Applied Physico Letters. 58. 484-486 (1991)

H.Isshiki：“掺铒 InP 中与铒相关的 1.54 μm 发光峰的冲击激发”《应用物理学快报》58. 484-486 (1991)。