Fabrication of Infrared Light Emitting Diodes on Er-doped Si Substrates

掺铒硅衬底上红外发光二极管的制备

基本信息

批准号：
12555088
负责人：
NAKASHIMA Kenshiro
金额：
$ 8.64万
依托单位：
Nagoya Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555088/
关键词：
erbium oxygen ion co-implantation solid phase epitaxial crystallization luminescence decay lifetime photoluminescence SIMS MBE 広がり抵抗 ESRセンター

项目摘要

(1) Results in 2000The amorphized layers induced with co-implantation of Er and 0 (maximum concentration; 1x10^<19>cm^<-3>) in Si are recrystallized from both sides of the interface between the substrate or the surface crystalline layer and the amorphized layer. Er begins to segregate form the both sides during the solid phase epitaxy (SPE), and forms a concentration peak near the surface. 0 moves with Er at the beginning of the SPE, and has the same concentration profile, resulting in the formation of Er-0 optical centers with a cubic symmetry. The luminescence intensity is 2 to 3 times larger in (111)Si than (100)Si.(2) Results in 2001(a) The luminescence lifetime of the 1.537μm main luminescence line from the Er-optical centers with a cubic symmetry was measured at 4.2K-100K with a wavelength resolution of 1.4nm. The energy transfer time τ_T from electron-hole pairs to Er-centers was experimentally confirmed to be about 1 ns by removing the effect of background signals, which agrees … More with the value estimated earlier. Although τ_T is slightly dependent on the temperature in the range examined, more investigations are necessary for stimulated discussion.(b) Er is successfully doped without segregation by laser annealing in amorphized Si co-implanted with Er and 0 with a maximum concentration of 1x10^<19> cm^<-3>. A KrF excimer laser (0.4-0.6J/cm^2, 10-100 pulses) was used for annealing. Luminescence was not obtained in as-annealed samples, and thermal annealing at 900 °C is necessary for optical activation of Er-centers. This results shows that the interaction between Er and 0 is incomplete during the fast laser-annealing period.c A device structure of p-Si/Er-doped n-Si/n-Si was fabricated with a MBE technique. The CAICISS observations show that the p-type layer was grown epitaxially on the Er-doped n-Si layer. A rectifying I-V property shows a threshold voltage 0.4 V in the forward current direction, but this device structure is not successful for electro-luminescence due to inadequate junction structure. A fundamental device process was established in these investigations. Less

(1) 2000年的结果Si中同时注入Er和0(最大浓度1x10^<19>cm^<-3>)诱导的非晶化层从衬底或表面结晶之间的界面两侧再结晶在固相外延（SPE）过程中，Er 层和非晶化层开始从两侧偏析，并在表面附近形成随Er 移动的浓度峰。 (111)Si 的发光强度是 (100)Si 的 2 至 3 倍。(2) 2001年的结果(a)在4.2K-100K范围内测量了来自立方对称Er光中心的1.537μm主发光线的发光寿命，波长分辨率为1.4nm。通过消除背景信号的影响，实验证实从电子空穴对到 Er 中心的能量转移时间 τ_T 约为 1 ns，这与之前估计的值一致，尽管 τ_T 略有依赖。 (b) 通过激光退火，在与 Er 和 0 共注入的非晶硅中成功掺杂了 Er，且没有偏析，最大浓度为1x10^19cm^-3>用于退火的KrF准分子激光器(0.4-0.6J/cm^2，10-100个脉冲)，并且在300℃下热退火。 Er 中心的光学激活需要 900 °C。该结果表明，在快速激光退火期间，Er 和 0 之间的相互作用不完全。采用 MBE 技术制造 p-Si/Er 掺杂 n-Si/n-Si 器件结构 CAICISS 观察结果表明 p 型层是在 Er 掺杂 n-Si 整流 I-V 层上外延生长的。属性显示正向电流方向的阈值电压为 0.4 V，但由于结结构不充分，该器件结构在电致发光方面并不成功。在这些研究中建立了基本的器件工艺。