Survey for rare earth doped chalcogenide glasses with high intensity of luminescence.
高发光强度稀土掺杂硫系玻璃的研究
基本信息
- 批准号:15560301
- 负责人:
- 金额:$ 2.11万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2003
- 资助国家:日本
- 起止时间:2003 至 2005
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Chalcogenide glasses have useful properties such as low phonon energies, high refractive index, and high transmittance in the infrared. Erbium (Er^<3+>) doped chalcogenide glasses are important candidates for active optical wave guide applications at around 1550nm. We investigated Er^<3+> doped chalcogenide glasses. Bulk samples were prepared using Ge (5N), Se (5N), Ga (5N), and Er_2S_3 (3N) by melt quenching technique by quenching from 1000 ℃ to water. We evaluated the solubility of Er according to optical transmission at 1450nm and efficiency of absorption for Er^<3+>. The glasses allowed to solute 1at.% of Er over the all glass forming region except for low (<3at.%) Ga concentration. On the tie-line of stoichiometry between GeSe_2 and Ga_2Se_3 the solubility of Er is best as about 4 at.% of Er. The photoluminescence (PL) was excited from a laser operating at a wavelength of 980 nm. The maximum intensity of PL was observed on the tie-line at 10-14at.% of Ga. We found that PL intensity increased proportionally with Er^<3+> concentration up to 2 at.% and than it is constant or decreases above this concentration. Consequently Er^<3+> ions seem to be well dispersed and optically active up to Er concentration of about 2 at.% in these glass matrices. The glass matrix of Er^<3+> doped glasses becomes inhomogeneous above 18.at.% of Ga content. As this behaviour was observed only for Er-doped glasses, the presence of Er^<3+> ions seem to aid glass matrix destabilization (phase separation, or crystallization). The effect of thermal annealing and substitution of Se to Te were observed. The PL intensity increased to 50%-100% without the change of PL spectra. Er^<3+> ions would stay near the covalent bond of -Se^<-δ>-Ga^<+δ>- because the difference in the electronegativity of both atoms caused the ionic bonding between Se and Ga. Then Er^<3+> ion attracted to some number of Se atoms.
葡萄干剂玻璃具有有用的特性,例如低声子能量,高折射率和红外线的高传输。 Erbium(ER^<3+>)掺杂的硫族化合物玻璃是在1550nm左右的主动光波指南应用的重要候选者。我们研究了Er^<3+>掺杂的硫族化合物玻璃。使用GE(5N),SE(5N),GA(5N)和ER_2S_3(3N)通过熔融淬火技术从1000℃到水来制备散装样品。我们根据1450nm的光学传输以及ER^<3+>的痛苦效率评估了ER的溶液。除低(<3at。%)GA浓度外,允许在所有玻璃形成区域上可溶1AT的ER的玻璃。在GESE_2和GA_2SE_3之间的化学计量平局上,ER的解决方案最好约为ER的4%。光效率(PL)是从在980 nm波长下工作的激光激发的。在ga的10-14AT上观察到PL的最大强度。我们发现,PL强度随着ER^<3+>浓度成比例增加,最高为2 at。%,并且比恒定或降低了该浓度。因此,在这些玻璃矩阵中,Er^<3+>离子似乎很好地分散,并且光学活性高达约2%。 Er^<3+>掺杂玻璃的玻璃基质在18. ga含量的18.%以上变得不均匀。由于仅观察到这种行为,因此ER^<3+>离子的存在似乎有助于玻璃基质不稳定(相位分离或结晶)。观察到热退火和将SE取代为TE的影响。 PL强度在没有PL光谱的情况下增加到50%-100%。 Er^<3+>离子将保持在-se^<-Δ> -ga^<+δ>的共价键附近,因为这两个原子的电负性差异导致Se和Ga之间的离子键。然后Er^<3+>离子吸引了某些SE原子。
项目成果
期刊论文数量(38)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
THERMAL AND OPTICAL ANALYSIS OF Ge-Ga-Se CHALCOGENIDE GLASSES
Ge-Ga-Se硫属化物玻璃的热光学分析
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:M.Munzar
- 通讯作者:M.Munzar
Influence of Ga on the optical and thermal properties of Er_2S_3 doped stoichiometric and nonstoichiometric Ge-Ga-Se glasses.
Ga对Er_2S_3掺杂化学计量和非化学计量Ge-Ga-Se玻璃光学和热性能的影响
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:M.Munzar;M.Munzar;K.Maeda;M.Munzar;K.Maeda;M.Munzar
- 通讯作者:M.Munzar
Effect of three stage isothermal annealing on nucleation process in GeSe_2 glasses
三阶段等温退火对GeSe_2玻璃成核过程的影响
- DOI:
- 发表时间:2003
- 期刊:
- 影响因子:0
- 作者:M.Munzar;M.Munzar;K.Maeda;M.Munzar;K.Maeda;M.Munzar;K.Maeda;K.Maeda;M.Munzar;K.Sakai;K.Maeda
- 通讯作者:K.Maeda
EFFECT OF THERMAL ANNEALING ON THE PHOTOLUMINESCENCE OF Er DOPED Ge-Se-Ga GLASSES.
热退火对掺铒 Ge-Se-Ga 玻璃光致发光的影响。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:M.Munzar;M.Munzar;K.Maeda;M.Munzar;K.Maeda;M.Munzar;K.Maeda;K.Maeda;M.Munzar;K.Sakai;K.Maeda;K.Sakai;K.Maeda;T.Sakai;K.Maeda;T.Sakai;K.Maeda
- 通讯作者:K.Maeda
The influence of Te on thermal properties of Er-doped(Ge_<30>(Se_<1-x>Te_x)_<70>)_<94>Ga_6 chalcogenide glasses.
Te对Er掺杂(Ge_<30>(Se_<1-x>Te_x)_<70>)_<94>Ga_6硫系玻璃热性能的影响。
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:M.Munzar;M.Munzar;K.Maeda;M.Munzar;K.Maeda;M.Munzar;K.Maeda
- 通讯作者:K.Maeda
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MAEDA Kouji其他文献
MAEDA Kouji的其他文献
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{{ truncateString('MAEDA Kouji', 18)}}的其他基金
Fundamental Study for New Crystal Capsule Formed by Using Nucleation of mutual anti-solvent crystallization
互反溶剂结晶成核形成新型晶囊的基础研究
- 批准号:
21560782 - 财政年份:2009
- 资助金额:
$ 2.11万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of new crystallization and its splay-dry micro unit to generate nano-meter size crystals
开发新的结晶及其喷雾干燥微单元以产生纳米尺寸的晶体
- 批准号:
17560665 - 财政年份:2005
- 资助金额:
$ 2.11万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of sensitive detection of crystalline defects in wide gap semiconductor by Raman scattering measurements
通过拉曼散射测量开发宽带隙半导体晶体缺陷的灵敏检测
- 批准号:
12650017 - 财政年份:2000
- 资助金额:
$ 2.11万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
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