Mesoscopic Devices Using InAs Heterostructures and Their Applications

InAs异质结构介观器件及其应用

基本信息

批准号：
06452223
负责人：
YOH Kanji
金额：
$ 4.74万
依托单位：
Hokkaido University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06452223/
关键词：
Indium Arsenide mesoscopic device quantum well quantum wire quantum dot charging effect quantized conductance

项目摘要

With the advent of microelectronics, the device size and its physical phenomena have reached to the mesoscopic region. There have been strong effort on mesoscopic physics and device applications mostly based on GaAs operated at cryogenic temperatures. We have investigated mesoscopic devices based on InAs heterostructures in order to realize quantum effect devices operated at higher temperatures. First of all, we have investigated fabrication method of quantunm dot structures for the purpose of device applications. Strained InAs heterostructure was shown to inherit inhomogeneous strain distribution which strongly affects its energyband inhomogeniety. Self-assembled InAs dots were shown to distribute regularly on patterned GaAs substrates. Secondly, we have succeeded in fabricating split-gate HEMT structure with InAs dots and observed single electron charging of the dot at up to 40K.We have also succeeded in fabricating InAs wuantum wires and observed quantized conductance at 80K.Thirdly, high performance InAs channel FETs have been fabricated by Platinum gate structure and P' gate structure based on InP.We have successfully applied InAs channel FET structure to superconducting weak links and obtaind IcRn product of 2meV.Finally, InAs heterostructures were also applied to resonat tunneling structures : energy spectra of ballistic electrons were measued by using InAs/AlSb RTD and up to seven phonon replicas were observed at 77K.RTD with InAs well and InGaAs pre-well has been shown to have almost doubled peak current. GaAs/AlGaAs RTD with InAs dots buried in cathode GaAs adjacent to the barrier has been shown to have memory effect due to the charging of InAs dots and charged electrons were shown to be dischraged by resonant tunneling. The clear hysteresis were observed at room temperature.

随着微电子的出现，设备的大小及其物理现象已经到达介观区。主要基于在低温温度下运行的GAA，在介观物理和设备应用方面进行了巨大的努力。我们已经根据INAS异质结构研究了介观设备，以实现在较高温度下操作的量子效应设备。首先，我们研究了定量点结构的制造方法，目的是为了设备应用。表现出紧张的INAS异质结构遗传了不均匀的应变分布，从而强烈影响其能带非核心。显示自组装的INAS点可定期在图案化的GAAS底物上分布。其次，我们成功地用INAS点制造了分裂的Hemt结构，并观察到该点的单电子充电可达40K，我们还成功地制造了iNas wuantum电线，并在80k处观察到了80k的量化电导，三分之二的是，高性能INAS的较高性能INAS基于Platinum Gate的结构和P'闸门结构，并成功地基于Platinum Gate的结构和P'otter ftel。从本文中，INAS异质结构也用于共振隧道结构：通过使用INAS/ALSB RTD测量弹道电子的能量光谱，并且在77k.rtd中观察到弹道电子的能量光谱，并在77k.rtd中观察到了Inas Well和Ingaas PreWell pree Pemep的77k.rtd。 GAAS/ALGAAS RTD带有埋在障碍物附近的阴极GAA中的INAS点的GAAS/ALGAA RTD已显示出记忆效应，这是由于INAS点的充电和带电的电子被证明被共振隧道脱离。在室温下观察到明显的滞后。