Fabrication of Quantum Wires Based on Selective Doping Mechanism and Its Application to Functional Devices Using Quantum Parallelism

基于选择性掺杂机制的量子线制备及其在量子并行功能器件中的应用

基本信息

批准号：
10450110
负责人：
YOH Kanji
金额：
$ 7.81万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

We have aimed at establishing our original fabrication methods of quantum wires and further developing the method to apply to the realization of the "quantum devices". We have investigated the fabrication and the electronic characterization of the quantum wires grown on facets on (311)A GaAs substrates in addition to the (100) GaAs substrates. Cryogenic temperature measurement on quantum wire transistors showed clear quantum wire characteristics. The major results are described below. (I) We have established a new fabrication methods of device quality quantum wires based on selective doping mechanism on patterned sustrates. Unlike the advanced nano-lithography technique such as electron beam lithography or scanning probe method, the present method was demonstrated to be able to process wafer scale fine structures in one step of growth. The obtained quantum wires were shown to maintain high quality along mm long structurally by Electrostatic Force Microscopy. (ii) Single electron oscill … More tion was observed near pinch-off conditions at 2K. Detailed measurements changing temperature and the external magnetic fields relealed that the potential ondulation along the quantum wire resulted in series of isolated potential pockets of 6meV or so deep. Present results shows degree of flatness of the confinement potential along the mm long quantum wires based on the present method. In addition, we have observed clear conductance oscillations which are clear evidence of 1-dimensional conduction at 77K and 4K. This result strongly indicates that one-dimensional conduction is achieved at up to 77K or more without mode mixing. (iii) Transistor characteristics of the "single wire" transistor were also investigated. The I .5μm gate transistor showed the transconductance of 580mS/mm and 650mS/mm at 300K and 77K respectively. These results belong to high end of the modulation doped transistors based on GaAs/AlGaAs. This result indicates successful fabrication of high quality one-dimensional electron systems. It also revealed extremely small gate leakage current of the order of tens of picoamperes. Together with this low leakage characteristics, the present quantum wire approach was shown to have high potentail of integrated quantum qire transistor circuits based on classical and quantum funcional principles. Less

我们旨在建立我们的原始制造方法的量子线方法，并进一步开发用于实现“量子设备”的方法。我们已经研究了（311）A GAAS底物在（100）GAAS底物上的（311）a aas基板上生长的量子线的制造和电子表征。量子晶体管上的低温温度测量显示清晰的量子线特性。主要结果（i）我们基于在图案化产品上的选择性掺杂机制建立了一种新的制造方法，用于设备质量量子线。与先进的纳米光刻技术（例如电子束光刻或扫描探针方法）不同，目前的方法被证明能够在生长的一个步骤中处理晶圆刻度尺度。获得的量子线显示可通过静电力显微镜在结构上沿MM长。（ii）在2K处观察到的单个电子振荡……在捏合条件附近观察到更多。详细的测量变化温度和外部磁场表明，沿量子线的电势符号导致一系列6mev或如此深的隔离电势袋。目前的结果表明，基于当前方法，沿MM长量子线沿MM长量子线的平坦程度。此外，我们已经观察到明确的电导振荡，这是77K和4K时1维传导的明确证据。该结果强烈表明，在没有模式混合的情况下，最多可以达到77K或更多的一维传导。（iii）还研究了“单线”晶体管的晶体管特征。 I.5μm栅极晶体管在300K和77K时分别显示出580ms/mm和650ms/mm的跨导率。结果属于基于GAAS/藻类的调制掺杂晶体管的高端。该结果表明成功制造了高质量的一维电子系统。它还揭示了数十个picoAmperes的阶数的极小闸门泄漏电流。与这种较低的泄漏特性一起，目前的量子导线被证明具有基于经典和量子函数原理的综合量子QIRE晶体管电路的高电力。较少的